G03B27/52

EUV focus monitoring systems and methods

Systems and methods for monitoring the focus of an EUV lithography system are disclosed. Another aspect includes a method having operations of measuring a first shift value for a first patterned set of sub-structures of a focus test structure on a wafer and measuring a second shift value for a second patterned set of sub-structures of the test structure on the wafer. The test structure may be formed on the wafer using asymmetric illumination, with the first patterned set of sub-structures having a first pitch and the second patterned set of sub-structures having a second pitch that is different from the first pitch. The method may further include determining a focus shift compensation for an illumination system based on a difference between the first shift value and the second shift value.

Edge exposure apparatus, edge exposure method and non-transitory computer storage medium
09810989 · 2017-11-07 · ·

An edge exposure apparatus includes: an imaging unit that images a front surface of a substrate; a substrate holding unit; an exposure unit that exposes an edge portion of the substrate held on the substrate holding unit; a first moving mechanism that moves and rotates the substrate holding unit; a second moving mechanism that moves the exposure unit; and a control unit that controls the first moving mechanism and the second moving mechanism, wherein the first moving mechanism and the second moving mechanism are controlled so as to acquire array information of shots of a pattern on the substrate from a substrate image of a substrate, which has already been subjected to pattern exposure, imaged by the imaging unit, and expose the edge portion of the substrate, based on the acquired array information.

Measuring method, stage apparatus, and exposure apparatus
09804506 · 2017-10-31 · ·

An exposure apparatus can mitigate the impact of fluctuations in the refractive index of ambient gas, and improve, for example, stage positioning accuracy. An exposure apparatus radiates an exposure illumination light to a wafer on a wafer stage through a projection optical system, and forms a prescribed pattern on the wafer, and comprises: a scale, which is provided to the wafer stage; a plurality of X heads, which detect information related to the position of the scale; a measurement frame that integrally supports the plurality of X heads and has a coefficient of linear thermal expansion that is smaller than that of the main body of the wafer stage (portions excepting a plate wherein the scale is formed); and a control apparatus that derives information related to the displacement of the wafer stage based on the detection results of the plurality of X heads.

Interferometer system, lithography apparatus, and article manufacturing method

Provided is an interferometer system that irradiates an object to be measured with measuring light to thereby measure the position of the object to be measured. The interferometer system includes a laser light source; an interferometer configured to separate laser light emitted from an emission opening of the laser light source into the measuring light and reference light; and an optical path protecting member configured to surround an optical axis such that the laser light passes through the inside thereof and of which one opening is in contact with the emission opening.

Exposure apparatus

The invention provides an exposure apparatus (100) including a formation module (122) which forms charged particle beams with different irradiation positions on a specimen. The formation module (122) includes: a particle source (20) which emits the charged particle beams from an emission region (21) in which a width in a longitudinal direction is different from and a width in a lateral direction orthogonal to the longitudinal direction; an aperture array device (60) provided with openings (62) arranged in an illuminated region (61) in which a width in a longitudinal direction is different from a width in a lateral direction orthogonal to the longitudinal direction; illumination lenses (30, 50) provided between the particle source (20) and the aperture array device (60); and a beam cross-section deformation device (40) which is provided between the particle source (20) and the aperture array device (60), and deforms a cross-sectional shape of the charged particle beams into an anisotropic shape by an action of a magnetic field or an electric field.

Lithographic apparatus and device manufacturing method

In a lithographic apparatus, a localized area of the substrate surface under a projection system is immersed in liquid. The height of a liquid supply system above the surface of the substrate can be varied using actuators. A control system uses feedforward or feedback control with input of the surface height of the substrate to maintain the liquid supply system at a predetermined height above the surface of the substrate.

Arrangement for the thermal actuation of a mirror, in particular in a microlithographic projection exposure apparatus
09798254 · 2017-10-24 · ·

The disclosure provides an arrangement for the thermal actuation of a mirror, in particular in a microlithographic projection exposure apparatus, as well as related methods and systems.

Liquid jet and recovery system for immersion lithography

A liquid immersion lithography apparatus includes a projection system including an optical member of which an incidence side has a convex lens shape, the projection system being configured to project an image through a liquid on a workpiece, and a liquid immersion member arranged below the optical member, the liquid immersion member having a plurality of openings through which the liquid is allowed to flow. A material of which the optical member is made is more resistant to the liquid than a material of which the liquid immersion member is made.

Lithographic apparatus and in-line cleaning apparatus

A lithographic system includes an immersion type lithographic apparatus, which includes a support constructed and arranged to support a substrate, a projection system constructed and arranged to project a patterned beam of radiation onto a target portion of the substrate, a liquid confinement structure configured to at least partially fill a space between the projection system and at least one of the substrate and support with an immersion liquid, a liquid supply system arranged to provide the immersion liquid to the liquid confinement structure, and a cleaning liquid supply system arranged to provide a cleaning liquid to a surface of the lithographic apparatus that comes into contact with the immersion liquid. The system includes a switch to provide the cleaning liquid directly to the liquid confinement structure and to provide the immersion liquid indirectly to the liquid confinement structure via a liquid purification system.

Object holder and lithographic apparatus

An object table to support an object, the object table having a support body, an object holder to hold an object, an opening adjacent an edge of the object holder, and a channel in fluid communication with the opening via a passageway, wherein the channel is defined by a first material which is different to a second material defining the passageway.