The invention relates to coherent single photon sources that provide photons with a high degree of indistinguishability. It is a disadvantage of single photon sources based on QDs in nanophotonic structures that, even at low temperatures, acoustic vibrations interact with the QDs to reduce the coherence of the emitted spectrum. The invention uses mechanical clamping of the nanostructure to damp vibrations leading to a weaker QD—phonon coupling and a higher degree of indistinguishability between successively emitted photons. The clamp is mechanically connected to the length of the photonic nanostructure and has a stiffness and a size sufficient to suppress low frequency vibrations (ω≤10 GHz) in a combined structure of the clamp and the nanostructure.

A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.

An integrated thermal sensor comprising photonic crystal elements that enable photonic elements for photonic sourcing, spectral switching and filtering, sensing of an exposed analyte and detection. In embodiments, applications are disclosed wherein these photonic elements provide a spectrophotometer, a photonic channel switch and a standalone sensor for toxic gases and vapors. An application coupled with a mobile phone is disclosed.

In one embodiment, a nanobeam cavity device includes an elongated waveguide having a central optical cavity, first and second lateral substrates that are positioned on opposed lateral sides of the waveguide, and carrier-injection beams that extend from the first and second lateral substrates to the central optical cavity of the elongated waveguide.

Integrated-optics systems are presented in which an active-material stack is disposed on a coupling layer in a first region to collectively define an OA waveguide that supports an optical mode of a light signal. The coupling layer is patterned to define a coupling waveguide and a passive waveguide, which are formed as two abutting, optically coupled segments of the coupling layer. The lateral dimensions of the active-material stack are configured to control the shape and vertical position of the optical mode at any location along the length of the OA waveguide. The active-material stack includes a taper that narrows along its length such that the optical mode is located completely in the coupling waveguide where the coupling waveguide abuts the passive waveguide. In some embodiments, the passive layer is optically coupled with the OA waveguide and a silicon waveguide, thereby enabling light to propagate between them.

Systems and methods for fabricating a semiconductor chip with an integrated laser diode (or other optical component). An example method may comprise fabricating a recess shaped to receive the optical component. The method may also comprise metallizing at least one surface of the recess. The method may also comprise coupling the optical component to the at least one metallized surface of the recess. The component may comprise a laser diode comprising a p-type semiconductor and an n-type semiconductor. The n-type semiconductor may be electrically coupled to the at least one metallized surface of the recess. The method may also comprise optically coupling an optical output of the laser diode (or other optical component) to an optical input of a photonic interface of the chip with a photonic wire bond and/or at least one polymer lens.

A single-photon source including a monomode photonic wire wherein a single-photon emitter is located, the photonic wire being formed of two coaxial parts that are distinct and spaced from one another along the longitudinal axis, including a lower part resting in contact with a support substrate and including the single-photon emitter.

A wavelength multiplexing device is disclosed. When light is irradiated on a first longitudinal end region of a metal nano-structure, surface plasmon polaritons are generated in the first longitudinal end region. The surface plasmon polaritons and the light are coupled with each other to form first coupled surface plasmon polaritons, wherein the first coupled surface plasmon polaritons propagate along and on a surface of the metal nano-structure. When the first coupled surface plasmon polaritons reach a two-dimensional material layer, excitons are induced in the two-dimensional material layer, wherein the induced excitons and the first coupled surface plasmon polaritons are coupled with each other to form second coupled surface plasmon polaritons. The second coupled surface plasmon polaritons propagate along and on a surface of the metal nano-structure toward a second longitudinal end thereof.

Provided is a method and apparatus for measuring pH in single cells, and a method of manufacturing a nanoprobe therefor. The apparatus for measuring pH in a single cell comprises: a nanoprobe formed by labeling a pH-responsive fluorescent material to a nanowire grown on a tapered tip of an optical fiber; a manipulator capable of regulating a three-dimensional movement of the nanoprobe to insert the nanoprobe into a single living cell; a light source for applying light to the optical fiber; an optical coupler for connecting the optical fiber with another optical fiber to transmit the light incident through the optical fiber to the nanoprobe and to transmit a fluorescence signal obtained from the nanoprobe through the another optical fiber; and a spectrometer for obtaining a pH value by receiving the fluorescence signal through the another optical fiber and analyzing spectral data from the fluorescence signal.

Provided is a method of forming a micro/nanowire having a nanometer- to micrometer-sized diameter at predetermined positions of an object. The method includes: preparing a micro/nanopipette having a tip with an inner diameter which is substantially the same as the diameter of the micro/nanowire to be formed; filling the micro/nanopipette with a solution containing a micro/nanowire-forming material; brining the solution into contact with the object through the tip of the micro/nanopipette; and pulling the micro/nanopipette from the object at a pulling speed lower than or equal to a predetermined critical speed (ν.sub.c) to obtain a micro/nanowire having substantially the same diameter as the inner diameter of the micro/nanopipette tip.