A wavelength converter includes an optical waveguide substrate configured to include a plurality of optical waveguides formed with different design values, an incidence-side optical fiber from which signal light and excitation light are incident to the optical waveguide substrate, and an emission-side optical fiber to which light including converted light having a wavelength different from a wavelength of the signal light is extracted from the optical waveguide substrate, wherein the incidence-side optical fiber and the emission-side optical fiber are optically coupled to one optical waveguide among the plurality of optical waveguides.

A wavelength converter includes an optical waveguide substrate configured to include a plurality of optical waveguides formed with different design values, an incidence-side optical fiber from which signal light and excitation light are incident to the optical waveguide substrate, and an emission-side optical fiber to which light including converted light having a wavelength different from a wavelength of the signal light is extracted from the optical waveguide substrate, wherein the incidence-side optical fiber and the emission-side optical fiber are optically coupled to one optical waveguide among the plurality of optical waveguides.

In integrated optical structures (e.g., silicon-to-silicon-nitride mode converters) implemented in semiconductor-on-insulator substrates, wire waveguides whose sidewalls substantially consist of portions coinciding with crystallographic planes and do not extend laterally beyond the top surface of the wire waveguide may provide benefits in performance and/or manufacturing needs. Such wire waveguides may be manufactured, e.g., using a dry-etch of the semiconductor device layer down to the insulator layer to form a wire waveguide with exposed sidewalls, followed by a smoothing crystallographic wet etch.

Methods and apparatuses for mode conversion. An apparatus that includes a substrate, a first waveguide, a second waveguide, a micro-electro-mechanical systems (MEMS) perturber, and a controller is provided. The first waveguide is formed on the substrate includes: (i) an input section, (ii) a bend section, and (iii) an output section. The second waveguide is also formed on the substrate and is disposed adjacent to a portion of the input section of the first waveguide. A portion of the second waveguide is separated from the input section of the first waveguide by a coupling gap. The perturber is disposed above the first waveguide and configured to move between a first position that is distal from a surface of the input section of the first waveguide and a second position that is closer to the surface of the input section of the first waveguide than the second position. The controller is configured to control a movement of the perturber between the first position and the second position. When the perturber is in the first position, a mode effective refractive index of the first waveguide is lower than the mode effective refractive index of the first waveguide when the perturber is in the second position.

Methods and apparatuses for mode conversion. An apparatus that includes a substrate, a first waveguide, a second waveguide, a micro-electro-mechanical systems (MEMS) perturber, and a controller is provided. The first waveguide is formed on the substrate includes: (i) an input section, (ii) a bend section, and (iii) an output section. The second waveguide is also formed on the substrate and is disposed adjacent to a portion of the input section of the first waveguide. A portion of the second waveguide is separated from the input section of the first waveguide by a coupling gap. The perturber is disposed above the first waveguide and configured to move between a first position that is distal from a surface of the input section of the first waveguide and a second position that is closer to the surface of the input section of the first waveguide than the second position. The controller is configured to control a movement of the perturber between the first position and the second position. When the perturber is in the first position, a mode effective refractive index of the first waveguide is lower than the mode effective refractive index of the first waveguide when the perturber is in the second position.

Disclosed are semiconductor packages and manufacturing method of the semiconductor packages. In one embodiment, a semiconductor package includes a substrate, a first waveguide, a semiconductor die, and an adhesive layer. The first waveguide is disposed on the substrate. The semiconductor die is disposed on the substrate and includes a second waveguide aligned with the first waveguide. The adhesive layer is disposed between the first waveguide and the second waveguide.

Example implementations described herein are directed to a system involving one or more photonic integrated circuits having multi-mode waveguides and connected to a printed optical board through the use of multi-mode waveguide connectors described herein. The printed optical board can include an embedded multi-mode waveguide bus to facilitate optical signal to and from the photonic integrated circuits. The system can also include a chiplet such as a photonic integrated circuit with a single mode waveguide configured to connect to an optical fiber cable.

Example implementations described herein are directed to a system involving one or more photonic integrated circuits having multi-mode waveguides and connected to a printed optical board through the use of multi-mode waveguide connectors described herein. The printed optical board can include an embedded multi-mode waveguide bus to facilitate optical signal to and from the photonic integrated circuits. The system can also include a chiplet such as a photonic integrated circuit with a single mode waveguide configured to connect to an optical fiber cable.

A compact silicon waveguide mode converter, a dielectric meta-surface structure based on periodical oblique subwavelength perturbations, including a top silicon structure with oblique subwavelength perturbations etched in certain periods with period length of Λ, a duty cycle and an oblique angle θ on the SOI substrate. The invention adopts an all-dielectric meta-surface structure with oblique subwavelength perturbation, which can achieve a compact mode conversion from fundamental mode to arbitrary high-order mode of silicon waveguide, and can improve the optical communication capacity greatly.

A compact silicon waveguide mode converter, a dielectric meta-surface structure based on periodical oblique subwavelength perturbations, including a top silicon structure with oblique subwavelength perturbations etched in certain periods with period length of Λ, a duty cycle and an oblique angle θ on the SOI substrate. The invention adopts an all-dielectric meta-surface structure with oblique subwavelength perturbation, which can achieve a compact mode conversion from fundamental mode to arbitrary high-order mode of silicon waveguide, and can improve the optical communication capacity greatly.