An object is to provide a mask blank

A mask blank having a substrate and a thin film, the substrate includes two main surfaces and a side surface with a chamfered surface provided between the two main surfaces and the side surface, one main surface of the two main surfaces includes an inner region including a center of the main surface and an outer peripheral region outside of the inner region, the thin film is provided on the inner region of the main surface, the surface reflectance Rs of the outer peripheral region with respect to light of 400 nm to 700 nm wavelength is 10% or less, and provided that Rf is the surface reflectance with respect to light of 400 nm to 700 nm wavelength in one section among sections of the thin film in the range of 9 nm to 10 nm film thickness, the contrast ratio (Rf/Rs) is 3.0 or more.

An object is to provide a mask blank

A mask blank having a substrate and a thin film, the substrate includes two main surfaces and a side surface with a chamfered surface provided between the two main surfaces and the side surface, one main surface of the two main surfaces includes an inner region including a center of the main surface and an outer peripheral region outside of the inner region, the thin film is provided on the inner region of the main surface, the surface reflectance Rs of the outer peripheral region with respect to light of 400 nm to 700 nm wavelength is 10% or less, and provided that Rf is the surface reflectance with respect to light of 400 nm to 700 nm wavelength in one section among sections of the thin film in the range of 9 nm to 10 nm film thickness, the contrast ratio (Rf/Rs) is 3.0 or more.

Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

Disclosed is a photomask comprising: a transparent substrate; and a multi-layer light shielding pattern film disposed on the transparent substrate, wherein the multi-layer light shielding pattern film comprises: a first light shielding film; and a second light shielding film disposed on the first light shielding film and comprising a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a surface roughness Wr of the measuring zone satisfies Equation 1 below:

0 nm<Wr−Wo≤3 nm  [Equation 1] where, in the Equation 1 above, Wo is a surface roughness of the measuring zone before soaking and washing processes, Wr is a surface roughness of the measuring zone after soaking in SC-1 (standard clean-1) solution and washing with ozone water, and the SC-1 solution comprises NH.sub.4OH, H.sub.2O.sub.2, and H.sub.2O.

Disclosed is a photomask comprising: a transparent substrate; and a multi-layer light shielding pattern film disposed on the transparent substrate, wherein the multi-layer light shielding pattern film comprises: a first light shielding film; and a second light shielding film disposed on the first light shielding film and comprising a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a surface roughness Wr of the measuring zone satisfies Equation 1 below:

0 nm<Wr−Wo≤3 nm  [Equation 1] where, in the Equation 1 above, Wo is a surface roughness of the measuring zone before soaking and washing processes, Wr is a surface roughness of the measuring zone after soaking in SC-1 (standard clean-1) solution and washing with ozone water, and the SC-1 solution comprises NH.sub.4OH, H.sub.2O.sub.2, and H.sub.2O.

A photomask blank includes a light-transmitting substrate, and a shading layer part disposed on the light-transmitting substrate, the shading layer part including a first shading layer having a first hardness and a second shading layer having a second hardness. The first shading layer is disposed closer to the light-transmitting substrate than the second shading layer, and a value of the first hardness is larger that a value of the second hardness.

A photomask blank includes a light-transmitting substrate, and a shading layer part disposed on the light-transmitting substrate, the shading layer part including a first shading layer having a first hardness and a second shading layer having a second hardness. The first shading layer is disposed closer to the light-transmitting substrate than the second shading layer, and a value of the first hardness is larger that a value of the second hardness.

Provided is a mask blank including a phase shift film.

The mask blank includes a phase shift film on a main surface of a transparent substrate, the phase shift film contains silicon, oxygen, and nitrogen, a ratio of a nitrogen content [atom %] to a silicon content [atom %] in the phase shift film is 0.20 or more and 0.52 or less, a ratio of an oxygen content [atom %] to a silicon content [atom %] in the phase shift film is 1.16 or more and 1.70 or less, a refractive index n of the phase shift film to a wavelength of an exposure light of an ArF excimer laser is 1.7 or more and 2.0 or less, and an extinction coefficient k is 0.05 or less.

Provided is a mask blank including a phase shift film.

The mask blank includes a phase shift film on a main surface of a transparent substrate, the phase shift film contains silicon, oxygen, and nitrogen, a ratio of a nitrogen content [atom %] to a silicon content [atom %] in the phase shift film is 0.20 or more and 0.52 or less, a ratio of an oxygen content [atom %] to a silicon content [atom %] in the phase shift film is 1.16 or more and 1.70 or less, a refractive index n of the phase shift film to a wavelength of an exposure light of an ArF excimer laser is 1.7 or more and 2.0 or less, and an extinction coefficient k is 0.05 or less.