A mid-infrared broadband laser including: a femtosecond laser configured to generate a near-infrared light; nonlinear waveguide configured to broaden and/or shift a spectrum of the light from the femtosecond laser; and a nonlinear medium configured to generate a broadband light by mixing spectral components of the output from the non-linear waveguide. Optionally, at least one dispersion compensation element may be placed between the femtosecond laser and the nonlinear waveguide and/or between the nonlinear waveguide and the nonlinear medium.

A nonlinear crystal grating assembly including two integral nonlinear crystal grating structures having inverted crystal axes and having parallel spaced-apart mesas with predetermined mesa widths arranged such that, when assembled in an interdigitated configuration, the mesas of the two grating structures form an alternating grating pattern that is aligned with a propagation direction of input light, thereby creating a periodic structure for quasi-phase-matching (QPM). The nonlinear crystal grating structures are formed using strontium tetraborate, lithium triborate or another nonlinear crystal material. The nonlinear crystal grating assembly is utilized in a laser assembly in which fundamental wavelengths are doubled and/or summed using intermediate frequency conversion stages, and then a final frequency converting stage utilizes the nonlinear crystal grating assembly to double or sum one or more intermediate light beam frequencies to generate laser output light at high power and photon energy levels. A method and inspection system are also described.

In some embodiments, a device for generating mid-infrared radiation is provided. The device may include a thin film quadratic nonlinear waveguide formed on a mid-infrared transparent cladding by a thin film material of a predetermined film thickness, the waveguide having a predetermined etch depth and a predetermined top width. At least one of the predetermined film thickness, the predetermined etch depth, and the predetermined top width may be tuned for the device to generate a coherent idler wave as a mid-infrared radiation from a fixed pump wave and a tunable signal wave.

A spectrally multiplexed quantum repeater (SMuQR) based on spatially arrayed nodes of frequency-multiplexed multi-qubit registers uses the natural inhomogeneous distribution of optical transition frequencies in solid state defect centers. This distribution enables spectrally selective, individual addressing of large numbers of defect centers within an optical diffraction limited spot along a long cavity or waveguide. The spectral selection relies on frequency shifting an incident optical field at a rate as fast as once per defect center lifetime. The defect centers are resonant at visible frequencies and emit visible single photons which are down-converted to a wavelength compatible with long-distance transmission via conventional optical fiber. The down-converted photons are all at the same telecommunications wavelength, with the different spectral bins mapped to different temporal bins to preserve the multiplexing in the time domain, for distribution to other nodes in the quantum network.

A self-seeded optical parametric amplifier (OPA) system includes a cavity mirror, a wavelength conversion unit, and a dichroic filter. The cavity mirror is configured to allow high transmission for an input laser beam and high reflection for a feedback beam. The wavelength conversion unit is configured to convert the input laser beam into a signal laser beam and an idler laser beam. The dichroic filter is configured to allow one of the signal laser beam and the idler laser beam to pass through the dichroic filter and reflect the other one onto a feedback path.

A quantum source includes: a quantum source generator dividing a pump beam into a plurality of channels and generating a plurality of signals and a plurality of idlers using nonlinear crystals respectively located optical paths of the plurality of channels; and an entangled photon pair combiner outputting an enhanced signal by combining the plurality of signals and outputting an enhanced idler by combining the plurality of idlers.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

A laser beam output apparatus includes a pulsed laser output section, an optical path determining section, a wavelength changing section, and a multiplexer. The pulsed laser output section outputs a laser beam having a predetermined wavelength as first pulses. The optical path determining section receives the first pulses and determines one among a plurality of optical paths for each of the first pulses for output. The wavelength changing section receives light beams traveling, respectively, through the plurality of optical paths and changes the light beams to have their respective different wavelengths for output. The multiplexer multiplexes outputs from the wavelength changing section.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is Hz, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), HzTe (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.