The present disclosure is directed to systems for tuning nanocube plasmonic resonators and methods for forming tunable plasmonic resonators. A tunable plasmonic resonator system can include a substrate and a nanostructure positioned on a surface of the substrate. The substrate can include a semiconductor material having a carrier density distribution. A junction can be formed between the nanostructure and the substrate forming a Schottky junction. Changing the carrier density distribution of the semiconductor material can change a plasmonic response of the plasmonic resonator.

An optical demultiplexer that includes at least one a hybrid phase shifter configured to receive a light signal over a fiber element, the light signal including polarized optical signals. Each phase shifter includes a thermo-optic phase shifter configured to phase shift the light signal, an electro-optic phase shifter configured to phase shift the light signal, and a coupler configured to maintain polarization of the polarized signal components. The optical demultiplexer also includes control circuitry configured to regulate the thermo-optic and electro-optic phase shifters.

An optical demultiplexer that includes at least one a hybrid phase shifter configured to receive a light signal over a fiber element, the light signal including polarized optical signals. Each phase shifter includes a thermo-optic phase shifter configured to phase shift the light signal, an electro-optic phase shifter configured to phase shift the light signal, and a coupler configured to maintain polarization of the polarized signal components. The optical demultiplexer also includes control circuitry configured to regulate the thermo-optic and electro-optic phase shifters.

Provided is a technique for enabling an α parameter to be approximated to zero. A multiple quantum well structure includes a layer structure including a first barrier layer, an intermediate layer, a well layer, and a second barrier layer. The conduction band energies of the first and second barrier layers, the intermediate layer, and the well layer are larger in this order, and the valence band energies of the intermediate layer, the well layer, and the first and second barrier layers are larger in this order.

Provided is a technique for enabling an α parameter to be approximated to zero. A multiple quantum well structure includes a layer structure including a first barrier layer, an intermediate layer, a well layer, and a second barrier layer. The conduction band energies of the first and second barrier layers, the intermediate layer, and the well layer are larger in this order, and the valence band energies of the intermediate layer, the well layer, and the first and second barrier layers are larger in this order.

A method for forming a silicon optical modulator with improved modulation efficiency. the method includes providing a silicon layer in a SOI substrate and forming a waveguide in the silicon layer with a rib structure respectively joining with a first slab region on one side and a second slab region on opposite side with corresponding slab thicknesses smaller than the rib structure. The method additionally includes forming multiple etched sections in each of the first slab region and the second slab regions with decreasing etching depths for sections further away from the rib structure. Furthermore, the method includes forming a PN junction in the rib structure with a moderate P/N doping level. Moreover, the method includes doping the multiple etched sections in the first/second slab region respectively with P-type/N-type impurity at increasing doping levels sequentially for sections further away from the rib structure.

In a system for converting digital data into a modulated optical signal, an electrically controllable device, including a modulator having one or more actuating electrodes, provides an analog-modulated optical signal that is modulated in response to output data bits of a digital-to-digital mapping. A digital-to-digital conversion provides the mapping of input data words to the output data bits. The mapping enables adjustments to correct for non-linearities and other undesirable characteristics, thereby improving signal quality.

The present invention describes a semiconductor interferometric reflecting device capable of modulating the reflected light by modulating the carrier concentration inside a semiconductor device. The variation of the carrier concentration within the device causes the variation of the physical optical properties inside the semiconductor material leading to a shift of the reflected and absorbed light spectrums. The modulating layer is fabricated on an optically smooth substrate, i.e., sufficiently smooth to allow for the occurrence of interference effects. Furthermore, if desired, the same device can be designed to emit or reflect the desired light. The present invention may be utilized for a reflective flat panel display comprising an array of semiconductor interferometric reflecting devices.

The present invention describes a semiconductor interferometric reflecting device capable of modulating the reflected light by modulating the carrier concentration inside a semiconductor device. The variation of the carrier concentration within the device causes the variation of the physical optical properties inside the semiconductor material leading to a shift of the reflected and absorbed light spectrums. The modulating layer is fabricated on an optically smooth substrate, i.e., sufficiently smooth to allow for the occurrence of interference effects. Furthermore, if desired, the same device can be designed to emit or reflect the desired light. The present invention may be utilized for a reflective flat panel display comprising an array of semiconductor interferometric reflecting devices.

A radio-frequency three-dimensional electronic-photonic integrated circuit (RF 3D EPIC) comprises a radio-frequency (RF) photonic integrated circuit (PIC) layer, the RF PIC layer comprising, in a single integrated circuit, at least one RF antenna and at least one photonic device coupling the RF antenna to an optical interface, and further comprises an electronic-photonic integrated circuit (EPIC) assembly optically coupled to the optical interface of the RF PIC layer, the EPIC assembly comprising two or more integrated-circuit dies bonded to one another so as to form a die stack, wherein at least one of the two or more integrated-circuit dies comprises one or more integrated photonic devices and wherein each of the two or more integrated-circuit dies is electrically connected to at least one other integrated-circuit die via an electrically conductive through-wafer interconnect or an electrically conductive through-wafer via.