Electrical test of optical components via metal-insulator-semiconductor capacitor structures is provided via a plurality of optical devices including a first material embedded in a second material, wherein each optical device is associated with a different thickness range of a plurality of thickness ranges for the first material; a first capacitance measurement point including the first material embedded in the second material; and a second capacitance measurement point including a region from which the first material has been replaced with the second material.

Method and apparatus for enhancing resolution in a light detection and ranging (LiDAR) system. In some embodiments, an emitter emits light in the form of multiplexed beams of randomized, multiple wavelengths across a field of view (FoV). A detector uses one or more detection channels to detect the multiplexed beams reflected from a target within the FoV to decode range information associated with the target. The multiplexed beams may be generated by multiple light sources such as laser diodes, or a single source such as a frequency comb device. Randomization may be applied via a pseudorandom bit sequence modulator, and multiplexing/demultiplexing may be performed using waveguides and micro-resonance rings (MRRs). The multiplexed beam may be emitted using an optical phase array (OPA) integrated circuit device to scan the FoV simultaneously using the different wavelengths. The range information can be used to adaptively adjust the wavelengths in a subsequent scan.

A chip carrier socket for an electronic-photonic integrated-circuit (EPIC) assembly comprises a carrier bottom and a carrier top configured to mate to the carrier bottom while enclosing the EPIC assembly within an enclosed cavity. The carrier bottom comprises one or more conductive vias passing from a first surface of the carrier bottom to an opposite second surface of the carrier bottom, each conductive via providing electrical connectivity between an electrically conductive pad on the first surface of the carrier bottom and a respective electrically conductive pad, solder ball, or electrically conductive spring on the second surface of the carrier bottom. One or both of the carrier bottom and the carrier top comprises a fluid inlet port and a fluid outlet port. Further, either or both of the carrier bottom and the bottom top comprises an optical via passing from one surface to another of the carrier bottom or carrier top.

A photoacoustic apparatus, comprising: at least one optical amplifier, configured to produce light; at least one photonic integrated circuit, configured as a tunable light filter; light guiding means, wherein the at least one optical amplifier, at least one photonic integrated circuit and light guiding means are configured as an optical cavity to produce laser light having an optical path within the optical cavity; and at least one acoustic sensor configured to detect sound produced by analyte introduced into the optical path of the laser light.

Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

Provided is an optical isolator including a semiconductor substrate, an optical attenuator and an optical amplifier aligned with each other on the semiconductor substrate, an input optical waveguide connected to the optical attenuator, and an output optical waveguide connected to the optical amplifier, wherein a gain of the optical amplifier decreases based on an intensity of light incident on the optical amplifier increasing, wherein a first input light incident on the optical attenuator through the input optical waveguide is output as a first output light through the output optical waveguide, and a second input light incident on the optical amplifier through the output optical waveguide is output as a second output light through the input optical waveguide, and wherein when an intensity of the first input light and an intensity of the second input light are equal, an intensity of the first output light is greater than an intensity of the second output light.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

An electronic device may have a display overlapped by an image transport layer such as a coherent fiber bundle or layer of Anderson localization material. The image transport layer may have an input surface that receives an image from the display and a corresponding output surface to which the image is transported. The input surface and output surface may have different shapes. During fabrication of the image transport layer, a peripheral portion of the image transport layer may be laterally indented to form a peripheral recess. Electrical components such as optical and radio-frequency components may be mounted in the recess and may be overlapped by peripheral portions of the image transport layer and/or may be mounted under the display.

A novel polymer optical waveguide and method of manufacturing is presented herein. A digitally manufactured process is described which utilizes a micro-dispensed UV optical adhesive as the contour guiding cladding, a fused deposition modeling technology for creating a core, and a subtractive laser process to finish the two ends of the optical interconnect. The optical waveguide can be printed directly on a circuit board in some embodiments. Alternatively, using a slightly modified process including a step to bond the optical fiber to the substrate, the optical interconnect can be manufactured on a flexible substrate.

A Group III-Nitride quantum well laser including a distributed Bragg reflector (DBR). In some embodiments, the DBR includes Scandium. In some embodiments, the DBR includes Al.sub.1-xSc.sub.xN, which may have 0<x≤0.45.