An exposure apparatus obtains information on a relationship between a moving amount of a substrate stage in the first direction and an amount of a positional shift in an image of a mask-side reference mark projected on a substrate-side reference mark by a projection optical system in the second direction perpendicular to an optical axis of the projection optical system with respect to the substrate-side reference mark. A controller determines a focus position based on the measurement result by causing the measurement device to measure the light amount while, together with driving the substrate stage in the first direction and the second direction based on the information.

Microlithographic illumination system includes individually drivable elements to variably illuminate a pupil surface of the system. Each element deviates an incident light beam based on a control signal applied to the element. The system also includes an instrument to provide a measurement signal, and a model-based state estimator configured to compute, for each element, an estimated state vector based on the measurement signal. The estimated state vector represents: a deviation of a light beam caused by the element; and a time derivative of the deviation. The illumination system further includes a regulator configured to receive, for each element: a) the estimated state vector; and b) target values for: i) the deviation of the light beam caused by the deviating element; and ii) the time derivative of the deviation.

Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.

Methods and inspection apparatus and computer program products for assessing a quality of reconstruction of a value of a parameter of interest of a structure, which may be applied for example in metrology of microscopic structures. It is important the reconstruction provides a value of a parameter of interest (e.g. a CD) of the structure which is accurate as the reconstructed value is used to monitor and/or control a lithographic process. This is a way of assessing a quality of reconstruction (803) of a value of a parameter of interest of a structure which does not require the use of a scanning electron microscope, by predicting (804) values of the parameter of interest of structures using reconstructed values of parameters of structures, and by comparing (805) the predicted values of the parameter of interest and the reconstructed values of the parameter of interest.

Online calibration of laser performance as a function of the repetition rate at which the laser is operated is disclosed. The calibration can be periodic and carried out during a scheduled during a non-exposure period. Various criteria can be used to automatically select the repetition rates that result in reliable in-spec performance. The reliable values of repetition rates are then made available to the scanner as allowed values and the laser/scanner system is then permitted to use those allowed repetition rates.

A sensor for use in lithographic apparatus of an immersion type and which, in use, comes into contact with the immersion liquid is arranged so that the thermal resistance of a first heat path from a transducer of the sensor to a temperature conditioning device is less than the thermal resistance of a second heat flow path from the transducer to the immersion liquid. Thus, heat flow is preferentially towards the temperature conditioning device and not the immersion liquid so that temperature-induced disturbance in the immersion liquid is reduced or minimized.

A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

A system and method that bends a reticle and senses a curvature of a bent reticle in real-time. The system includes movable reticle stage, reticle vacuum clamps, sensor systems, and reticle bender. The reticle bender comprises piezo actuators. The sensor systems comprises measurement targets and corresponding sensors. The sensors are attached to the movable reticle stage and the measurement targets are attached to the reticle clamps, the reticle bender, or on reticle surfaces. The system is configured to determine a width of the reticle or distance between measurement targets at opposing ends of the reticle, measure a first rotational angle at a first end of the reticle, and measure a second local rotational angle at a second end of the reticle that is opposite to the first end. Based on the width or distance and the first and second angles, a field curvature of the reticle is determined.

A laser device, includes: a laser light generating unit generates laser lights with first and second wavelengths; an amplifying unit amplifies the lights with first and second wavelengths the first and the second amplified lights; a wavelength converting unit that generates a light output, either of first converted light wavelength conversion of the first amplified light and the second amplified light, or of the first converted light and the second converted light wavelength conversion of the second amplified light; and a control unit that controls operation of the laser light generating unit, wherein: the control unit controls an output condition of the light output by adjusting a temporal overlap, of the first converted light and the second amplified light, or the first and second converted lights, through control of relative timings of the laser light with the first and second wavelengths.

A method is described for estimating a spectral feature of a pulsed light beam produced by an optical source and directed toward a wafer of a lithography apparatus. The method includes receiving a set of N optical spectra of pulses of the light beam; saving the received N optical spectra to a saved set; transforming the optical spectra in the saved set to form a set of transformed optical spectra; averaging the transformed optical spectra to form an averaged spectrum; and estimating a spectral feature of the pulsed light beam based on the averaged spectrum.