A semiconductor material having the molecular formula Cu2l2Se6 is provided. Also provided are solid solutions of semiconductor materials having the formulas Cu2lxBr2-xSeyTe6-y and Cu2lxBr2-xSeyS6-y, where 0≤x≤1 and 0≤y≤3. Methods and devices that use the semiconductor materials to convert incident radiation into an electric signal are also provided. The devices include optoelectronic and photonic devices, such as photodetectors, photodiodes, and photovoltaic cells.

A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

Disclosed herein is a radiation detector, comprising: an avalanche photodiode (APD) with a first side coupled to an electrode and configured to work in a linear mode; a capacitor module electrically connected to the electrode and comprising a capacitor, wherein the capacitor module is configured to collect charge carriers from the electrode onto the capacitor; a current sourcing module in parallel to the capacitor, the current sourcing module configured to compensate for a leakage current in the APD and comprising a current source and a modulator; wherein the current source is configured to output a first electrical current and a second electrical current; wherein the modulator is configured to control a ratio of a duration at which the current source outputs the first electrical current to a duration at which the current source outputs the second electrical current.

One embodiment provides a method for predicting the performance of a device based upon parameters of an underlying material, comprising: measuring a predetermined parameter of a material to be used in manufacturing the device; identifying, from a value generated from the measuring, a value of a property of the material; and determining a predicted performance of the device by correlating the value of the property to a performance value. Other aspects are described and claimed.

Disclosed herein is a method, comprising: for i=1, . . . , N, exposing a pixel (i) of a same radiation detector to a radiation (i) thereby causing an apparent signal (i) in the pixel (i), wherein the pixel (i) is at a temperature (i) at the time the pixel (i) is exposed to the radiation (i); for i=1, . . . , N, determining the temperature (i) of the pixel (i); and for i=1, . . . , N, determining an actual value (i) of a same radiation characteristic of the radiation (i) based on the apparent signal (i) and the temperature (i), wherein N is a positive integer. The radiation characteristic may be radiation intensity, radiation phase, or radiation polarization.

Disclosed herein is a method, comprising: for i=1, . . . , N, exposing a pixel (i) of a same radiation detector to a radiation (i) thereby causing an apparent signal (i) in the pixel (i), wherein the pixel (i) is at a temperature (i) at the time the pixel (i) is exposed to the radiation (i); for i=1, . . . , N, determining the temperature (i) of the pixel (i); and for i=1, . . . , N, determining an actual value (i) of a same radiation characteristic of the radiation (i) based on the apparent signal (i) and the temperature (i), wherein N is a positive integer. The radiation characteristic may be radiation intensity, radiation phase, or radiation polarization.

A radiographic apparatus includes a plurality of pixel groups, bias sources, and a sensing unit, wherein each pixel group includes a pixel including a conversion element for converting radiation into a charge. Each bias source supplies a bias potential to the conversion element of a pixel via a bias line. The sensing unit samples a first signal value indicating a current flowing through a first bias line connected to a first pixel group including a pixel of which a switch element is turned on and a second signal value indicating a current flowing through a second bias line connected to a second pixel group where the switch element is off at timings overlapping at least in part and determines presence or absence of radiation irradiation based on the first signal value and the second signal value. The first and second bias lines have substantially same time constants.

A detector module is provided. The detector module may include a plurality of detector sub-modules. Each of the plurality of detector sub-modules may include a detection layer, at least one data acquisition circuitry, a frame for supporting the detection layer, and a positioning element for assembling the plurality of detector sub-modules. The frame may include a plurality of heat transfer fins that are thermally connected with the at least one data acquisition circuitry for dissipating heat produced by the at least one data acquisition circuitry.

Provided are methods, systems, and computer program products for a LiDAR with an increased dynamic range. The method includes filtering output pulses of an SiPM device to a substantially symmetric pulse shape and capturing timing information and intensity information of the filtered output pulses for at least one predetermined intensity level. The method includes monitoring saturation of the SiPM device, wherein a width of a saturation plateau of a respective output pulse is determined in response to saturation of the SiPM device. The method also includes extrapolating additional timing information and additional intensity information of the respective output pulse using the captured timing information, the captured intensity information, and the determined width of the saturation plateau.

One embodiment is circuitry for implementing a baseline restoration (“BLR”) circuit for a photon-counting computed tomography (“PCCT”) signal chain, the circuitry comprising a multi-level discriminator circuit for receiving a shaper voltage from the PCCT signal chain, the discriminator circuit outputting a digital signal indicative of one of a range of voltages within which the shaper voltage falls; a digital-to-analog converter (“DAC”) connected to receive the digital signal output from the discriminator circuit, the DAC converting the received digital signal to a corresponding active reference voltage; and a feedback circuit that injects a cancellation current proportional to the difference between the shaper voltage and the active reference voltage at the input of the PCCT signal chain.