Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB.sub.2X.sub.5, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.

Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB.sub.2X.sub.5, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.

An exemplary embodiment of the present disclosure provides a detector configured to output a signal associated with one or more interactions with subatomic particles. The detector comprises a sensor comprising a first diode comprising first semiconductor material abutting a first metal and forming a first junction, wherein the sensor is configured to be exposed to subatomic particles and a voltage reference member configured to generate a reference measurement. The sensor and the voltage reference member form a bandgap reference circuit. The present disclosure also provides methods for detecting subatomic particles from a solid-state detector comprising a first Schottky diode in electrical communication with a reference voltage member comprising a parallel circuit of two or more second Schottky diodes, wherein the first Schottky diode is configured to be exposed to subatomic particles and the second Schottky diodes of the reference voltage member are configured to generate a reference measurement.

An X-ray detector integral with an automatic exposure control (AEC) device can include an X-ray detection part configured to detect X-rays irradiated from an X-ray source and generate X-ray image data; and an automatic exposure detection board located below the X-ray detection part and configured to generate an X-ray sensing signal for automatic exposure control based on residual X-rays which have passed by or through the X-ray detection part.

An X-ray detector integral with an automatic exposure control (AEC) device can include an X-ray detection part configured to detect X-rays irradiated from an X-ray source and generate X-ray image data; and an automatic exposure detection board located below the X-ray detection part and configured to generate an X-ray sensing signal for automatic exposure control based on residual X-rays which have passed by or through the X-ray detection part.

An apparatus suitable for detecting X-ray is disclosed. In one example, the apparatus comprises an X-ray absorption layer and a controller. The X-ray absorption layer comprises a first pixel and a second pixel. The controller is configured for determining whether all carriers generated in the X-ray absorption layer by an X-ray photon are collected by the first pixel and the second pixel, and determining the energy of the X-ray photon based on a sum of a first portion of the carriers that is collected by the first pixel and a second portion of the carriers that is collected by the second pixel.

Disclosed herein is a method for making a radiation detector. The method comprises forming a recess into a substrate and forming a semiconductor single crystal in the recess. The semiconductor single crystal may be a cadmium zinc telluride (CdZnTe) single crystal or a cadmium telluride (CdTe) single crystal. The method further comprises forming electrical contacts on the semi conductor single crystal and bonding the substrate to another substrate comprising an electronic system therein or thereon. The electronic system is connected to the electrical contact of the semiconductor single crystal and configured to process an electrical signal generated by the semiconductor single crystal upon absorption of radiation particles.

Disclosed herein is a method for making a radiation detector. The method comprises forming a recess into a substrate and forming a semiconductor single crystal in the recess. The semiconductor single crystal may be a cadmium zinc telluride (CdZnTe) single crystal or a cadmium telluride (CdTe) single crystal. The method further comprises forming electrical contacts on the semi conductor single crystal and bonding the substrate to another substrate comprising an electronic system therein or thereon. The electronic system is connected to the electrical contact of the semiconductor single crystal and configured to process an electrical signal generated by the semiconductor single crystal upon absorption of radiation particles.

Disclosed herein is a radiation detector, comprising: an avalanche photodiode (APD) with a first side coupled to an electrode and configured to work in a linear mode; a capacitor module electrically connected to the electrode and comprising a capacitor, wherein the capacitor module is configured to collect charge carriers from the electrode onto the capacitor; a current sourcing module in parallel to the capacitor, the current sourcing module configured to compensate for a leakage current in the APD and comprising a current source and a modulator; wherein the current source is configured to output a first electrical current and a second electrical current; wherein the modulator is configured to control a ratio of a duration at which the current source outputs the first electrical current to a duration at which the current source outputs the second electrical current.

Some embodiments include a system, comprising: a housing; an imaging array disposed within the housing; an imaging strip disposed within the housing; a first readout circuit coupled to the imaging array; a second readout circuit coupled to the imaging strip; and common electronics coupled to the first readout circuit and the second readout circuit and configured to generate image data in response to at least one of the first readout circuit and the second readout circuit.