Patent classifications
G01R33/1284
Ultra high-sensitivity micro magnetic sensor
A magnetic sensor, comprising: a substrate having a groove; two conductive magnetic wires for magnetic field detection arranged adjacent and substantially parallel to one another and at least partially recessed in the groove on the substrate, the two conductive magnetic wires electrically coupled at one end; a coil surrounding the two magnetic wires; two electrodes coupled to the two conductive magnetic wires for wire energization; and two electrodes coupled to the coil for coil voltage detection.
Semiconductor element, magnetoresistance effect element, magnetic sensor and spin transistor
A semiconductor element includes a semiconductor layer, a first electrode and a second electrode. The first electrode and the second electrode are separated from each other on the semiconductor layer. The semiconductor layer has a first semiconductor region and a second semiconductor region. The first electrode and the second electrode are provided on the first semiconductor region. The second semiconductor region is separated from the first electrode and the second electrode. The second semiconductor region is provided to be in contact with at least a part of an end surface of the first semiconductor region. The first semiconductor region has n-type/p-type conductivity. The second semiconductor region has p-type/n-type conductivity.
SPIN-BASED DETECTION OF TERAHERTZ AND SUB-TERAHERTZ ELECTROMAGNETIC RADIATION
Systems and methods for spin-based detection of electromagnetic radiation at terahertz and sub-terahertz frequencies is provided. The detector can include a heterostructure, a magnetic field generator, and an electrical circuit. The heterostructure can include a first layer formed of an antiferromagnetic material (AFM) in contact with a second layer of a heavy metal (HM) or a topological insulator. The magnetic field generator can generate a magnetic field oriented approximately parallel to an easy axis of the first layer and approximately parallel to a propagation direction of electromagnetic radiation. The circuit can be in electrical communication with the second layer. The first layer can inject a spin current into the second layer in response to receipt of electromagnetic radiation having a sub-terahertz or terahertz frequency. The second layer can convert the injected spin current into a potential difference. The circuit can be configured to output a signal corresponding to the potential difference.
System and method for performing scanning tunneling microscopy on current-carrying samples
A scanning tunneling microscopy based potentiometry system and method for the measurements of the local surface electric potential is presented. A voltage compensation circuit based on this potentiometry system and method is developed and employed to maintain a desired tunneling voltage independent of the bias current flow through the film. The application of this potentiometry system and method to the local sensing of the spin Hall effect is outlined herein, along with the experimental results obtained.
System and method for cryogenic hybrid technology computing and memory
A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.
Elastic cosmetic masks and methods for treating skin
The instant disclosure relates to masks, methods for making masks, methods for improving film elasticity of masks, and to methods of treating skin with masks. The masks are formed by applying a mask base composition onto a surface, the mask base composition comprising: (i) alginic acid and/or a salt thereof; (ii) hectorite (lithium magnesium sodium silicate); (iii) one or more water-soluble solvents; and (iv) water; and exposing the mask base composition to a crosslinking composition for a time sufficient to crosslink the alginic acid and/or a salt thereof and form a final mask, the crosslinking composition being an aqueous liquid comprising (i) one or more polyvalent cations of one or more metals; and (ii) water. The instant disclosure further relates to masks formed by the disclosed methods and to kits comprising the compositions for making and/or using the masks.
High-frequency magnetic field generating device
A high-frequency magnetic field generating device includes two coils arranged with a predetermined gap in parallel with each other, the two coils (a) in between which electron spin resonance material is arranged or (b) arranged at one side from electron spin resonance material; a high-frequency power supply that generates microwave current that flows in the two coils; and a transmission line part connected to the two coils, that sets a current distribution so as to locate the two coils at positions other than a node of a stationary wave.
Integrated mounting solution for solid-state spin sensors used for bulk detection and imaging
Solid-state spin sensor systems and methods of manufacturing are disclosed. A mounting structure may be provided in thermal contact with a solid-state spin sensor having a plurality of color center defects such that thermal energy flows from the solid-state spin sensor to the mounting structure. A microwave application structure may be disposed on a face of the mounting structure or a face of the solid-state spin sensor for applying microwave radiation to the solid-state spin sensor.
Microwave resonator readout of an ensemble solid state spin sensor
Microwave resonator readout of the cavity-spin interaction between a spin defect center ensemble and a microwave resonator yields fidelities that are orders of magnitude higher than is possible with optical readouts. In microwave resonator readout, microwave photons probe a microwave resonator coupled to a spin defect center ensemble subjected to a physical parameter to be measured. The physical parameter shifts the spin defect centers' resonances, which in turn change the dispersion and/or absorption of the microwave resonator. The microwave photons probe these dispersion and/or absorption changes, yielding a measurement with higher visibility, lower shot noise, better sensitivity, and higher signal-to-noise ratio than a comparable fluorescence measurement. In addition, microwave resonator readout enables coherent averaging of spin defect center ensembles and is compatible with spin systems other than nitrogen vacancies in diamond.
SENSOR WITH MAGNETIC SHIELD
A magnetic sensor is disclosed. The magnetic sensor can include a sensing element and a magnetic shield. The sensing element and the magnetic shield can be vertically stacked with one another. The magnetic shield can be a magnetic shield plate that includes ferromagnetic portions spaced laterally by a non-ferromagnetic material. The sensing element can have a first side and a second side opposite the first side. The magnetic shield that can be vertically stacked over the first side of the sensing element. The magnetic shield can be spaced apart from the sensing element by an isolation layer. A passivation layer can cover at least a portion of the sensing element or the magnetic shield. The sensing element can be configured to sense a magnetic field property of a magnetic field source that is positioned on the second side of the sensing element.