A display panel and a manufacturing method of a display panel are provided. The display panel includes: a first substrate; a second substrate disposed in parallel and opposite to the first substrate; a liquid crystal layer disposed between the first substrate and the second substrate; a switch assembly formed on the first substrate; a color filter layer formed on the second substrate; a planarization layer disposed on the color filter layer. The planarization layer contains a material of quantum dots.

The present invention relates inter alia to a color display comprising nanoparticles and color filters.

There are provided green-emitting quantum dots (QDs) including I-III-VI type ternary CuGaS core QDs and ZnS multishell wherein Cu:Ga is 1:10 to 1:1, and a fabricating method thereof. Integration of these QDs and red-emitting QDs into a blue LED leads to the fabrication of a white light-emitting device with high color rendering index. There are also provided blue-emitting QDs including I-III-VI type quaternary ZnCuGaS or CuGaAlS core QDs and ZnS multishell, and a fabricating method thereof. An electrically-driven blue light-emitting device with a QD emitting layer including these QDs interposed between a hole transport layer and an electron transport layer is fabricated.

There are provided green-emitting quantum dots (QDs) including I-III-VI type ternary CuGaS core QDs and ZnS multishell wherein Cu:Ga is 1:10 to 1:1, and a fabricating method thereof. Integration of these QDs and red-emitting QDs into a blue LED leads to the fabrication of a white light-emitting device with high color rendering index. There are also provided blue-emitting QDs including I-III-VI type quaternary ZnCuGaS or CuGaAlS core QDs and ZnS multishell, and a fabricating method thereof. An electrically-driven blue light-emitting device with a QD emitting layer including these QDs interposed between a hole transport layer and an electron transport layer is fabricated.

Embodiments relate to a quantum rod, a quantum rod film, a quantum rod display device with a quantum rod. The quantum rod includes a first core, a second core separated from the first core, and a first shell surrounding the first and second cores.

To provide a Mach-Zehnder (MZ) type semiconductor optical modulation element that can be used as a modulator, which is ultrafast and excellent in electrical stability. A semiconductor optical modulation element of a Mach-Zehnder type that performs modulation of light using a refractive index modulation region where a refractive index of the light guided to an optical waveguide is modulated and an input and output region where multiplexing/demultiplexing of the light split in the refractive index modulation region is performed, characterized in that in the refractive index modulation region of the optical waveguide, an n-type clad layer, an i core layer, and a p-type clad layer are stacked in the order from a top layer on a substrate surface equivalent to a (100) plane of a sphalerite-type semi-insulating semiconductor crystal substrate, the n-type clad layer is formed in a ridge shape in an inverted mesa direction, and a capacitance-loaded electrode is provided on the n-type clad layer.

A color conversion panel that includes a color conversion layer including one or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the same. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. The luminescent nanostructures further include fluorine, and in the luminescent nanostructures, a mole ratio of fluorine to indium is greater than or equal to about 0.05:1.

A color conversion panel that includes a color conversion layer including two or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the color conversion panel. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures further include aluminum and chlorine, and a mole ratio of aluminum to sulfur (Al:S) is less than about 0.15:1, a mole ratio of chlorine to sulfur (Cl:S) is less than about 0.1:1, and a mole ratio of sulfur to selenium (S:Se) is greater than or equal to about 2:1. The luminescent nanostructures don not include cadmium.

A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (LED) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least to two thiol (SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.

Since the gate electrode (1) and the capacitor electrode (2) are made into a double layer structure, the first layers (1a, 2a) in contact with the substrate (0) are made of ITO, and the second layers (1b, 2b) in contact with the gate insulating layer (3) are made of an metallic oxide layer, it becomes possible to form the gate electrode (1) and the capacitor electrode (2) having high optical transparency and high conductivity. Therefore, it becomes possible to improve the optical transparency of a thin film transistor and to improve the display performance of an image displaying apparatus for which the thin film transistor is used by using the above-described gate electrode (1) and the above-described capacitor electrode (2).