An optical arrangement for EUV lithography, including: at least one component (23) having a main body (32) with at least one surface region (30) which is exposed to activated hydrogen (H.sup.+, H*) during operation of the optical arrangement. The main body (32) contains at least one material which forms at least one volatile hydride upon contact of the surface region (30) with the activated hydrogen (H.sup.+, H*). At the surface region, noble metal ions (38) are implanted into the main body (32) in order to prevent the formation of the volatile hydride.

A mirror that has a mirror substrate (12), a reflection layer stack (21) reflecting electromagnetic radiation incident on the optical effective surface (11), and at least one piezoelectric layer (16) arranged between the mirror substrate and the reflection layer stack and to which an electric field for producing a locally variable deformation is applied by way of a first electrode arrangement and a second electrode arrangement situated on alternate sides of the piezoelectric layer. In one aspect, both the first and the second electrode arrangements have a plurality of electrodes (20a, 20b), to each of which an electrical voltage relative to the respective other electrode arrangement can be applied via leads (19a, 19b). Separate mediator layers (17a, 17b) set continuous electrical potential profiles along the respective electrode arrangement, and where said mediator layers differ from one another in their average electrical resistance by a factor of at least 1.5.

A mirror arrangement (30) includes: a substrate (31) with a front side (31a) having a mirror face (32a) reflecting radiation (5), and a rear side (31b) facing away from the front side and on which at least one actuator (27) generating deformations of the mirror face is arranged. A water vapor (36)-sorbing material (33, 42) is formed on the rear side (31b) and forms an adhesive layer (33) for securing the actuator. The layer extends into interspaces (35) between the actuators (27). A surface (33a, 42a) of the water vapor-sorbing material is covered at least partly by a coating (37) which forms a water vapor diffusion barrier.

Methods and systems are provided for ultra-violet curing, and in particular, for ultra-violet curing of optical fiber surface coatings. In one example, a curing device includes a first elliptic cylindrical reflector, with a second elliptic cylindrical reflector housed within the first elliptic cylindrical reflector. The first elliptic cylindrical reflector and second elliptic cylindrical reflector have a co-located focus, and a workpiece to be cured by the curing device may be arranged at the co-located focus.

An optical element (1) includes: a substrate (2); applied to the substrate (2), a multilayer system (3) which reflects EUV radiation (4); and also applied to the multilayer system (3), a protective layer system (5) which comprises a first layer (5a), a second layer (5b) and a third, in particular topmost layer (5c), where the first layer (5a) is disposed closer to the multilayer system (3) than the second layer (5b), and where the second layer (5b) is disposed closer to the multilayer system (3) than the third layer (5c). The second layer (5b) and the third layer (5c) and also preferably the first layer (5a) each have a thickness (d.sub.2, d.sub.3, d.sub.1) of between 0.5 nm and 5.0 nm. A related EUV lithography system having at least one such optical element is also described.

An optical diffraction component has a periodic grating structure profile. The diffraction structure levels are arranged so that a wavelength range around two different target wavelengths diffracted by the grating structure profile has radiation components with three different phases that interfere destructively with one another. Diffraction structure levels predefine a topography of a grating period of the grating structure profile that is repeated regularly along a period running direction. These include a neutral diffraction structure level, a positive diffraction structure level raised relative thereto, and a negative diffraction structure level lowered relative thereto. The neutral diffraction structure level has an extent along the period running direction which is less than 50% of the extent of the grating period. A difference between the two target wavelengths is less than 50%. The result is an optical diffraction component whose possibilities for use can be extended, for example, to stray light suppression.

An optical illumination system guides EUV radiation between a source region of an EUV light source and an object field, in which an object to be imaged is arrangeable. The illumination system has at least two EUV mirror components which reflect the EUV radiation and sequentially guide the EUV radiation between the source region and the object field. An optical diffraction component for suppressing extraneous light radiation is arranged on each of the two EUV mirror components. The two optical diffraction components are designed to suppress different extraneous light wavelengths. A first of the two optical diffraction components, which is arranged on a first of the EUV mirror components, is a grating with at least one first structure depth. A second of the two optical diffraction components, which is arranged on a second of the EUV mirror components, is a grating with at least one second different structure depth. The result can be improved suppression of extraneous light.

An apparatus for generating extreme ultraviolet (EUV) light includes a raw material supply unit supplying a plasma source for generating EUV light. An EUV light source unit uses a laser to generate plasma from the plasma source. A filter is configured to extract EUV light from the light. A first protective layer is disposed on a front surface of the filter. A frame having a first region exposing at least a portion of the filter or the first protective layer is disposed on the first protective layer. A width of the first region is smaller than a width of the first protective layer and smaller than or equal to a width of the filter.

A radiation source apparatus includes a vessel, a laser source, a collector, a horizontal obscuration bar, and a reflective mirror. The vessel has an exit aperture. The laser source is configured to emit a laser beam to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to reflect the collected radiation to the exit aperture of the vessel. The horizontal obscuration bar extends from a sidewall of the vessel at least to a position between the laser source and the exit aperture of the vessel. The reflective mirror is in the vessel and connected to the horizontal obscuration bar.

Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber (26) containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.