A device comprising a metal layer on a crystalline silicon substrate, and a waveguide that has a refractive index greater than that of the crystalline silicon, wherein the waveguide is arranged to couple light to a surface plasmon mode at an interface between the silicon substrate and the metal layer when a waveguide mode is phase matched to the surface plasmon mode.

[Summary] [Problem] A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. [Solving Means] By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.

A waveguide structure includes a substrate, a waveguide core coupled to the substrate and including a first material characterized by a first index of refraction, and an isotope-enhanced cladding layer at least partially surrounding the waveguide core and including a second material characterized by a second index of refraction less than the first index of refraction and an isotope-enhanced Pockels effect.

This photonic transmitter includes a layer made of dielectric material, a sublayer made of doped III-V crystalline material extending directly over the layer made of dielectric material, a laser source including the sublayer made of doped III-V crystalline material, a modulator including a waveguide formed by proximal ends facing first and second electrodes and that segment of the layer made of dielectric material which is interposed between these proximal ends, and a zone composed only of one or more solid dielectric materials, which extends from a distal end of the second electrode to a substrate, and under the entirety of the distal end of the second electrode.

The present invention relates to an optical device package in which a deterioration in performance of an optical device is suppressed which deterioration may be caused by dust on a light path. An optical device package (10) including a case (13, 14) in which an optical device (11) is sealed includes a lid (13) having an optical window (13a) which transmits light, and the optical device (11) is connected to the lid (13) such that at least part of an effective region (Ae) of the optical device (11) overlaps with the optical window (13a).

A ring resonator optical modulator comprises: an optical region in which optical radiation can propagate in a circular path having an inner radius and an outer radius coincident with an outer perimeter of the ring resonator optical modulator; a MOS capacitor structure having an upper gate device layer and a lower body device layer, and an insulating material being disposed between the upper gate device layer and the lower body device layer; and a cladding region. The optical radiation is confined within the optical region. The insulating material has a first region disposed in the optical region having a first thickness and a second region having a second thickness greater than the first thickness, the second region being disposed radially inwardly from the inner radius of the optical region, such that the optical radiation is radially confined toward the outer side of the inner radius of the optical region.

The invention discloses a fabrication process variation analysis method of a silicon-based Mach-Zehnder electro-optic modulator. The method includes the following steps: (1) use the input reflection coefficient S.sub.11 to characterize and quantify the reflection deviation characteristics of the driving signal on the traveling wave electrode; (2) measure and quantify the modulated signal characteristics of the silicon Mach-Zehnder electro-optic modulator. The modulated signal characteristics include transmission characteristics, vertical direction characteristics and horizontal direction characteristics; (3) Pearson correlation coefficient and partial correlation coefficient are introduced. By analyzing the value and variation trend of Pearson correlation coefficient and partial correlation coefficient, the relationship between the deviation of the driving signal reflection and the deviation of the modulated signal characteristics is analyzed. The method of the present invention can establish the relationship between fabrication process control and performance analysis at the device level, and help to develop device designs with better fabrication tolerances.

A digital-to-analog converter has a first interface coupled to a second interface through one or more modulation circuits. The circuits include a first coupler connected to the first interface; a first waveguide with a first lead connected to the first coupler, a first end, and a first length running therebetween. The first lead and the first end are coupled by a first switch. The circuits also include: a second coupler connected to the first interface; a second waveguide having a second lead connected to the second coupler, a second end, and a second length running therebetween, the second lead and the second end coupled by a second switch along the second length; and an optical combiner connected to the ends of the waveguides. The second interface is connected to the optical combiner of the modulation circuits. Output from the second interface is an optical signal capable of carrying binary information.

A method for manufacturing a thermo-optic component comprises the following steps: a) providing a silicon-on-insulator (SOI) substrate comprising: a surface layer made of single-crystal silicon, extending in a main plane and placed on a dielectric layer, itself placed on a carrier made of silicon, and at least one buried cavity, which is formed in the carrier and which opens under the dielectric layer, b) forming an optical waveguide extending in the main plane and comprising a core formed in the surface layer and encircled by an optical confinement layer including the dielectric layer, c) producing at least one heating element, on the optical waveguide, the heating element being positioned, in the main plane, plumb with a segment of the optical waveguide, or on either side of the segment, the heating element and the segment of the optical waveguide being located plumb with the at least one recessed buried cavity.

An optical modulator includes a waveguide core; a first transition zone located between a first side of the waveguide core and a first electrical contact region; and a second transition zone located between a second side of the waveguide core and a second electrical contact region, wherein one or more of the first transition zone and second transition zone has a variable thickness. The variable thickness is confined to the one or more of the first transition zone and second transition zone. The variable thickness removes a portion of the highly doped first transition zone and the highly doped second transition zone thereby reducing contact resistance.