A structure for an optoelectronics platform and a method of fabricating a structure for an optoelectronics platform such as a Mach-Zehnder modulator or a waveguide. The method comprises the steps of providing a substrate, and depositing a BaTi03, BTO, film on a surface of the substrate and having a thickness suitable for single mode operation with one or more possible polarization configurations with optical confinement in the BTO film at a wavelength or wavelength range of operation; wherein the substrate is chosen to provide vertical refractive index confinement in a direction perpendicular to the surface of the substrate for the single mode operation optical confinement in the BTO film at the wavelength or wavelength range of operation.

A light modulator includes a base layer, a metal reflective layer formed on the base layer, a modulation layer of a nonlinear optical crystal formed on the reflective layer, and a conductive pattern layer including a plurality of pattern portions arranged periodically in a first direction and each extending in a second direction, and formed on the modulation layer. The modulation layer changes a reflectance for object light by changing a refractive index when a voltage is applied between the reflective layer and the conductive pattern layer. The light modulator outputs the object light being incident from an upper surface side of the modulation layer, transmitted through the modulation layer, and reflected by the reflective layer to the outside as modulated light with an intensity modulated by the reflectance change.

Provided are a wavelength converting particle, a method for manufacturing a wavelength converting particle, and a light-emitting diode containing a wavelength converting particle. The wavelength converting particle comprises a hybrid OIP nanocrystal that converts a wavelength of light generated by an excitation light source into a specified wavelength. Accordingly, it is possible to optically stabilize and improve color purity and light-emission performance without changes in a light-emitting wavelength range.

This invention relates to a device for rapid focus control of one or more lasers. The controlled beam (5), is refracted by the dynamic refraction device (1) whose refractive index is set by its response to the control beam (3). The invention can be used for rapid focus and re-focus of a laser on a target as might be useful in such industries as flat panel television manufacturing, fuel injector nozzle manufacture, laser material processing/machining, laser scanning and indirect drive inertial confinement fusion.

It discloses a system and a method for generating heralded single photons, wherein the system comprises a high-quality optical ring cavity, a PPKTP nonlinear crystal, a polarization beam splitter, a dichroic mirror, a light filtering device, a reflector module, an atomic vapor cell and a single photon detector, wherein: the high-quality optical ring cavity is formed by a first plano-concave reflector, a second plano-concave reflector, a third plano-concave reflector and a fourth plano-concave reflector; the PPKTP nonlinear crystal and the polarization beam splitter are positioned in an optical path between the first plano-concave reflector and the second plano-concave reflector; the dichroic mirror is positioned in an optical path behind a reflecting end of the polarization beam splitter.

A method and a system for generating intense, ultrashort pulses of XUV and soft X-ray radiation via high-order harmonic generation (HHG), the method comprising selecting a nonlinear solid target and a laser source; separating a beam from the laser source into a first laser beam and a second laser beam; focusing the first laser beam onto the nonlinear solid target, thereby generating a laser ablated plume; and compressing and frequency-doubling the second laser beam and directing a resulting second compressed and frequency-doubled laser beam to the laser ablated plume, thereby yielding high-order harmonic generation of radiation of photon energies in a range between 12 eV and 36 eV. A high-order harmonic source of radiation, comprising a nonlinear solid target; a laser source; a beam splitter separating a beam from the laser source into a first beam line and a second beam line; the first beam line comprising a first focusing unit directing a first, uncompressed, laser beam onto the nonlinear solid target, to generate a laser ablated plume; and the second beam line directing a second, compressed and frequency-doubled laser beam, to the laser ablated plume, yielding high-order harmonic generation of radiation of photon energies in a range between 12 eV and 36 eV.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

Disclosed is an apparatus for single-pixel imaging using quantum light, the apparatus including: a light source which generates a photon pair through spontaneously parametric down conversion of a non-linear crystal and splits the photon pair into an idler photon of first polarized light and a signal photon of second polarized light; a signal processing unit which aligns the signal photon with the first polarized light and modulates the signal photon with a pattern of a spatial light modulator, and sends the modulated signal photon to a target; and a signal detecting unit which simultaneously measures signal photons collected after an interaction of the idler photon and the target to obtain an image.

An amorphous layer is used as a protective coating for hygroscopic nonlinear optical crystals. The amorphous layer consists of one or more alkali metal borates and/or alkali earth metal borates. The amorphous layer slows or prevents water and/or oxygen from diffusing into the hygroscopic nonlinear optical crystal, thus simplifying handling, storage and operating environmental requirements. One or multiple additional coating layers may be placed on top of the amorphous layer, with the additional coating layers including conventional optical materials. The thicknesses of the amorphous layer and/or additional layers may be chosen to reduce reflectance of the optical component at one or more specific wavelengths. The coated nonlinear optical crystal is used in an illumination source utilized in a semiconductor inspection system, a metrology system, or a lithography system.

A device for generating individual photons with energy E includes quantum emitters, having at least one determined transition with the energy E from an energy level N* to a lower energy level N1. The emitters are near a propagation path running from first to second regions. The device also includes at least one light source to output light, for propagation along the path. The light has the energy E for resonant excitation of the energy level N*. The emitters are arranged so that optionally exactly Z emitters are illuminated, forming an optical thickness τ>0 for the light along the path. The number Z lies in a range of ZO±10% and ZO is a number at which a maximum destructive interference in the second region occurs between a two-photon component of the light scattered on the ZO emitters and a two-photon component of the non-scattered light.