The present embodiment relates to a light-emitting device that enables reduction in attenuation or diffraction effect caused by a semiconductor light-emitting device with respect to modulated light outputted from a spatial light modulator, and the light-emitting device includes the semiconductor light-emitting device that outputs light from a light output surface and the reflection type spatial light modulator that modulates the light. The spatial light modulator includes a light input/output surface having the area larger than the area of a light input surface of the semiconductor light-emitting device, modulates light taken through a region facing the light output surface of the semiconductor light-emitting device in the light input/output surface, and outputs the modulated light from another region of the light input/output surface to a space other than the light input surface of the semiconductor light-emitting device.

The present embodiment relates to a light-emitting device that enables reduction in attenuation or diffraction effect caused by a semiconductor light-emitting device with respect to modulated light outputted from a spatial light modulator, and the light-emitting device includes the semiconductor light-emitting device that outputs light from a light output surface and the reflection type spatial light modulator that modulates the light. The spatial light modulator includes a light input/output surface having the area larger than the area of a light input surface of the semiconductor light-emitting device, modulates light taken through a region facing the light output surface of the semiconductor light-emitting device in the light input/output surface, and outputs the modulated light from another region of the light input/output surface to a space other than the light input surface of the semiconductor light-emitting device.

A method of equalising optical losses, at a required operating wavelength, in waveguide sections in an optoelectronic device comprising a first semiconductor waveguide section and a second semiconductor waveguide section, the method comprising determining (1301) a first optical loss through the first waveguide section for a signal with the required operating wavelength, determining (1302) a second optical loss through the second waveguide section for the signal, determining (1303) a loss difference between the first optical loss and the second optical loss, determining (1304) a first bias voltage based on the loss difference and the operating wavelength, such that the loss difference is reduced, and applying (1305) the bias voltage to the first waveguide section.

There is provided an optical modulator capable of electrically controlling intensity of transmitted light in a desired wavelength range at a high speed and reducing the size of a device containing the optical modulator. The optical modulator includes a first electrode; a second electrode; and a dielectric layer provided between the first and second electrodes. At least one of the first electrode and the second electrode comprises at least one layer of graphene. There are also provided an imaging device and a display apparatus each containing the optical modulator.

There is provided an optical modulator capable of electrically controlling intensity of transmitted light in a desired wavelength range at a high speed and reducing the size of a device containing the optical modulator. The optical modulator includes a first electrode; a second electrode; and a dielectric layer provided between the first and second electrodes. At least one of the first electrode and the second electrode comprises at least one layer of graphene. There are also provided an imaging device and a display apparatus each containing the optical modulator.

A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

Disclosed are an optical modulator and control method therefor, the optical modulator includes an input waveguide, an adjustable ring-shaped resonant cavity, a feedback loop waveguide, a first mode converter, and an output waveguide. The input waveguide is configured to receive an initial optical signal, the adjustable ring-shaped resonant cavity is configured to perform resonance and modulation processing on the initial optical signal and output a first optical signal, the feedback loop waveguide is configured to receive and transmit the first optical signal, the first mode converter is configured to perform mode conversion processing on the first optical signal and output a second optical signal to the adjustable ring-shaped resonant cavity, the adjustable ring-shaped resonant cavity is further configured to perform resonance and modulation processing on the second optical signal and output a third optical signal, and the output waveguide configured to receive and output the third optical signal.

A display panel is disclosed, which includes: a substrate; plural scan lines disposed on the substrate and extending along a first direction; a first insulating layer disposed on the scan lines; plural data lines disposed on the first insulating layer and extending along a second direction; a second insulating layer disposed on the data lines; and a common electrode disposed on the second insulating layer and including a through hole; wherein, the through hole includes a first region and a second region, the first region has a first maximum width along the first direction, the second region has a second maximum width along the first direction, and a ratio of the second maximum width over the first maximum width is greater than 0 and less than 1.

A display panel is disclosed, which includes: a substrate; plural scan lines disposed on the substrate and extending along a first direction; a first insulating layer disposed on the scan lines; plural data lines disposed on the first insulating layer and extending along a second direction; a second insulating layer disposed on the data lines; and a common electrode disposed on the second insulating layer and including a through hole; wherein, the through hole includes a first region and a second region, the first region has a first maximum width along the first direction, the second region has a second maximum width along the first direction, and a ratio of the second maximum width over the first maximum width is greater than 0 and less than 1.

A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.