Photonic transmitter, comprising: a stack of a first layer, second layer and third layer stacked on top of one another, a laser source comprising a first waveguide and a second waveguide. The stack comprises: a fourth layer located on the third layer, the thickness of this fourth layer being comprised between 40 nm and 1 μm in order to obtain adiabatic coupling between the first and second waveguides, and a fifth layer located directly on the fourth layer, the second waveguide being entirely structured in a III-V gain medium of this fifth layer. The first waveguide comprises a first portion made of semiconductor located inside the third layer and that extends as far as to the interface between the third and fourth layers.

A ring resonator optical modulator comprises: an optical region in which optical radiation can propagate in a circular path having an inner radius and an outer radius coincident with an outer perimeter of the ring resonator optical modulator; a MOS capacitor structure having an upper gate device layer and a lower body device layer, and an insulating material being disposed between the upper gate device layer and the lower body device layer; and a cladding region. The optical radiation is confined within the optical region. The insulating material has a first region disposed in the optical region having a first thickness and a second region having a second thickness greater than the first thickness, the second region being disposed radially inwardly from the inner radius of the optical region, such that the optical radiation is radially confined toward the outer side of the inner radius of the optical region.

A digital-to-analog converter has a first interface coupled to a second interface through one or more modulation circuits. The circuits include a first coupler connected to the first interface; a first waveguide with a first lead connected to the first coupler, a first end, and a first length running therebetween. The first lead and the first end are coupled by a first switch. The circuits also include: a second coupler connected to the first interface; a second waveguide having a second lead connected to the second coupler, a second end, and a second length running therebetween, the second lead and the second end coupled by a second switch along the second length; and an optical combiner connected to the ends of the waveguides. The second interface is connected to the optical combiner of the modulation circuits. Output from the second interface is an optical signal capable of carrying binary information.

A semiconductor device includes a first insulating layer, an optical modulator, and a multilayer wiring layer. The optical modulator is formed on the first insulating layer. The multilayer wiring layer is formed on the first insulating layer and including a wiring and a resistive element which are spaced apart from each other. The resistive element is formed without overlapping with the optical modulator in plan view. A material of the resistive element is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium.

An optical modulator includes a substrate, a first dielectric layer over the substrate, a rib waveguide including a PN junction on the first dielectric, a second dielectric layer over the rib waveguide and a stressor layer including a metal, where the first or the second dielectric is between the stressor layer and the PN junction.

A monolithically integrated optical analog-to-digital conversion system based on a lithium niobate-silicon wafer, and a method for manufacturing the same, wherein a novel wafer (lithium niobate-silicon wafer) is used to implement the monolithically integrated optical analog-to-digital conversion system having multiple photonic devices, including an electro-optical modulator array, a tunable delay line array, an electronic circuit, and the like. As a result, multiple devices are manufactured on one chip, and the performance advantages and the stability of the system are guaranteed. Moreover, the present invention provides a CMOS-compatible method for manufacturing the system, so that the monolithically integrated optical analog-to-digital conversion system based on the lithium niobate-silicon wafer can be implemented on platforms of most chip manufacturers.

A semiconductor device includes a first insulating layer, an optical modulator, and a multilayer wiring layer. The optical modulator is formed on the first insulating layer. The multilayer wiring layer is formed on the first insulating layer and including a wiring and a resistive element which are spaced apart from each other. The resistive element is formed without overlapping with the optical modulator in plan view. A material of the resistive element is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium.

Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.

Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.

Photonic transmitter, comprising: a stack of a first layer, second layer and third layer stacked on top of one another, a laser source comprising a first waveguide and a second waveguide.

The stack comprises: a fourth layer located on the third layer, the thickness of this fourth layer being comprised between 40 nm and 1 μm in order to obtain adiabatic coupling between the first and second waveguides, and a fifth layer located directly on the fourth layer, the second waveguide being entirely structured in a III-V gain medium of this fifth layer.

The first waveguide comprises a first portion made of semiconductor located inside the third layer and that extends as far as to the interface between the third and fourth layers.