The magnetometers possess detector part with a magnetic wire sensitive to magnetic field consisting of a domain structure of the surface domain with circular spin alignment and core domain with longitudinal spin alignment and micro coil surrounding its magnetic wire to pick up the change of longitudinal magnetizing caused by spin rotation in surface domain with circular spin alignment called as GSR effect excited by pulse with frequency of 0.5 GHz to 4 GHz. Peak coil voltage is detected by a circuit characterized with pulse generator, GSR element, Buffer circuit, sample holding circuit, amplifier circuit and means to invert it to external magnetic field. The induced coil voltage caused by parasitic coil capacitance and wiring loop is vanished by combination coil of right and left turn coil. The magnetometers can provide lower noise, wide measuring range with a small size detector part and is applied to smartphones, wearable computer and so on.

Magnetoelectronic components comprise at least one oblong working structure made of a ferromagnetic material, along which magnetic domain walls can migrate, means for applying an electric current to this working structure, and at least one magnetic field sensor for the magnetic field generated by the working structure. The working structure is designed so that it is able to form domain walls, the transverse magnetization direction of which in the center has no preferred direction in the plane perpendicular to the migration direction thereof along the working structure, and/or can form massless domain walls. It was found that the kinetic energy of such moving domain walls vanishes. These walls are thus not subject to the Walker limit nor to intrinsic pinning. As a result, the components can read, store or process and finally output information more quickly. The invention also relates to a method for measuring the non-adiabatic spin transfer parameter of a ferromagnetic material. This method was developed as part of a more in-depth examination of the phenomena that were found.

Aspects of the present disclosure provide a magnetoresistive track for use in a magnetic multi-turn sensor, the magnetoresistive track comprising one or more looped sections. The looped sections can include a crossing where the magnetoresistive track crosses itself at substantially 90 degrees. In some cases, the looped portions may be further provided with syphon structures to prevent domain walls propagating around the magnetoresistive track as an external magnetic field rotates from becoming stuck at the crossing or propagating in the wrong direction at the crossing.

Position sensing units, comprising a magnetic assembly (MA) having a width W measured along a first direction and a height H measured along a second direction and including at least three magnets having respective magnetic polarizations that define along the first direction at least a left MA domain, a middle MA domain and a right MA domain, wherein the magnetic polarizations of each MA domain are different, and a magnetic flux measuring device (MFMD) for measuring a magnetic flux B, wherein the MA moves relative to the MFMD along the first direction within a stroke L that fulfils 1 mmL100 mm, stroke L beginning at a first point x.sub.0 and ending at a final point x.sub.max, and wherein a minimum value D.sub.min of an orthogonal distance D, measured along the second direction between a particular MA domain and the MFMD, fulfills L/D.sub.min>10.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer. The nonmagnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy layer. The nonmagnetic layer includes a first region and a second region in a plane. Both of the first region and the second region are formed of a metal. The second region is different in constituent material from the first region. The second region has a crystal structure of a body-centered cubic lattice structure (bcc).

The present disclosure provides a magnetoresistive quadrant detector for use in a magnetic sensing device comprising a magnetic multi-turn sensor and an angle turn sensor, in particular, an angle sensor configured to provide 180 absolute angle measurements, such as an anisotropic magnetoresistive (AMR) angle sensor. The quadrant detector is formed of at least two magnetoresistive elements, preferably giant magnetoresistive (GMR) elements, which may be integrated to the multi-turn sensor die or provided on a separate die within the sensor package. The magnetoresistive elements are configured to provide a unique combination of resistance states for each quadrant of magnetic field direction. This quadrant information can then be used to remedy any ambiguities in the multi-turn measurement without needing 360 absolute angle information from the single turn angle sensor.