A radiography system comprising a radiography device and a power supply device is provided. The radiography device includes a sensor unit for obtaining a radiographic image and is capable of non-contact power reception, and the power supply device is capable of non-contact power supply to the radiography device. In a period in which a fluctuation in a power supply frequency of the power supply from the power supply device to the radiography device affects a signal obtained by the radiography device from the sensor unit, the power supply device supplies power to the radiography device at a constant power supply frequency.

[Problem] Provided is a scintillator panel which is capable of imaging at a low dose while suppressing the contrast deterioration caused by scattered radiation, and further has improved luminance and MTF.

[Solving Means] A scintillator panel having a scintillator layer for converting radiation into light, characterized in that the scintillator layer is in direct contact on a photoelectric conversion element and includes a reflecting layer and a scattered radiation diffusing layer on a radiation incident side of the scintillator layer, the scattered radiation diffusing layer is present closer to the radiation incident side than the reflecting layer, and the scattered radiation diffusing layer has an X-ray transmittance of 99.5% or more.

According to one embodiment, a scintillator includes a first layer provided on a surface of a substrate and including thallium activated cesium iodide; and a second layer provided on the first layer and including thallium activated cesium iodide. The second layer includes crystals having a [100] orientation partially diverted from a direction perpendicular to the surface of the substrate. Half width at half maximum of a frequency distribution curve of an angle between the direction perpendicular to the surface of the substrate and the [001] orientation, which is obtained by measuring the angle using EBSD method, is 2.4 degree or less.

The present invention provides a low-dimensional perovskite-structured metal halide and a preparation method and application thereof. The general formulas of the compositions of the low-dimensional perovskite-structured metal halide are AB.sub.2X.sub.3, A.sub.2BX.sub.3, and A.sub.3B.sub.2X.sub.5; wherein, A is at least one of Li, Na, K, Rb, Cs, In, and Tl; B is at least one of Cu, Ag, and Au; and X is at least one of F, Cl, Br, and I.

A radiation detector includes control and data lines extending respectively in mutually-orthogonal first and second directions, photoelectric conversion parts respectively in regions defined by the control and data lines, noise detecting parts outside a region including the photoelectric conversion parts, a control circuit inputting control signals to first and second thin film transistors located respectively in the photoelectric conversion and noise detecting parts, a signal detection circuit reading image data and noise signals respectively from the photoelectric conversion and noise detecting parts, and an image configuration circuit configuring a radiation image based on the signals that are read. The signals from the photoelectric conversion parts adjacent to the noise detecting parts are not read and/or are not used by the image configuration circuit when configuring the radiation image, and/or the photoelectric conversion parts adjacent to the noise detecting parts are not electrically connected with the control and/or signal detection circuits.

A radiation imaging apparatus includes a scintillator layer configured to convert radiation into light, a supporting base configured to support the scintillator layer, a sensor panel including a plurality of photoelectric conversion elements arranged in a two-dimensional array, and a substrate, and the radiation imaging apparatus includes a sealing portion configured to seal the sensor panel and the scintillator layer in a space formed between the substrate and the supporting base, wherein the supporting base is made of metal, and a main material of the supporting base is same as a main material of the substrate.

Scintillator materials, as well as related systems, and methods of detection using the same, are described herein. The scintillator material composition may comprise a Tl-based scintillator material. For example, the composition may comprise a thallium-based halide. Such materials have been shown to have particularly attractive scintillation properties and may be used in a variety of applications for detection radiation.

The present disclosure provides an X-ray detecting device, and a manufacturing method of an X-ray detecting panel. The present disclosure also provides an X-ray detecting panel including a main bias voltage signal line and a photodiode. A cathode of the photodiode is electrically connected to the main bias voltage signal line. The X-ray detecting panel further includes at least one auxiliary bias voltage signal line electrically connected to the main bias voltage signal line.

The present disclosure provides an X-ray detecting device, and a manufacturing method of an X-ray detecting panel. The present disclosure also provides an X-ray detecting panel including a main bias voltage signal line and a photodiode. A cathode of the photodiode is electrically connected to the main bias voltage signal line. The X-ray detecting panel further includes at least one auxiliary bias voltage signal line electrically connected to the main bias voltage signal line.

Provided is a radiation image detector, including: a substrate; an optical image detector located on the substrate; and a radiation conversion layer located above the optical image detector to convert radiation into visible light. The optical image detector includes a photosensitive pixel array formed by a plurality of photosensitive pixels arranged periodically; each photosensitive pixel includes a photoelectric conversion layer which is capable of converting the visible light into electric charges. The photoelectric conversion layer includes an active region and an inactive region. The active region occupies less than 70% of the area of the photoelectric conversion layer. Each photosensitive pixel further includes a light-guide layer located between the radiation conversion layer and the photoelectric conversion layer and configured to guide the visible light to the active region.