A planar electro-optic Mach-Zehnder modulator (MZM) includes two optical waveguide arms and three drive electrodes extending along the optical waveguide arms to modulate light propagating therein. A middle one of the drive electrodes is between the two optical waveguide arms, and the two optical waveguide arms are between outer ones of the drive electrodes. An electrical drive circuit is connected to provide first modulation signals to the two outer ones of the drive electrodes and a second modulation signal to the middle one of the drive electrodes, wherein the second modulation signal is voltage-inverted relative to the first modulation signals.

An apparatus for modulating a beam of light with balanced push-pull mechanism. The apparatus includes a first waveguide comprising a first PN junction on a substrate and a second waveguide comprising a second PN junction on the silicon-on-insulator substrate. The second PN junction is a replica of the first PN junction shifted with a distance. The apparatus further includes a first source electrode and a first ground electrode coupled respectively with the first PN junction and a second source electrode and a second ground electrode coupled respectively with the second PN junction. The apparatus additionally includes a third ground electrode disposed near the second PN junction at the distance away from the second ground electrode, wherein the first ground electrode, the second ground electrode, and the third ground electrode are commonly grounded to have both PN junctions subjected to a substantially same electric field varied in ground-source-ground pattern.

A III-V/Si hybrid MOS optical modulator with a traveling-wave electrode for high-efficiency and high-bandwidth optical modulation is disclosed. The III-V/Si hybrid MOS optical modulator equipped with a traveling-wave electrode becomes a traveling-wave modulator. The traveling-wave modulator comprises a III-V compound semiconductor layer, a silicon layer and an oxide layer between the III-V compound semiconductor layer and the silicon layer. The traveling-wave modulator comprises of at least one first metallic layer, at least one second metallic layer and a semiconductor layer. The electrode trace width of each second metallic layer and the spacing between adjacent second metallic layers are adjusted to achieve the impedance and velocity matching. A traveling-wave electrode is designed to integrate with the III-V/Si hybrid MOS optical modulator under forward and reverse bias.

Enhanced push pull driving waveforms for driving a four particle electrophoretic medium including four different types of particles, for example a set of scattering particles and three sets of subtractive particles. Methods for identifying a preferred waveform for a target color state when using a voltage driver having at least five different voltage levels.

An apparatus for modulating a beam of light with balanced push-pull mechanism. The apparatus includes a first waveguide comprising a first PN junction on a silicon-on-insulator substrate and a second waveguide comprising a second PN junction on the silicon-on-insulator substrate. The second PN junction is a replica of the first PN junction shifted with a distance. The apparatus further includes a first source electrode and a first ground electrode coupled respectively with the first PN junction and a second source electrode and a second ground electrode coupled respectively with the second PN junction. The apparatus additionally includes a third ground electrode disposed near the second PN junction at the distance away from the second ground electrode, wherein the first ground electrode, the second ground electrode, and the third ground electrode are commonly grounded to have both PN junctions subjected to a substantially same electric field varied in ground-source-ground pattern.

An apparatus for modulating a beam of light with balanced push-pull mechanism. The apparatus includes a first waveguide comprising a first PN junction on a silicon-on-insulator substrate and a second waveguide comprising a second PN junction on the silicon-on-insulator substrate. The second PN junction is a replica of the first PN junction shifted with a distance. The apparatus further includes a first source electrode and a first ground electrode coupled respectively with the first PN junction and a second source electrode and a second ground electrode coupled respectively with the second PN junction. The apparatus additionally includes a third ground electrode disposed near the second PN junction at the distance away from the second ground electrode, wherein the first ground electrode, the second ground electrode, and the third ground electrode are commonly grounded to have both PN junctions subjected to a substantially same electric field varied in ground-source-ground pattern.

A photonic device for amplitude modulation of an optical signal, in which a source of the optical signal is coupled to an input waveguide separating through an optical splitter into two arms which recombine through an optical combiner in an output waveguide, wherein the arms are phase shifted by /2 and each include an electro-optical amplitude modulator. The device may be adapted to modulate a wavelength multiplexed signal.

A push-pull device (10) comprises: a first waveguide (W1) arranged between its first and second electrode (S11, S12) and a second waveguide (W2) arranged between its first and a second electrode (S21, S22). Electrically conductive structures (T11, T12, T21, T22) extend away from one or more of the electrodes (S11, S12, S21, S22) for electrically connecting at least two of the electrodes (S11, S12, S21, S22). The waveguides (W1, W2) and the electrodes (S11, S12, S21, S22) originate from a pre-fabrication process. The waveguides (W1, W2) are poled by a poling (P) originating from a poling process. The electrically conductive structures (T11, T12, T21, T22) originating: from the pre-fabrication process, wherein one or more of the electrically conductive structures (T11, T12, T21, T22) extend to one or more electrically non-conductive gaps (G1, G2), and wherein the device (10) further comprises one or more electrically conductive elements (C1, C2) for electrically connecting two of the electrodes (S11, S12, S21, S22), the electrically conductive elements (C1, C2) being related to the electrically non-conductive gaps (G1, G2) and originating from a post-fabrication process; and/or from a post-fabrication process.

An electro-optic modulation structure comprises a first electrode and a second electrode and a first electro-optic strip; wherein the first electrode has a slab portion and a first ridge protruding from the slab portion of the first electrode, and the second electrode has a slab portion and a first ridge protruding from the slab portion of the second electrode, the first protruding ridge of the first electrode and the first protruding ridge of the second electrode being disposed on opposite sides of the first electro-optic strip and both protruding ridges abut the first electro-optic strip.

A dual-ring-modulated laser includes a gain medium having a reflective end coupled to a gain-medium reflector and an output end coupled to a reflector circuit to form a lasing cavity. This reflector circuit comprises: a first ring modulator; a second ring modulator; and a shared waveguide that optically couples the first and second ring modulators. The first and second ring modulators have resonance peaks, which are tuned to have an alignment separation from each other. During operation, the first and second ring modulators are driven in opposing directions based on the same electrical input signal, so the resonance peaks of the first and second ring modulators shift wavelengths in the opposing directions during modulation. The modulation shift for each of the resonance peaks equals the alignment separation, so the resonance peaks interchange positions during modulation to cancel out reflectivity changes in the lasing cavity caused by the modulation.