Provided a light modulating device including a variable mirror including a plurality of lattice structures, the plurality of lattice structures including a material having a refractive index that changes based on a temperature of the material, a distributed Bragg mirror spaced apart from the variable mirror and provided above the variable mirror, the distributed Bragg mirror including a first material layer and a second material layer that are alternately stacked, and a refractive index of the first material layer being different from a refractive index of the second material layer, and a heating portion configured to heat the plurality of lattice structures and provided below the variable mirror opposite to the distributed Bragg mirror.

A light modulator for amplifying an intensity of incident light and modulating a phase of the incident light is provided. The light modulator includes: a first distributed Bragg reflector (DBR) layer having a first reflectivity and comprising at least two first refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; a second DBR layer having a second reflectivity and comprising at least two second refractive index layers that have different refractive indices from each other and are repeatedly alternately stacked; and an active layer disposed between the first DBR layer and the second DBR layer, and comprising a quantum well structure.

Provided are optical modulators and devices including the optical modulators. The optical modulator may include an optical modulation layer that includes a phase change material. A first electrode may be provided on a first surface of the optical modulation layer. A second electrode may be provided on a second surface of the optical modulation layer. A first phase controlling layer may be provided, the first electrode being disposed between the first phase controlling layer and the optical modulation layer. A second phase controlling layer may be provided, the second electrode being disposed between the second phase controlling layer and the optical modulation layer. Each of the first and the second phase controlling layers may have an optical thickness corresponding to an odd multiple of /4, where is a wavelength of incident light to be modulated by the optical modulator. The optical modulator may further include at least one reflective layer. The optical modulation layer may have a thickness of about 10 nm or less. An operating voltage of the optical modulator may be about 10 V or less.

A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.

A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.

A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.

Thin multilayer reflectors are described. In particular, thin multilayer reflectors that partially transmit blue light and reflect green and red light are described. The thin multilayer reflectors have a uniform left bandedge across each dimension of the film, wherein the location of the left bandedge varies in a range of no more than 10% of the average left bandedge across that dimension.

Provided is a tunable electro-optic filter including a reflective structure including a first reflective layer including a first pattern layer having a first meta-surface structure disposed on a first side of the liquid crystal layer and a second reflective layer including a second pattern layer having a second meta-surface structure disposed on a second side of the liquid crystal layer. Each of the first meta-surface structure and the second meta-surface structure includes multiple dielectric materials which are alternately stacked, and a thickness of each dielectric material gradually increases. Alternately, the tunable electro-optic filter may include a pattern layer having a meta-surface structure disposed on at least a side of the liquid crystal layer.

A semiconductor laser source including a Mach-Zehnder interferometer including first and second arms. Each of these arms being divided into a plurality of consecutive sections. The first and second arms each include a gain-generating section forming first and second gain-generating waveguides, respectively. The laser source includes power sources able to deliver currents through the gain-generating waveguides such that the following condition is met:

[00001]$\underset{n=1}{\overset{N_2}{.Math.}}.Math.L_{2,n}.Math.{\mathrm{neff}}_{2,n}-\underset{n=1}{\overset{N_1}{.Math.}}.Math.L_{1,n}.Math.{\mathrm{neff}}_{1,n}=k_f.Math.{}_{\mathrm{Si}}$

where: k.sub.f is a preset integer number higher than or equal to 1, N.sub.1 and N.sub.2 are the numbers of sections in the first and second arms, respectively, L.sub.1,n and L.sub.2,n are the lengths of the nth sections of the first and second arms, respectively, neff.sub.1,n and neff.sub.2,n are the effective indices of the nth sections of the first and second arms, respectively.

A method to configure an optical device. The method may rely on an optical device that includes two parallel mirrors extending, each, parallel to a reference plane, and an active material extending between the mirrors. An average plane of the active material is parallel to said reference plane, so as to form an optical resonator. The active material is energized so as to non-volatilely alter a refractive index and/or an optical absorption in one or more regions of said material. This results in forming one or more cavities, respectively, in which light can be laterally confined, in-plane with said average plane, in addition to being confined between the mirrors, along a direction perpendicular to said reference plane. Each of the one or more cavities has an altered mode profile compared to a non-altered region of the active material. Related methods and optical devices are also disclosed.