Passive components adapted for integration with at least one active semiconductor device, in an embodiment, comprise at least one metallic structure dimensioned and arranged to absorb and/or reflect a major fraction of incident electromagnetic radiation received at one or more wavelengths of a first group of wavelengths. This prevents radiation within the first group of wavelengths from being received and/or processed by the at least one active device. In an embodiment, one or more metallic structures are dimensioned and arranged to direct an amount of incident radiation, received at one or more wavelengths of a second group of wavelengths, sufficient to enable receiving or processing of incident radiation within the second group of wavelengths by the at least one active semiconductor device. In some embodiments, the passive component comprises a passive optical filter for use in spectroscopic applications, and the active semiconductor device is a detector or sensor.

Some embodiments are directed to optical conductors comprising one or more fibrillar organic supramolecular species including an association of triarylamines, methods of preparation and applications thereof as optical and plasmonic waveguides.

Methods and apparatus for concentrating light into a specified focal volume and for collecting light from a specified volume. Incident light is coupled through a plurality of successive transmissive asymmetric microstructure elements. The succession of transmissive asymmetric microstructure elements may be designed by representing an electromagnetic field as a linear combination of eigenmodes of one of the succession of transmissive asymmetric microstructure elements. The asymmetric microstructure elements are represented as a plurality of mesh lattice units and eigenmode solutions to Maxwell's equations are obtained for each mesh lattice unit subject to consistent boundary conditions. S-matrix formalism is employed to calculate a field output and weighting coefficients for the eigenmodes are selected to achieve a specified set of field output characteristics.

The invention relates to a semiconductor structure, including: a semiconductor layer, including a membrane suspended above a carrier layer, the suspended membrane being formed of a central section, which is tensilely stressed and of a plurality of tensioning arms; and least one optical cavity, bounded by two optical reflectors, which are placed in the lateral sections on either side of the central section; wherein: the central section is designed to transmit in the direction of the optical reflectors at least one uneven-order mode; and each of said optical reflectors is formed of two lateral half-reflectors, which are arranged on either side of a longitudinal axis of the lateral section, so as to at least partially reflect said uneven-order mode.

An optical core made from at least on topological insulator microfiber. A cryogenic cooling layer surrounds the optical core. An insulative layer surrounds the cryogenic cooling layer. In one embodiment, the insulative layer comprises a layer of photonic crystal material.

The application relates to methods of analyzing luminescent species. A substrate is provided that has a plurality of zero mode waveguides having apertures that extend through an upper non-reflective layer that is disposed on a lower transparent layer of a substrate. The apertures have non-reflective oxide layers on the reflective side walls of the apertures, the side walls having a thickness of greater than 10 nm, and the oxide layer is formed by oxidizing the non-reflective layer. The volume within the oxide layer defines a solution volume, and the volume within the reflective walls defines a ZMW volume. Having such non-reflective layers on the walls of the ZMW usefully decouples the solution volume from the ZMW volume.

An optical core made from at least on topological insulator microfiber. A cryogenic cooling layer surrounds the optical core. An insulative layer surrounds the cryogenic cooling layer. In one embodiment, the insulative layer comprises a layer of photonic crystal material.

A strip of sacrificial semiconductor material is formed on top of a non-sacrificial semiconductor material substrate layer. A conformal layer of the non-sacrificial semiconductor material is epitaxially grown to cover the substrate layer and the strip of sacrificial semiconductor material. An etch is performed to selectively remove the strip of sacrificial semiconductor material and leave a hollow channel surrounded by the conformal layer and the substrate layer. Using an anneal, the conformal layer and the substrate layer are reflowed to produce an optical waveguide structure including the hollow channel.

Embodiments are directed to a (quasi) one-dimensional photonic crystal cavity. This cavity comprises a set of aligned pillars, where the pillars are embedded in a cladding. At least one of the pillars has a sandwich structure, wherein a layer of nonlinear optical material is between two layers of materials having, each, a refractive index that is higher than the refractive index of the nonlinear optical material. Embodiments can further include an all-optical modulator or an all-optical transistor, comprising a photonic crystal such as described above. Finally, embodiments are further directed to methods for modulating an optical signal, using such a photonic crystal cavity.

Electronic-photonic integrated circuits (EPICs), such a monolithically integrated circuit, are considered to be next generation technology that takes advantage of high-speed optical communication and nanoscale electronics. Atomically thin transition metal dichalcogenides (TMDs) may serve as a perfect platform to realize EPIC. The generation and detection of light by a monolayer TMD at nanoscale through surface plasmon polaritons (SPPs) may be utilized to provide optical communication. The bidirectional nature of the TMDs allow such a layer to be utilizes as part of emitters or photodetectors for EPICs.