A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.

The present invention relates, in general terms, to magnetoresistance sensors and methods of fabrication thereof. The magnetoresistance sensor comprises a continuous graphene layer disposed on a corrugated and/or stepped surface of a substrate. At least two conductive elements are in contact with the graphene layer. The graphene layer substantially conforms to the corrugated and/or stepped surface of the substrate.

The present disclosure provides a method of monitoring the magnetic field in which a magnetic sensor is operating in to ensure that the sensor is operating within its defined magnetic window. For example, the method uses the sensor output of either a multi-turn sensor, or some other magnetoresistive sensor that is being used in conjunction with the multi-turn sensor, for example, a magnetic single turn sensor or a second multi-turn sensor, to monitor the operating magnetic field.

The present disclosure provides magnetic sensor system that includes a magnetic sensing device comprising a magnetic multi-turn sensor, and an initialization device for setting the magnetic multi-turn sensor in a known state ready for use. The initialization device is in the form of a substrate, such as a printed circuit board, comprising one or more wires. A strong electrical pulse is applied to the one or more wires, which thereby generate a magnetic field that is strong enough to cause the magnetoresistive elements of the magnetic multi-turn sensor to be filled with domain walls, thereby magnetising each element into an initialized state.

To provide a magnetic domain image processing apparatus and a magnetic domain image processing method by which strain of an electromagnetic steel sheet can be evaluated in more detail. The invention is a magnetic domain image processing apparatus that processes a magnetic domain image, and the magnetic domain image processing apparatus includes: an image acquisition unit configured to acquire a reference magnetic domain image and a positive magnetic domain image or acquire the reference magnetic domain image and a negative magnetic domain image, the reference magnetic domain image being a magnetic domain image that is obtained when a stimulus of a reference intensity that is an intensity serving as a reference is applied to a sample, the positive magnetic domain image being a magnetic domain image that is obtained when the stimulus of an intensity higher than the reference intensity is applied to the sample, and the negative magnetic domain image being a magnetic domain image that is obtained when the stimulus of an intensity lower than the reference intensity is applied to the sample; and an image generation unit configured to generate, based on the reference magnetic domain image and the positive magnetic domain image, or based on the reference magnetic domain image and the negative magnetic domain image, a stress distribution image indicating a distribution of a stress region that is a region where stress is generated.

Sub-diffraction limited magneto-optical microscopy, such as Kerr or Faraday effect microscopy, provide many advantages to fields of science and technology for measuring, or imaging, the magnetization structures and magnetization domains of materials. Disclosed is a method and system for performing sub-diffraction limited magneto-optic microscopy. The method includes positioning a microlens or microlens layer relative to a surface of a sample to image the surface of the sample, forming a photonic nanojet to probe the surface of the sample, and receiving light reflected by the surface of the sample or transmitted through the sample at an imaging sensor. The methods and associated systems and devices enable sub-diffraction limited imaging of magnetic domains at resolutions 2 to 8 times the classical diffraction limit.

Provided is a method of measuring a magnitude of magnetization of a perpendicular magnetic thin film, including: forming a stripe pattern in which a first magnetic domain that extends in a y direction and is magnetized in a z direction and a second magnetic domain that extends in the y direction and is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane; changing widths in the x direction, of the first and second magnetic domains by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; and calculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain.

The present disclosure provides a method of monitoring the magnetic field in which a magnetic sensor is operating in to ensure that the sensor is operating within its defined magnetic window. For example, the method uses the sensor output of either a multi-turn sensor, or some other magnetoresistive sensor that is being used in conjunction with the multi-turn sensor, for example, a magnetic single turn sensor or a second multi-turn sensor, to monitor the operating magnetic field.

A giant magnetoresistance (GMR) element is provided for use in a magnetic multi-turn sensor in which the free layer, that is, the layer that changes its magnetization direction in response to an external magnetic field so as to provide a resistance change, is thick enough to provide good shape anisotropy without exhibiting an AMR effect. To achieve this, at least a portion of the free layer comprises a plurality of layers of at least two different materials, specifically, a plurality of layers of at least a first material that is ferromagnetic and a plurality of layers of at least a second material that is known not to exhibit an AMR effect and that does not interfere with the GMR effect of the layers of ferromagnetic material.

A spin element includes an element portion including a first ferromagnetic layer, a conducting portion that extends in a first direction as viewed in a lamination direction of the first ferromagnetic layer and faces the first ferromagnetic layer, and a current path extending from the conducting portion to a semiconductor circuit and having a resistance adjusting portion between the conducting portion and the semiconductor circuit, wherein the resistance value of the resistance adjusting portion is higher than the resistance value of the conducting portion, and the temperature coefficient of the volume resistivity of a material forming the resistance adjusting portion is lower than the temperature coefficient of the volume resistivity of a material forming the conducting portion.