A thin film transistor substrate according to an embodiment includes: a substrate; and a thin film transistor disposed on the substrate, wherein the thin film transistor includes a channel layer including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode.

An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

The present application discloses a reflective display panel, a driving method thereof, a control method of a pixel unit and a reflective display device. The reflective display panel comprises: a base substrate, a reflective layer, first and second electrode layers, wherein the first electrode layer is on a side of the reflective layer distal to the base substrate, the second electrode layer is on a side of the first electrode layer distal to the base substrate and insulated from the first electrode layer, materials of the first and second electrode layers are each an electro-optic material, and orthogonal projections of the second and first electrode layers on the base substrate have overlapping areas corresponding to the pixel units.

The present invention relates inter alia to a color display comprising nanoparticles and color filters.

An optical modulator includes a p-type first semiconductor layer (102) formed on a clad layer (101), an insulating layer (103) formed on the first semiconductor layer (102), and an n-type second semiconductor layer (104) formed on the insulating layer (103). The first semiconductor layer (102) is made of silicon or silicon-germanium, and the second semiconductor layer (104) is formed from a III-V compound semiconductor made of three or more materials.

An optical device including a plurality of electrodes, an electro-optic component, an optical grating, and a buried back reflector is described. The electro-optic component includes at least one optical material exhibiting an electro-optic effect. The optical grating is optically coupled with the electro-optic component. In some embodiments, the optical grating includes a vertical optical grating coupler. The buried back reflector is optically coupled with the optical grating. The buried back reflector is configured to increase a coupling efficiency of the optical grating to an out-of-plane optical mode and configured to reduce a performance perturbation to the plurality of electrodes. The buried back reflector may include a metal layer having a thickness of at least thirty nanometers and not more than five hundred nanometers.

The invention relates to an optoelectronic device for generating a frequency comb comprising a laser source (2), a ring microresonator (3) comprising a resonant ring (20) made of a third order optically non-linear material with abnormal dispersion regime. It also comprises a spectral tuning device comprising a junction guide (30) coupled to the resonant ring, electrical biasing means (40) adapted to apply an electrical voltage to the junction, and a control unit (42) adapted to modify the value of the electrical voltage until at least one dissipative temporal soliton is formed in the resonant ring.

A solid state optical beam steering device and method of operation includes converting a frequency or wavelength of a signal in a non-linear converter associated with one channel just before launch. A second channel has a similar constructions and operation. A processor compares the phase difference between the two channels and uses the difference to horizontally steer a beam without moving mechanical parts. This establishes the solid-state nature of the present disclosure. The non-linear converter may be a quasi-phase matched non-linear converter with alternating crystal domains.

A method of manufacturing an electro-optically active device. The method comprising the steps of: etching a cavity on a silicon-on-insulator wafer; providing a sacrificial layer adjacent to a substrate of a lll-V semiconductor wafer; epitaxially growing an electro-optically active structure on the lll-V semiconductor wafer; etching the epitaxially grown optically active structure into an electro-optically active mesa; disposing the electro-optically active mesa in the cavity of the silicon-on-insulator wafer and bonding a surface of the electro-optically active mesa, which is distal to the sacrificial layer, to a bed of the cavity; and removing the sacrificial layer between the substrate of the lll-V semiconductor wafer and the electro-optically active mesa.

The optical response of a metasurface is controlled by actuating it via an electrical or magnetic field, temperature control, optical pumping or electromechanical actuation. The metasurface will therefore control the polarization of the incident light. The metasurface comprises an array of patch antennas. The patch antennas are in the form of asymmetrical elements, including rotated rods, cross-shapes, V-shapes, and L-shapes.