Disclosed herein are embodiments of photonic crystals implanted into polymers to create durable, flexible structures that can respond to a series of external stimuli for sensing applications. Also disclosed are method embodiments of fabricating such photonic crystals.

The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

A method of fabricating a thin film structure includes printing, using an electrohydrodynamic jet (e-jet) printing apparatus, a first layer comprising a first liquid ink, such that the first layer is supported by a substrate, curing the first layer; printing, using the e-jet printing apparatus, a second layer comprising a second liquid ink, such that the second layer is supported by the first layer, and curing the second layer.

Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

A light emitting device comprises a semiconductor diode structure configured to emit light, a substrate that is transparent to light emitted by the semiconductor diode structure, and a reflective nanostructured layer. The reflective nanostructured layer may be disposed on or adjacent to a bottom surface of the substrate and configured to reflect toward and through a side wall surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence. Alternatively, the reflective nanostructured layer may be disposed on or adjacent to at least one sidewall surface of the substrate and configured to reflect toward and through the bottom surface of the substrate light that is emitted by the semiconductor structure and incident on the reflective nanostructured layer at angles at or near perpendicular incidence.

A method of fabricating a visible spectrum optical component includes: providing a substrate; forming a resist layer over a surface of the substrate; patterning the resist layer to form a patterned resist layer defining openings exposing portions of the surface of the substrate; performing deposition to form a dielectric film over the patterned resist layer and over the exposed portions of the surface of the substrate, wherein a top surface of the dielectric film is above a top surface of the patterned resist layer; removing a top portion of the dielectric film to expose the top surface of the patterned resist layer and top surfaces of dielectric units within the openings of the patterned resist layer; and removing the patterned resist layer to retain the dielectric units over the substrate.

An optical filter may comprise a layer structure comprising a plurality of layers stacked in a thickness direction of the layer structure and including: a plurality of nano-photonic layers formed of a nano-photonic material with icosahedral or dodecahedral symmetry and at least one substrate layer formed of an optically transparent material, wherein one of the at least one substrate layer is positioned between two of the plurality nano-photonic layers in the thickness direction of the layer structure.

This disclosure discloses a display panel, a method for driving the same, and a display device. The display panel includes a first substrate and a second substrate arranged opposite each other, and a plurality of pixel elements located between the first substrate and the second substrate, where each of the plurality of pixel elements includes a photonic crystal light-modulating structure. The photonic crystal light-modulating structure can be configured to adjust an intensity of light emitted from the pixel element, so as to take the place of a liquid crystal layer in the prior art.

Metallic and dielectric domains in phase change materials (PCM) provide spatially localized changes in the local dielectric environment, enabling launching, reflection, and transmission of hyperbolic polaritons (HPs) at the PCM domain boundaries, and tuning the wavelength of HPs propagating in hyperbolic materials over these domains, providing a methodology for realizing planar, sub-diffractive refractive optics. This approach offers reconfigurable control of in-plane HP propagation to provide design optical functionality because the phase change material can be manipulated by changing the local structure, for example, to manipulate polaritons in the adjacent hyperbolic material, thus tuning the wave propagation properties of the polaritons in the hyperbolic material.

The amount of outward shift of a lattice element (131a) and a lattice element (131b), the outward shift being symmetrical with respect to a resonator center on a straight line, is 0.42 to 0.5 times a lattice constant of a photonic crystal. The amount of outward shift of a lattice element (132a) and a lattice element (132b), the outward shift being symmetrical with respect to the resonator center on the straight line, is 0.26 to 0.38 times the lattice constant of the photonic crystal. The amount of outward shift of a lattice element (133a) and a lattice element (133b), the outward shift being symmetrical with respect to the resonator center on the straight line, is 0.13 to 0.19 times the lattice constant of the photonic crystal. The amount of outward shift of a lattice element (134a) and a lattice element (134b), the outward shift being symmetrical with respect to the resonator center on the straight line, is −0.1 to 0 times the lattice constant of the photonic crystal.