A transducer includes a composite waveguide including a composite wire having an internal core of low electrical resistance material and an outer layer of magnetostrictive material.

A transducer includes a composite waveguide including a composite wire having an internal core of low electrical resistance material and an outer layer of magnetostrictive material.

The disclosed technology generally relates to semiconductor devices, and more particularly to a device configured as one or both of a spin wave generator or a spin wave detector. In one aspect, the device includes a magnetostrictive film and a deformation film physically connected to the magnetorestrictive film. The device also includes an acoustic isolation surrounding the magnetostrictive film and the deformation film to form an acoustic resonator. When the device is configured as the spin wave generator, the deformation film is configured to undergo a change physical dimensions in response to an actuation, where the change in the physical dimensions of the deformation film induces a mechanical stress in the magnetostrictive film to cause a change in the magnetization of the magnetostrictive film. When the device is configured as the spin wave detector, the magnetostrictive film is configured to undergo to a change in physical dimensions in response to a change in magnetization, wherein the change in the physical dimensions of the magnetostrictive film induces a mechanical stress in the deformation film to cause generation of electrical power by the deformation film.

The disclosed technology generally relates to semiconductor devices, and more particularly to a device configured as one or both of a spin wave generator or a spin wave detector. In one aspect, the device includes a magnetostrictive film and a deformation film physically connected to the magnetorestrictive film. The device also includes an acoustic isolation surrounding the magnetostrictive film and the deformation film to form an acoustic resonator. When the device is configured as the spin wave generator, the deformation film is configured to undergo a change physical dimensions in response to an actuation, where the change in the physical dimensions of the deformation film induces a mechanical stress in the magnetostrictive film to cause a change in the magnetization of the magnetostrictive film. When the device is configured as the spin wave detector, the magnetostrictive film is configured to undergo to a change in physical dimensions in response to a change in magnetization, wherein the change in the physical dimensions of the magnetostrictive film induces a mechanical stress in the deformation film to cause generation of electrical power by the deformation film.

A magnetoelastic shear force transducer with an interference field compensation comprises a hollow component section having an interior recess. A load can be applied onto the hollow component section. The load causes a shear stress in the hollow component section. The hollow component section includes at least one annular magnetoelastically active section having a magnetic polarization surrounding the recess and magnetoelastic properties. Magnetic-field sensors include at least one magnetic-field sensor in the magnetoelastically active section and a magnetic-field compensating sensor associated with the magnetic-field sensor in the magnetoelastically active section. The magnetic-field compensating sensor is arranged outside the magnetoelastically active section. A sensor signal of the magnetic-field sensor is processed along with a compensating signal of the magnetic-field compensating sensor to reduce the influence of an interfering magnetic field. A method of determining an optimum distance between the magnetic-field sensor and an associated magnetic-field compensating sensor is also disclosed.

A magnetoelastic shear force transducer with an interference field compensation comprises a hollow component section having an interior recess. A load can be applied onto the hollow component section. The load causes a shear stress in the hollow component section. The hollow component section includes at least one annular magnetoelastically active section having a magnetic polarization surrounding the recess and magnetoelastic properties. Magnetic-field sensors include at least one magnetic-field sensor in the magnetoelastically active section and a magnetic-field compensating sensor associated with the magnetic-field sensor in the magnetoelastically active section. The magnetic-field compensating sensor is arranged outside the magnetoelastically active section. A sensor signal of the magnetic-field sensor is processed along with a compensating signal of the magnetic-field compensating sensor to reduce the influence of an interfering magnetic field. A method of determining an optimum distance between the magnetic-field sensor and an associated magnetic-field compensating sensor is also disclosed.

A method for aligning a sensor with a conductive material includes inducing a first magnetic flux in the conductive material to generate a first magnetic field state, and receiving a first signal at a first signal output level from a first detector and a second signal at a second signal output level from a second detector at the first magnetic field state. The method also includes inducing a second magnetic flux in the conductive material to generate a second magnetic field state, and receiving a third signal at a third signal output level from the first detector and a fourth signal at a fourth signal output level from the second detector at the second magnetic field state. Moreover, the method includes, based on changes in the signal output levels, adjusting a position of the sensor relative to the conductive target material to adjust the signal output levels to desired levels.

A tape format magnetoelastic resonator device comprises a continuous ribbon of amorphous magnetic material having a plurality of separate, hinged magnetoelastic resonator strips formed from the ribbon, linearly displaced along a longitudinal axis of the ribbon, wherein each magnetoelastic resonator strip is configured to couple to an external magnetic field at a particular frequency and convert the magnetic energy into mechanical energy, in the form of oscillations.

A hydrogen gas sensor utilizing electrically isolated tunneling magnetoresistive stress sensing elements is disclosed. The hydrogen gas sensor comprises: a deformable substrate, a magnetoresistive bridge stress sensor located on the deformable substrate, an electrical isolation layer covering the magnetoresistive bridge stress sensor, a magnetic shielding layer located on the electrical isolation layer, and a hydrogen sensing layer located above the deformable substrate. The hydrogen sensing layer is located in a plane perpendicular to the deformation of the substrate covering the electrical isolation layer. The hydrogen sensing layer is used for absorbing or desorbing hydrogen gas to generate expansion or contraction deformation and cause a stress change of the deformable substrate. The magnetoresistive bridge stress sensor is used for measuring a hydrogen gas concentration utilizing the stress change of the deformable substrate. It results in a hydrogen gas sensor with improved performance.

An optical magnetometer comprising: an optical resonator having a central void; and a magnetostrictive material located in the central void such that a change in dimension of the magnetostrictive material causes a change in mechanical modes of the optical resonator. Also a method of making the optical magnetometer.