An optical modulator includes: a substrate; a waveguide layer including first and second optical waveguides formed of an electro-optic material film on the substrate to have a ridge shape and to be disposed adjacent to each other; an RF part that applies a modulated signal to the optical waveguides; and a DC part that applies a DC bias to the optical waveguides. The DC part includes: a buffer layer covering at least upper surfaces of the optical waveguides; a first bias electrode opposed to the first optical waveguide through the buffer layer; and a second bias electrode provided adjacent to the first bias electrode. A first DC bias voltage is applied between the first and second bias electrodes. A waveguide layer removal area in which at least part of the waveguide layer is removed is provided at least under an area between the first and second bias electrodes.

An optical modulator is provided with a substrate, first and second optical waveguides each formed of a ridge-shaped electro-optic material film and disposed so as to be mutually adjacent on the substrate, a buffer layer covering upper surfaces of the first and second optical waveguides, first and second signal electrodes provided above the buffer layer so as to be opposed respectively to the first and second optical waveguides, and a dielectric layer covering at least one of a part of an exposed surface of the first signal electrode and a part of an exposed surface of the second signal electrode, and a part of an upper surface of the buffer layer. Differential signals are applied to the first and second signal electrodes.

An optical modulator includes: a bottom substrate layer, having a first surface; a traveling-wave electrode, being disposed on the first surface of the bottom substrate layer and including a plurality of ground electrodes and a plurality of signal electrodes between the ground electrode; an optical waveguide disposed inside the bottom substrate layer; and a shield layer, including a substrate and a metal layer, the substrate covering at least a portion of the traveling-wave electrode and the metal layer being disposed on the surface of the substrate facing away from the traveling-wave electrode. Each of the ground electrodes is electrically connected to the metal layer to provide electromagnetic shielding for the signal electrodes between the ground electrodes.

A semiconductor optical modulator includes a modulation region and a non-modulation region. A first width of a first ground electrode in the non-modulation region is larger than a second width of the first ground electrode in the modulation region. A third width of a second ground electrode in the non-modulation region is larger than a fourth width of the second ground electrode in the modulation region. In the non-modulation region, a first insulating layer is disposed between a first optical waveguide and a first traveling wave electrode and between a second optical waveguide and a second traveling wave electrode. For this reason, a bandwidth of the semiconductor optical modulator can be widened.

A distributed traveling-wave Mach-Zehnder modulator driver having a plurality of modulation stages that operate cooperatively (in-phase) to provide a signal suitable for use in a 100 Gb/s optical fiber transmitter at power levels that are compatible with conventional semiconductor devices and conventional semiconductor processing is described.

An optical modulator includes: a bottom substrate layer, having a first surface; a traveling-wave electrode, being disposed on the first surface of the bottom substrate layer and including a plurality of ground electrodes and a plurality of signal electrodes between the ground electrode; an optical waveguide disposed inside the bottom substrate layer; and a shield layer, including a substrate and a metal layer, the substrate covering at least a portion of the traveling-wave electrode and the metal layer being disposed on the surface of the substrate facing away from the traveling-wave electrode. Each of the ground electrodes is electrically connected to the metal layer to provide electromagnetic shielding for the signal electrodes between the ground electrodes.

A distributed traveling-wave Mach-Zehnder modulator driver having a plurality of modulation stages that operate cooperatively (in-phase) to provide a signal suitable for use in a 100 Gb/s optical fiber transmitter at power levels that are compatible with conventional semiconductor devices and conventional semiconductor processing is described.

Performance improvement of an all-optical analog-to-digital converter (AOADC) addresses both RF and optical modeling of a leaky waveguide based optical spatial light modulator (SLM) using electro-optic (E-O) material. The E-O polymer provides improved sensitivity for SLM and achieves a broader bandwidth due to better velocity matching between RF and optical waves.

The present invention discloses a GSG track-type radio-frequency electrode, a silicon-based traveling-wave electrode light modulator, and a preparation method, and relates to the field of high-speed electro-optical chips. The GSG track-type radio-frequency electrode includes a GSG-type planar electrode, where a track electrode used for delaying an electric field is periodically added to one side or dual sides of the GSG-type planar electrode, and the track electrode is connected to a ground electrode of the GSG-type planar electrode. The silicon-based traveling-wave electrode light modulator includes the GSG track-type radio-frequency electrode and a conventional silicon-based traveling-wave electrode light modulator, and the GSG track-type radio-frequency electrode is connected to an active region of the silicon-based traveling-wave electrode light modulator by using through holes between electrode layers. The present invention can improve parameter design freedom of an electrode and realize effective signal parameter matching.

A distributed traveling-wave Mach-Zehnder modulator driver having a plurality of modulation stages that operate cooperatively (in-phase) to provide a signal suitable for use in a 100 Gb/s optical fiber transmitter at power levels that are compatible with conventional semiconductor devices and conventional semiconductor processing is described.