Processing methods may be performed to form a grounded mirror structure on a semiconductor substrate. The methods may include revealing a metal layer. The metal layer may underlie a spacer layer. The metal layer may be revealed by a dry etch process. The method may include forming a mirror layer overlying the spacer layer and the metal layer. The mirror layer may contact the metal layer. The method may also include forming an oxide inclusion overlying a portion of the mirror layer. The portion of the mirror layer may be external to the spacer layer.

An electro-holographic light field generator device is disclosed. The light field generator device has an optical substrate with a waveguide face and an exit face. One or more surface acoustic wave (SAW) optical modulator devices are included within each light field generator device. The SAW devices each include a light input, a waveguide, and a SAW transducer, all configured for guided mode confinement of input light within the waveguide. A leaky mode deflection of a portion of the waveguided light, or diffractive light, impinges upon the exit face. Multiple output optics at the exit face are configured for developing from each of the output optics a radiated exit light from the diffracted light for at least one of the waveguides. An RF controller is configured to control the SAW devices to develop the radiated exit light as a three-dimensional output light field with horizontal parallax and compatible with observer vertical motion.

A light projection apparatus is provided comprising: a source of light; a switchable grating on a first substrate; and a diffractive optical element. Light is diffracted at least once by the switchable grating and is diffracted at least once by the DOE.

A waveguide apparatus comprises in combination: a light pipe with an optical axis for guiding light therethrough; a light coupling element in optical contact with an elongate portion of the reflecting surface of the light guide; and an optical waveguide in optical contact with the coupling element.

A Pancharatnam Berry Phase (PBP) color corrected structure is presented that comprises a plurality of switchable gratings and a plurality of PBP active elements. Each switchable grating has an inactive mode when reflects light of a specific color channel, of a set of color channels, and transmits light of other color channels in the set of color channels, wherein the specific color channel is different for each of the plurality of switchable gratings, and to have an active mode to transmit light that is inclusive of the set of color channels. The PBP active elements receive light output from at least one of the plurality of switchable gratings. Each of the PBP active elements is configured to adjust light of a different color channel of the set of color channels by a same amount to output light corrected for chromatic aberration for the set of color channels.

The present invention provides a display device, including: a first chromatic light source configured to generate first chromatic light, a dichroic reflection layer disposed on a light emergent side of the first chromatic light source and allowing the first chromatic light to pass through, and a quantum dot layer. The dichroic reflection layer has a first surface facing away from the first chromatic light source, and the first surface has a plurality of recessed portions. The quantum dot layer includes a plurality of quantum dot blocks, and the quantum dot blocks are disposed corresponding to the recessed portions.

A light projection apparatus is provided comprising: a source of light; a switchable grating on a first substrate; and a diffractive optical element. Light is diffracted at least once by the switchable grating and is diffracted at least once by the DOE.

The present disclosure provides a liquid crystal display panel, including a color filter substrate, an array substrate disposed opposite to the color filter substrate, and a liquid crystal layer disposed between the color filter substrate and the array substrate. The array substrate includes a base substrate, a thin film transistor disposed on the base substrate, a pixel electrode, and a distributed Bragg reflective film disposed on the pixel electrode. The thin film transistor includes a source electrode and drain electrode. The drain electrode includes an extension part. The pixel electrode is disposed on the extension part of the drain electrode and electrically connected with the drain electrode.

A waveguide apparatus has in combination: a light pipe with an optical axis for guiding light therethrough; a light coupling element in optical contact with an elongate portion of the reflecting surface of the light guide; and an optical waveguide in optical contact with the coupling element.

A display apparatus including a frame, light emitting diode chips separated from each other and regularly arranged in a matrix on the frame, an optical part including a display panel and at least one of a phosphor sheet and an optical sheet, a light guide plate disposed between the frame and the optical part to cover the light emitting diode chips, at least one reflector disposed between the frame and the light guide plate to reflect at least part of light emitted from the light emitting diode chip to direct at least part of light emitted therefrom to the light guide plate, and a first-type electrode and a second-type electrode, in which at least one of the light emitting diode chips is a flip-chip type and includes a first-type semiconductor layer electrically connected to the first-type electrode and a second-type semiconductor layer electrically connected to the second-type electrode.