An integrated optical modulator array useful for modulating light at different wavelengths in the same optical band includes multiple GeSi waveguides on a substrate. Each GeSi waveguide has a different width and is coupled to electrodes to form an electro-absorption modulator. A stressor material, such as SiN, disposed between the GeSi waveguides in the optical modulators applies a strain to the GeSi waveguides. Because each GeSi waveguide has a different width, it experiences a different strain. This difference can be a difference in magnitude, type (homogeneous v. inhomogeneous, compressive v. tensile), or both. The different strains shift the bandgaps of the Ge in the GeSi waveguides by different amounts, shifting the optical absorption edges for the GeSi waveguides by different amounts. Put differently, the stressor layer strains each GeSi modulator differently, causing each GeSi modulator to operate at a different wavelength.

The present disclosure provides an array substrate and a method for fabricating the same, and a display apparatus. The array substrate includes: a base substrate, and a shielding pattern and a plurality of detection units on the base substrate. At least one of the plurality of detection units includes a switch transistor and a photosensitive device coupled to the switch transistor. The shielding pattern covers the switch transistor on a side of the switch transistor distal to the base substrate. The photosensitive device is located on a side of the shielding pattern proximal to the base substrate. The shielding pattern is configured to shield irradiation light and allow detection light to be transmitted to the photosensitive device.

Various embodiments of a monolithic electro-optical (E-O) modulator are described. The monolithic E-O modulator includes an active region comprising a plurality of p-n junction diodes, as well as a modulation electrode and a bias electrode that extend through the active region. The monolithic E-O modulator further includes a resistor-capacitor-bias-capacitor (RCBC) electrode structure configured to receive an electrical modulation signal, a direct-current (DC) bias voltage and a power supply voltage. Specifically, the RCBC electrode structure includes a resistor coupled to the modulation electrode and two capacitors each coupled to a respective end of the bias electrode. Beneficially, the RCBC electrode structure enables the p-n junction diodes to be biased independently from a DC level of the electrical modulation signal.

Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include in an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have fingers of p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide. Contacts may be formed on the fingers of p-doped and n-doped regions. The fingers of p-doped and n-doped regions may be arranged symmetrically about the PN junction waveguide or staggered along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 m, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.

An optical modulator includes a substrate, a first dielectric layer over the substrate, a rib waveguide including a PN junction on the first dielectric, a second dielectric layer over the rib waveguide and a stressor layer including a metal, where the first or the second dielectric is between the stressor layer and the PN junction.

Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.

A silicon photonics-based optical modulator is disclosed. The optical modulator includes first radio frequency (RF) metal electrodes that operate as a ground, phase shifters disposed between the first RF metal electrodes for optically modulating an optical signal transmitted along an optical waveguide, second RF metal electrodes disposed between the phase shifters for providing an RF electrical signal received from a driving driver located outside of the optical modulator through one end, resistor-inductors (RL) connected to another end of the second RF metal electrodes, an inductive line disposed between the RLs and a power supply for applying a bias voltage to the optical modulator and the driving driver, and a silicon capacitor disposed between the RLs and the power supply for preventing a degradation of an RF response characteristic of the silicon photonics-based optical modulator caused by the inductive line.

A digital-to-analog converter has a first interface coupled to a second interface through one or more modulation circuits. The circuits include a first coupler connected to the first interface; a first waveguide with a first lead connected to the first coupler, a first end, and a first length running therebetween. The first lead and the first end are coupled by a first switch. The circuits also include: a second coupler connected to the first interface; a second waveguide having a second lead connected to the second coupler, a second end, and a second length running therebetween, the second lead and the second end coupled by a second switch along the second length; and an optical combiner connected to the ends of the waveguides. The second interface is connected to the optical combiner of the modulation circuits. Output from the second interface is an optical signal capable of carrying binary information.

The present invention relates to telecommunication techniques and integrated circuit (IC) devices. More specifically, embodiments of the present invention provide an off-quadrature modulation system. Once an off-quadrature modulation position is determined, a ratio between DC power transfer amplitude and dither tone amplitude for a modulator is as a control loop target to stabilize off-quadrature modulation. DC power transfer amplitude is obtained by measuring and sampling the output of an optical modulator. Dither tone amplitude is obtained by measuring and sampling the modulator output and performing calculation using the optical modulator output values and corresponding dither tone values. There are other embodiments as well.