A silicon optical modulator with improved bandwidth includes a silicon waveguide with a rib structure in cross section connected to a first slab region and a second slab region respectively on two opposite sides of the rib structure. The silicon optical modulator further includes a PN junction formed in the rib structure with a P-type part joined with the first slab region and a N-type part joined with the second slab region. Additionally, the silicon optical modulator includes multiple P-type doped sections formed one next to another in the first slab region ended with a first end region and multiple N-type doped sections one next to another formed in the second slab region ended with a second end region. The multiple P-type or N-type doped sections are configured with increasing doping levels for sections further away from the rib structure.

An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 μm away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.

A method of forming semiconductor device includes forming an active layer in a substrate including forming components of one or more transistors; forming an MD and gate (MDG) layer over the active layer including forming a gate line; forming a metal-to-S/D (MD) contact structure; and forming a waveguide between the gate line and the MD contact structure; forming a first interconnection layer over the MDG layer including forming a first via contact structure over the gate line; forming a second via contact structure over the MD contact structure; and forming a heater between the first and second via contact structures and over the waveguide.

A self-lit display panel includes a photonic integrated circuit payer including an array of waveguides and an array of out-couplers for out-coupling portions of the illuminating light through pixels of the panel. The self-lit display panel may include a transparent electronic circuitry layer backlit by the photonic integrated circuit layer; the two layers may be on a same substrate or on opposed substrates defining a cell filled with an electro-active material. The configuration allows for chief ray engineering, zonal illuminating, and separate illumination with red, green, and blue illuminating light.

An optical device is described. The optical device includes a waveguide, a first engineered electrode, and a second engineered electrode. The waveguide includes at optical material(s) having an electro-optic effect. The optical material(s) include lithium. A portion of the waveguide has a waveguide width. The first engineered electrode includes a first channel region and first extensions protruding from the first channel region. The first extensions are closer to the portion of the waveguide than the first channel region is. The second engineered electrode includes a second channel region and second extensions protruding from the second channel region. The second extensions are closer to the portion of the waveguide than the second channel region is. A first extension of the first extensions is a distance from a second extension of the second \extensions. The distance is less than the waveguide width.

1An optical device includes a substrate, a dielectric substance that is laminated on the substrate, an optical waveguide that is surrounded by the dielectric substance, and a heater electrode that is disposed on the optical waveguide and that is surrounded by the dielectric substance. The optical waveguide is a rib type optical waveguide that includes a slab and a rib on the slab, that is located below the heater electrode, and that has a structure in which a width of the slab is less than or equal to 11 times a width of the rib.

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, a first dielectric layer, a second dielectric layer, a light modulator, a heater, and a first conductive contact. The first dielectric layer is disposed on the semiconductor substrate. The second dielectric layer is disposed on the first dielectric layer. The light modulator is disposed in the first dielectric layer. The heater is disposed in the second dielectric layer and above the light modulator. The first conductive contact is electrically connected to the light modulator. A top surface of the heater is coplanar with a top surface of the first conductive contact.

Methods of fabricating electro-optical modulators and the resulting electro-optical modulators are described herein. In some embodiments, a method comprises defining a waveguide having a core region, implanting dopants into a contact region of the waveguide, and diffusing the dopants laterally toward the core region. In some embodiments, a method comprises implanting n-type and p-type dopants into respective first and second contact regions of the optical waveguide and annealing the optical waveguide to induce lateral diffusion of the n-type and p-type dopants toward a center of the optical waveguide. In some embodiments, an electro-optical modulator comprises a waveguide comprising a contact region and a core region, and the waveguide has a dopant concentration that decreases from the contact region to the core region according to a super-linear curve. Methods and resulting structures described herein provide desirable electrical resistance and low overlap between dopants and optical signals.

Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.