A Group III-Nitride quantum well laser including a distributed Bragg reflector (DBR). In some embodiments, the DBR includes Scandium. In some embodiments, the DBR includes Al.sub.1-xSc.sub.xN, which may have 0<x≤0.45.

An optical circuit includes one or more input waveguides, a plurality of output waveguides, and a reflector structure. At least a portion of the reflector structure forms an interface with the one or more input waveguides. The portion of the reflector structure has a smaller refractive index than the one or more input waveguides. An electrical circuit is electrically coupled to the optical circuit. The electrical circuit generates and sends different electrical signals to the reflector structure. In response to the reflector structure receiving the different electrical signals, a carrier concentration level at or near the interface or a temperature at or near the interface changes, such that incident radiation received from the one or more input waveguides is tunably reflected by the reflector structure into a targeted output waveguide of the plurality of output waveguides.

A two-channel photonic demultiplexer includes an input region to receive a multi-channel optical signal, two output regions, each adapted to receive a corresponding one of two distinct wavelength channels demultiplexed from the multi-channel optical signal, and a dispersive region including a first material and a second material inhomogeneously interspersed to form a plurality of interfaces that collectively structure the dispersive region to optically separate each of the two distinct wavelength channels from the multi-channel optical signal and respectively guide the first distinct wavelength channel to a first output region and the second distinct wavelength channel to the second output region when the input region receives the multi-channel optical signal. At least one of the first material or the second material is structured within the dispersive region to be schematically reproducible by a feature shape with a pre-determined width.

A structure includes an optical interposer attached to a package substrate, wherein the optical interposer includes a silicon waveguide, a first photonic component optically coupled to the silicon waveguide, a second photonic component optically coupled to the silicon waveguide, and an interconnect structure extending over the silicon waveguide, over the first photonic component, and over the second photonic component, wherein the interconnect structure is electrically connected to the first photonic component and to the second photonic component, a first semiconductor device attached to the interconnect structure, wherein the first semiconductor device is electrically connected to the first photonic component through the interconnect structure, and a second semiconductor device attached to the interconnect structure, wherein the second semiconductor device is electrically connected to the second photonic component through the interconnect structure.

Provided are a single-photon source device and a single-photon source system including same. The single-photon source device includes a substrate, a straight waveguide extending in a first direction on the substrate, a first coupling layer which is provided on the straight waveguide and has a first point defect, at least one first electrode which is adjacent to the first point defect and provided on the first coupling layer, a ring waveguide which is adjacent to the straight waveguide and provided on the substrate, and at least one second electrode provided on the ring waveguide.

Structures for a wavelength division multiplexing filter and methods of fabricating a structure for a wavelength division multiplexing filter. The structure includes a first waveguide core having a first section and a second section. The first section and the second section have a first notched sidewall and a second notched sidewall opposite to the first notched sidewall. The structure further includes a second waveguide core positioned with a first offset in a first direction relative to the first section and the second section of the first waveguide core and with a second offset in a second direction relative to the first section and the second section of the first waveguide core. The second direction is transverse to the first direction.

A Mach-Zehnder interferometer (MZI) filter comprising one or more passive compensation structures are described. The passive compensation structures yield MZI filters that are intrinsically tolerant to perturbations in waveguide dimensions and/or other ambient conditions. The use of n+1 waveguide widths can mitigate n different sources of perturbation to the filter. The use of at least three different waveguide widths for each Mach-Zehnder waveguide can alleviate sensitivity of filter performance to random width or temperature variations. A tolerance compensation portion is positioned between a first coupler section and a second coupler section, wherein the tolerance compensation portion includes a first compensation section having a second width, a second compensation section having a third width and a third compensation section having a fourth width, wherein the fourth width is greater than the third width and the third width is greater than the second width.

An optoelectronic chip includes optical inputs having different passbands, a photonic circuit to be tested, and an optical coupling device configured to couple said inputs to the photonic circuit to be tested.

Examples disclosed herein relate to quantum-dot (QD) photonics. In accordance with some of the examples disclosed herein, a QD semiconductor optical amplifier (SOA) may include a silicon substrate and a QD layer above the silicon substrate. The QD layer may include an active gain region to amplify a lasing mode received from an optical signal generator. The QD layer may have a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects. A waveguide may be included in an upper silicon layer of the silicon substrate. The waveguide may include a mode converter to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.

A waveguide illuminator includes an input waveguide, a waveguide splitter coupled to the input waveguide, and a waveguide array coupled to the waveguide splitter. The waveguide array includes an array of out-couplers out-coupling portions of the split light beam to form an array of out-coupled beam portions for illuminating a display panel. To reduce optical interference, the waveguide illuminator may have two interlaced waveguide arrays energized by two different light sources. Output polarizations of neighboring light pixels of a display illuminated with such waveguide illuminator may be orthogonal to each other. The frames to be displayed may be broken down into sequentially displayed sub-frames with interleaved pixels.