Patent classifications
G02F1/292
LIDAR WITH PLASMONIC ON-CHIP LIGHT GENERATION
A light detection and ranging system can employ a metal insulator metal tunnel junction positioned atop a substrate. Activation of the metal insulator metal tunnel junction by a signal from a controller can generate light via inelastic scattering. Light to be used to detect downrange targets can be combined from multiple junctions via a multimode interference combiner.
Beam scanning apparatus and optical apparatus including the same
Provided is a beam scanning apparatus including a plurality of antenna resonators disposed two-dimensionally in a row direction and a column direction, a plurality of row voltage lines that are configured to provide a plurality of driving voltages in a row direction, respectively, a plurality of column voltage lines that are configured to provide a plurality of driving voltages in a column direction, respectively, and a driving voltage conversion circuit configured to control a driving voltage applied to each of the plurality of antenna resonators based on a driving voltage in the row direction that is provided from each of the plurality of row voltage lines and a driving voltage in the column direction that is provided from each of the plurality of column voltage lines.
Thermal undercut structure for metasurface tuning
An active metasurface includes a number of periodically-repeated unit cells arranged on a substrate, each of the unit cells including a high-index dielectric block; a heat source positioned to selectively modulate heat applied to the high-index dielectric block; and an insulating undercut region at an interface between the high-index dielectric block and the substrate.
Optical phase shifter device
An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.
DEVICE FOR PROJECTING AN IMAGE INTO THE EYE OF A USER
Device for projecting an image onto an eye, the device comprising a stack comprising light guides, each light guide being coupled to a plurality of diffraction gratings, electrodes, each electrode being associated with a plurality of diffraction gratings of various light guides, each electrode being configured to activate each diffraction grating with which it is associated, a holographic film, the device being characterized in that each light guide extends along a longitudinal axis, in such a way as to form rectilinear segments, two successive rectilinear segments of a given light guide making two different acute angles to the longitudinal axis.
OPTICAL ATTENUATION VIA SWITCHABLE GRATING
Examples are disclosed relating to tunable attenuation of incident light using a switchable grating. One example provides an optical attenuator comprising a switchable grating configured to diffract light within a wavelength band at a diffraction angle. The optical attenuator further comprises an electrode pair configured to apply a voltage across the switchable grating to tune a proportion of incident light diffracted at the diffraction angle, and an optical dump to receive the proportion of incident light diffracted.
Fabry-Perot cavity phase modulator including a tunable core between reflective layers, an optical modulating device including the same, and a LIDAR apparatus including the optical modulating device
Provided are an optical modulating device and a system including the optical modulating device. The optical modulating device includes a substrate, and a phase modulator formed on the substrate and including a Fabry-Perot cavity. The Fabry-Perot cavity of the phase modulator includes a first reflective layer, a second reflective layer, and a tunable core formed between the first reflective layer and the second reflective layer, wherein the tunable core is formed of a semiconductor material and is configured to modulate a phase of light corresponding to modulation of a refractive index of the tunable core according to electrical control.
Spatially addressable nanovoided polymers
Examples include a device including a nanovoided polymer element having a first surface and a second surface, a first plurality of electrodes disposed on the first surface, a second plurality of electrodes disposed on the second surface, and a control circuit configured to apply an electrical potential between one or more of the first plurality of electrodes and one or more of the second plurality of electrodes to induce a physical deformation of the nanovoided polymer element.
Optical phased arrays including member to correct phase error generated in manufacturing processes and method of correcting phase using the same
Provided is an optical phased array including a light injector, a first splitter connected to the light injector, a first phase shifter connected to the first splitter, a plurality of waveguides connected to the first splitter, portions of the plurality of waveguides being connected to the first splitter via the first phase shifter, an antenna array connected to the plurality of waveguides, a single mode filter provided in each of the plurality of waveguides, and a first photodetector connected to the first splitter and configured to detect a portion of light radiated onto the antenna array.
Optical Phase Shifter Device
An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.