An optical arrangement for EUV lithography, including: at least one component (23) having a main body (32) with at least one surface region (30) which is exposed to activated hydrogen (H.sup.+, H.sup.*) during operation of the optical arrangement. The main body (32) contains at least one material which forms at least one volatile hydride upon contact of the surface region (30) with the activated hydrogen (H.sup.+, H.sup.*). At the surface region, noble metal ions (38) are implanted into the main body (32) in order to prevent the formation of the volatile hydride.

A directional illumination apparatus comprises an array of micro-LEDs that may be organic LEDs (OLEDs) or inorganic LEDs and an aligned solid catadioptric micro-optic array arranged to provide a water vapour and oxygen barrier for the micro-LEDs as well as reduced sensitivity to thermal and pressure variations. The shape of the interfaces of the solid catadioptric micro-optic array is arranged to provide total internal reflection for light from the aligned micro-LEDs using known transparent materials. A thin and efficient illumination apparatus may be used for collimated illumination in environmental lighting, display backlighting or direct display.

An optical lithography system for patterning semiconductor devices and a method of using the same are disclosed. In an embodiment, an apparatus includes an optical path; a prism disposed on the optical path; a lens disposed on the optical path; and a tunable mirror disposed on the optical path, the tunable mirror including a mirror having a concave surface at a front-side thereof; a rear support attached to a backside of the mirror; and a plurality of fine-adjustment screws extending from the rear support to the backside of the mirror.

A plasma light source with lamp house correction is disclosed. The system may include a pump source configured to generate pump illumination. The pump illumination may be directed, by an elliptical reflector element, to a volume of gas contained within a plasma lamp in order to generate a plasma. The plasma may be configured to generate broadband illumination. The system may also include a correction plate and/or an aspherical elliptical reflector element configured to alter the pump illumination to correct for aberrations introduced by the plasma lamp. The system may also include an additional aspherical correction plate configured to alter the broadband illumination to correct for aberrations introduced by optical elements of the system.

Techniques are disclosed for optical distortion reduction in projection systems for scanning projection and/or lithography. A projection system includes an illumination system configured to generate illumination radiation for generating an image of an object to be projected onto an image plane of the projection system. The illumination system includes a field omitting illumination condenser configured to receive the illumination radiation from a radiation source and provide a patterned illumination radiation beam to generate the image of the object, wherein the patterned illumination radiation beam comprises an omitted illumination portion corresponding to a ridge line of a roof prism disposed within an optical path of the projection system.

Imaging objectives and inspection systems equipped with such imaging objectives are disclosed. The imaging objective may include a front objective configured to produce a diffraction limited intermediate image. The imaging objective may also include a relay configured to receive the intermediate image produced by the front objective. The relay may include three spherical mirrors positioned to deliver a projection of the intermediate image to a fixed image plane.

Techniques are disclosed for magnification compensation and/or beam steering in optical systems. An optical system may include a lens system to receive first radiation associated with an object and direct second radiation associated with an image of the object toward an image plane. The lens system may include a set of lenses, and an actuator system to selectively adjust the set of lenses to adjust a magnification associated with the image symmetrically along a first and a second direction. The lens system may also include a beam steering lens to direct the first radiation to provide the second radiation. In some examples, the lens system may also include a second set of lenses, where the actuator system may also selectively adjust the second set of lenses to adjust the magnification along the first or the second direction. Related methods are also disclosed.

A laser system includes: A. a solid-state laser apparatus configured to output a pulse laser beam having light intensity distribution in a Gaussian shape that is rotationally symmetric about an optical path axis; B. an amplifier including a pair of discharge electrodes and configured to amplify the pulse laser beam in a discharge space between the pair of discharge electrodes; and C. a conversion optical system configured to convert the light intensity distribution of the pulse laser beam output from the amplifier into a top hat shape in each of a discharge direction of the pair of discharge electrodes and a direction orthogonal to the discharge direction.

A catoptric system having a reference axis and including a reflective pattern-source (carrying a substantially one-dimensional pattern) and a combination of two optical reflectors disposed sequentially to transfer EUV radiation incident onto the first optical component to the pattern-source the substantially one-dimensional pattern of which is disposed in a curved surface. In one case, such combination includes only two optical reflectors (each may contain multiple constituent components). The combination is disposed in a fixed spatial and optical relationship with respect to the pattern-source, and represents an illumination unit (IU) of a 1D EUV exposure tool that additionally includesincludes a projection optical sub-system configured to form an optical image of the pattern-source on an image plane with the use of only two beams of radiation. These only two beams of radiation originate at the pattern-source from the EUV radiation transferred onto the pattern-source.

A catadioptric projection objective for images an object field onto an image field via imaging radiation. The projection objective includes at least one reflective optical component and a measuring device. The reflective optical component, during the operation of the projection objective, reflects a first part of the imaging radiation and transmits a second part of the imaging radiation. The reflected, first part of the imaging radiation at least partly contributes to the imaging of the object field. The transmitted, second part of the imaging radiation is at least partly fed to a measuring device. This allows a simultaneous exposure of the photosensitive layer at the location of the image field with the imaging radiation and monitoring of the imaging radiation with the aid of the measuring device.