A halftone phase shift film containing Si and N and/or O is deposited on a transparent substrate by reactive sputtering using a silicon-containing target with a reactive gas. Different powers are applied across a plurality of targets so that two different sputtering modes selected from metal, transition and reaction modes associated with a hysteresis curve are applied to the targets. The phase shift film exhibits satisfactory in-plane uniformity of optical properties.

A halftone phase shift film containing Si and N and/or O is deposited on a transparent substrate by reactive sputtering using a silicon-containing target with a reactive gas. Different powers are applied across a plurality of targets so that two different sputtering modes selected from metal, transition and reaction modes associated with a hysteresis curve are applied to the targets. The phase shift film exhibits satisfactory in-plane uniformity of optical properties.

A mask, including a transparent substrate and mask patterns formed on a surface of the transparent substrate, wherein the mask patterns include a first area for forming film patterns in a display area and a second area for forming film patterns in a non-display area; both the first area and the second area are provided with a plurality of patterned sub-masks; a distribution density of the patterned sub-masks in the first area is less than a distribution density of the patterned sub-masks in the second area; each patterned sub-mask includes a first pattern for forming a source electrode of a transistor, a second pattern for forming a drain electrode of the transistor, and a slit interposed between the first pattern and the second pattern; and a width of the slit in the first area is greater than a width of the slit in the second area.

Provided is a phase shift mask including a substrate, a phase shift layer, and a shielding layer. The phase shift layer is located on the substrate. A pattern of the phase shift layer includes a main pattern and sub-resolution assist features (SRAFs). The SRAFs are disposed around the main pattern. The phase shift layer has a transmission, and the transmission is larger than 6%. The shielding layer at least covers the SRAFs of the phase shift layer.

The present invention discloses a mask, a manufacturing method thereof and a manufacturing method of a thin film transistor. The mask includes: a first substrate and phase shift patterns formed above the first substrate, wherein an opening area is formed between the adjacent phase shift patterns and a halftone pattern is formed at positions corresponding to the phase shift patterns and the opening area. In the present invention, when an active layer pattern, a source and a drain are formed through one patterning process by using the mask, the design of narrow channel of the thin film transistor can be realized. As the width of the channel region of the thin film transistor becomes narrow, the volume of the thin film transistor can be effectively reduced, and the super-miniaturization of the thin film transistor can be achieved.

The present invention discloses a mask, a manufacturing method thereof and a manufacturing method of a thin film transistor. The mask includes: a first substrate and phase shift patterns formed above the first substrate, wherein an opening area is formed between the adjacent phase shift patterns and a halftone pattern is formed at positions corresponding to the phase shift patterns and the opening area. In the present invention, when an active layer pattern, a source and a drain are formed through one patterning process by using the mask, the design of narrow channel of the thin film transistor can be realized. As the width of the channel region of the thin film transistor becomes narrow, the volume of the thin film transistor can be effectively reduced, and the super-miniaturization of the thin film transistor can be achieved.

Provided is a mask blank including an etching stopper film. The mask blank has a structure where an etching stopper film and a thin film for pattern formation are stacked in this order on a transparent substrate, featured in that the thin film includes a material containing silicon, the etching stopper film includes a material containing hafnium, aluminum, and oxygen, and a ratio by atom % of an amount of hafnium to a total amount of hafnium and aluminum in the etching stopper film is 0.86 or less.

Provided is a mask blank including an etching stopper film. The mask blank has a structure where an etching stopper film and a thin film for pattern formation are stacked in this order on a transparent substrate, featured in that the thin film includes a material containing silicon, the etching stopper film includes a material containing hafnium, aluminum, and oxygen, and a ratio by atom % of an amount of hafnium to a total amount of hafnium and aluminum in the etching stopper film is 0.86 or less.

The present invention provides an array substrate and a manufacturing method thereof. The manufacturing method of the array substrate adopts a multi-stage mask to expose and develop, so that a thickness of a remaining photoresist layer in a channel region corresponding to a display region is same as a thickness of a remaining photoresist layer in a channel region corresponding to a GOA region. Therefore, the two channel regions can be completely etched to prevent short-circuiting, and make up for defects of different action efficiency of developers caused by different densities of thin film transistors in the display region and the GOA region.

A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.