Provided is a mask blank for a phase shift mask including an etching stopper film. The mask blank has a structure where a transparent substrate has stacked thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index n.sub.1 of 1.5 or more for light of 193 nm wavelength and an extinction coefficient k.sub.1 of 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index n.sub.2 of 2.5 or more and 3.1 or less for light of 193 nm wavelength and an extinction coefficient k.sub.2 of 0.4 or less for light of 193 nm wavelength, and the refractive index n.sub.2 and the extinction coefficient k.sub.2 satisfy at least one of a set of specified conditions.

Provided is a mask blank for a phase shift mask including an etching stopper film. The mask blank has a structure where a transparent substrate has stacked thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index n.sub.1 of 1.5 or more for light of 193 nm wavelength and an extinction coefficient k.sub.1 of 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index n.sub.2 of 2.5 or more and 3.1 or less for light of 193 nm wavelength and an extinction coefficient k.sub.2 of 0.4 or less for light of 193 nm wavelength, and the refractive index n.sub.2 and the extinction coefficient k.sub.2 satisfy at least one of a set of specified conditions.

Provided is a mask blank for a phase shift mask including an etching stopper film. A mask blank has a structure where a transparent substrate has layered thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index n.sub.1 of 1.5 or more for light of 193 nm wavelength and an extinction coefficient k.sub.1 of 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index n.sub.2 of 2.6 or more for light of 193 nm wavelength and an extinction coefficient k.sub.2 of 0.4 or less for light of 193 nm wavelength, and the refractive index n.sub.2 and the extinction coefficient k.sub.2 satisfy at least one of k.sub.2[(0.188n.sub.2)+0.879] and k.sub.2[(2.75n.sub.2)6.945].

A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.

A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.

The present disclosure provides a mask. The mask includes a substrate; an etch stop layer disposed on the substrate, wherein the etch stop layer includes at least one of ruthenium oxide, tungsten nitride, and titanium nitride and is doped with at least one of phosphorous (P), calcium (Ca), and sodium (Na); and a material layer disposed on the etch stop layer and patterned to have an opening, wherein the etch stop layer completely covers a portion of the substrate within the opening.

The present disclosure provides a mask. The mask includes a substrate; an etch stop layer disposed on the substrate, wherein the etch stop layer includes at least one of ruthenium oxide, tungsten nitride, and titanium nitride and is doped with at least one of phosphorous (P), calcium (Ca), and sodium (Na); and a material layer disposed on the etch stop layer and patterned to have an opening, wherein the etch stop layer completely covers a portion of the substrate within the opening.

A mask blank includes: a light transmitting substrate; a first layer disposed on the light transmitting substrate, and including a chromium compound that contains chromium and at least one element selected from oxygen, nitrogen, and carbon; and a second layer disposed on the first layer as an outermost layer from among the first and second layers, and including a silicon compound that contains silicon and at least one element selected from oxygen, nitrogen, and carbon, an alloy of a transition metal and silicon, or a transition metal and silicon compound that contains a transition metal, silicon, and at least one element selected from oxygen, nitrogen, and carbon. The thickness of the first layer is 45 nm or less, and the thickness of the second layer is 5 nm or greater. An optical density of a stack composed of the first layer and the second layer is 3 or greater.

The present disclosure provides a phase shift mask. The phase shift mask includes a transparent substrate; an etch stop layer disposed on the substrate; and a tunable transparent material layer disposed on the etch stop layer and patterned to have an opening, wherein the tunable transparent material layer is designed to provide phase shift and has a transmittance greater than 90%.

The present disclosure provides a phase shift mask. The phase shift mask includes a transparent substrate; an etch stop layer disposed on the substrate; and a tunable transparent material layer disposed on the etch stop layer and patterned to have an opening, wherein the tunable transparent material layer is designed to provide phase shift and has a transmittance greater than 90%.