A thin-film device for a wavelength-tunable semiconductor laser. The device includes a cavity between a high-reflectivity facet and an anti-reflection facet designed to emit a laser light of a wavelength in a tunable range determined by two Vernier-ring resonators with a joint-free-spectral-range between a first wavelength and a second wavelength. The device further includes a film including multiple pairs of a first layer and a second layer sequentially stacking to an outer side of the high-reflectivity facet. Each layer in each pair has one unit of respective optical thickness except one first or second layer in one pair having a larger optical thickness. The film is configured to produce inner reflectivity of the laser light from the high-reflectivity facet at least >90% for wavelengths in the tunable range starting from the first wavelength but at least <50% for wavelengths in a 25 nm range around the second wavelength.

An adiabatic coupling phase modulation module has an optical substrate, an asymmetric adiabatic coupling polarization beam splitter and two electro-optical phase modulators. The asymmetric adiabatic coupling polarization beam splitter performs band spatial filtering on a quantum light source signal to output a light source signal of a specific wavelength band, and performs polarization spatial filtering on the light source signal of specific wavelength band to output a first orthogonal polarization direction light source signal of the specific wavelength band and a second orthogonal polarization direction light source signal of the specific wavelength band. The two electro-optical phase modulators respectively perform phase coding processes on the first orthogonal polarization direction light source signal and the second orthogonal polarization direction light source signal.

An optical device includes a substrate, a dielectric substance laminated on the substrate, an optical waveguide surrounded by the dielectric substance, a heater electrode that is disposed above the optical waveguide and that is surrounded by the dielectric substance, and a trench. The trench includes a plurality of split trenches each of which is formed in a hollow segmented shape in the dielectric substance and in which the split trenches are disposed in parallel with the heater electrode. The split trenches are disposed in parallel with the heater electrode such that an area of the dielectric substance located between an end of each of the split trenches and a side surface of the heater electrode is gradually expanded.

A semiconductor structure includes, an optical component and a thermal control mechanism. The optical component includes a first main path that splits into a first side path and a second side path so that the first side path and the second side path are separated from one another. The thermal control mechanism configured to control a temperature of both the first side path and the second side path, wherein the first thermal control mechanism includes a first thermoelectric member and a second thermoelectric member that are positioned between the first side path and the second side path and the first thermoelectric member and the second thermoelectric member have opposite conductive types.

A display device having a curved display surface is provided and includes a back cover; a plurality of light guide plates supported by the back cover; a plurality of light sources configured to cause light to be incident on the light guide plates; and an optical sheet covering the light guide plates, wherein the optical sheet faces the light guide plates.

A laser beam phase-modulation device, a laser beam steering device, and a laser beam steering system including the same are provided. The laser beam phase-modulation device includes a refractive index conversion layer having a refractive index that is changed according to an electrical signal applied thereto, the refractive index conversion layer including an upper surface on which the laser beam is incident and a lower surface opposite the upper surface, at least one antenna pattern embedded in the upper surface of the refractive index conversion layer, and a metal mirror layer provided under the lower surface of the refractive index conversion layer and configured to reflect the laser beam.

Apparatus and method for transferring data in a data storage system, such as but not limited to a hard disc drive (HDD). An optical link is provided between an analog front end (AFE) of a data storage device controller circuit (SOC) and a preamplifier/driver circuit (preamp) mounted to a rotary actuator to transfer an analog domain signal. A selected component is extracted from the signal using a modulation element such as a micro-resonance ring (MRR) or a Mach-Zehnder Interferometer Modulation (MZM) device. The extracted component is forwarded to a processing circuit to facilitate a transfer of data between a local memory and a non-volatile memory (NVM). The optical link includes a flexible portion in a flex circuit affixed to the rotary actuator and which supports the preamp. Multiplexed read, write, and power control signals are concurrently transmitted via the optical link. The link can concurrently service multiple head-disc assemblies (HDAs).

A push-pull device (10) comprises: a first waveguide (W1) arranged between its first and second electrode (S11, S12) and a second waveguide (W2) arranged between its first and a second electrode (S21, S22). Electrically conductive structures (T11, T12, T21, T22) extend away from one or more of the electrodes (S11, S12, S21, S22) for electrically connecting at least two of the electrodes (S11, S12, S21, S22). The waveguides (W1, W2) and the electrodes (S11, S12, S21, S22) originate from a pre-fabrication process. The waveguides (W1, W2) are poled by a poling (P) originating from a poling process. The electrically conductive structures (T11, T12, T21, T22) originating: from the pre-fabrication process, wherein one or more of the electrically conductive structures (T11, T12, T21, T22) extend to one or more electrically non-conductive gaps (G1, G2), and wherein the device (10) further comprises one or more electrically conductive elements (C1, C2) for electrically connecting two of the electrodes (S11, S12, S21, S22), the electrically conductive elements (C1, C2) being related to the electrically non-conductive gaps (G1, G2) and originating from a post-fabrication process; and/or from a post-fabrication process.

Described herein are methods, systems, and apparatuses to utilize an electro-optic modulator including one or more heating elements. The modulator can utilize one or more heating elements to control an absorption or phase shift of the modulated optical signal. At least the active region of the modulator and the one or more heating elements of the modulator are included in a thermal isolation region comprising a low thermal conductivity to thermally isolate the active region and the one or more heating elements from a substrate of the PIC.

A silicon on insulator (SOI) photonic device having a waveguide is provided that includes a mode overlap portion with a topology optimized structure situated below an electrode of the capacitance structure. The device can significantly change a refractive index in a volume of mode overlap depending upon the applied potential to the capacitor and allows for a π phase shift in a modest mode overlap volume. The topology optimized structure has a waveguide and substrate that are partitioned in three dimensions using an extruded projection design. The electrode is a transition metal di-chalcogenide monolayer sheet (2D TMD). The enhanced mode overlay from the topology optimized waveguide portion allows a large reduction in the length of the waveguide with the mode overlap to achieve the needed phase shift for a photonic device.