A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.

An optical attenuating structure is provided. The optical attenuating structure includes a substrate, a waveguide, doping regions, an optical attenuating member, and a dielectric layer. The waveguide is extended over the substrate. The doping regions are disposed over the substrate, and include a first doping region, a second doping region opposite to the first doping region and separated from the first doping region by the waveguide, a first electrode extended over the substrate and in the first doping region, and a second electrode extended over the substrate and in the second doping region. The first optical attenuating member is coupled with the waveguide and disposed between the waveguide and the first electrode. The dielectric layer is disposed over the substrate and covers the waveguide, the doping regions and the first optical attenuating member.

A beam steering apparatus may include: a mirror; a refractive index modulation layer disposed on the mirror; a nanoantenna on the refractive index modulation layer; and an insulating layer disposed between the nanoantenna and the refractive index modulation layer, wherein the insulating layer has a thickness distribution in which a first thickness of the insulating layer on a central region of the mirror is less than a second thickness of the insulating layer on an edge region of the mirror, wherein a refractive index of the refractive index modulation layer is modulated to control propagation direction of beam.

A beam steering apparatus may include: a mirror; a refractive index modulation layer disposed on the mirror; a nanoantenna on the refractive index modulation layer; and an insulating layer disposed between the nanoantenna and the refractive index modulation layer, wherein the insulating layer has a thickness distribution in which a first thickness of the insulating layer on a central region of the mirror is less than a second thickness of the insulating layer on an edge region of the mirror, wherein a refractive index of the refractive index modulation layer is modulated to control propagation direction of beam.

A lighting device comprises a light-emitting module with light-emitting elements, wherein the light-emitting elements are arranged adjacent to each other and are configured to emit light towards a light-emitting side. The light-emitting module is configured such that the light-emitting elements can be addressed partially independently of each other, such that some may be brought into a switched-on state while others are brought into a switched-off state. A top layer is disposed on the light-emitting module at the light-emitting side. Further comprising a switching material capable of a reversible change in transmittance for the light emitted by changing to a higher transmittance in regions where the top layer situated on light-emitting elements in the switched-on state or to a lower transmittance in regions of the top layer situated in the switched-off state. The invention further refers to methods for producing and operating a lighting device and using a lighting device.

A lighting device comprises a light-emitting module with light-emitting elements, wherein the light-emitting elements are arranged adjacent to each other and are configured to emit light towards a light-emitting side. The light-emitting module is configured such that the light-emitting elements can be addressed partially independently of each other, such that some may be brought into a switched-on state while others are brought into a switched-off state. A top layer is disposed on the light-emitting module at the light-emitting side. Further comprising a switching material capable of a reversible change in transmittance for the light emitted by changing to a higher transmittance in regions where the top layer situated on light-emitting elements in the switched-on state or to a lower transmittance in regions of the top layer situated in the switched-off state. The invention further refers to methods for producing and operating a lighting device and using a lighting device.

The present disclosure is directed toward photonic elements comprising rib-waveguide-based ring resonators having high coupling efficiency between their bus and ring waveguides within the coupling region of the ring resonator, as well as operability over a wide spectral range. Embodiments disclosed herein employ a small-diameter ring waveguide and a bus waveguide that collectively define an asymmetrical coupler having a coupling region at which the optical confinement of the bus waveguide is stronger on side of the bus waveguide distal to the ring waveguide than on the side of the bus waveguide that is proximal to the ring waveguide. In some embodiments, in the coupling region, the bus waveguide has ridge and an inner bus-slab portion that is shared with the ring waveguide, while the outer bus-slab portion is at least partially removed to give rise to stronger optical confinement at the outer edge of the ridge of the bus waveguide.

An optical filter comprising a first distributed Bragg reflector (DBR) layer, a second DBR layer, and an intrinsic semiconductor layer positioned between the first DBR layer and the second DBR layer, with the intrinsic semiconductor layer providing a passband wavelength for the optical filter based on a carrier density of the intrinsic semiconductor layer.

An optical filter comprising a first distributed Bragg reflector (DBR) layer, a second DBR layer, and an intrinsic semiconductor layer positioned between the first DBR layer and the second DBR layer, with the intrinsic semiconductor layer providing a passband wavelength for the optical filter based on a carrier density of the intrinsic semiconductor layer.

Ring modulators based on interdigitated junctions may be driven in full or partial standing wave mode and, active regions (providing the modulation) and light-absorptive regions (e.g. providing electrical conduction) are placed in a pattern inside a resonant cavity in order to match the maxima and minima of the optical field, respectively. The pattern may be periodic to match the periodicity of a typical electromagnetic field which is periodic with the wavelength. It may also be aperiodic in the case that the cross-section or materials are engineered along the direction of propagation such that the propagation constant (and thus wavelength, i.e. optical wave “local periodicity”) change along the propagation direction.