The present disclosure provides a photoetching mask plate, a method for manufacturing the photoetching mask plate, and a photoetching method using the photoetching mask plate. The photoetching mask plate includes a base substrate, a mask pattern arranged on a surface of the base substrate, and a conductive connection pattern arranged on the surface of the base substrate. The conductive connection pattern is configured to electrically connect separate portions of the mask pattern to each other.

A substrate with a film for a reflective mask blank and a reflective mask blank, including a substrate, a multilayer reflection film of Mo layers and Si layers, and a Ru protection film is provided. The substrate and blank include a mixing layer containing Mo and Si existing between the Mo layer and Si layer, another mixing layer containing Ru and Si generating between the uppermost Si layer and the Ru protection film, the film and layers have thicknesses satisfying defined expressions.

The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.

The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.

A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.

A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.

In an embodiment, a photomask includes: a substrate over a first conductive layer, the substrate formed of a low thermal expansion material (LTEM); a second conductive layer over the first conductive layer; a reflective film stack over the substrate; a capping layer over the reflective film stack; an absorption layer over the capping layer; and an antireflection (ARC) layer over the absorption layer, where the ARC layer and the absorption layer have a plurality of openings in a first region exposing the capping layer, where the ARC layer, the absorption layer, the capping layer, and the reflective film stack have a trench in a second region exposing the second conductive layer.

A level set algorithm based reverse optical proximity effect correction method for super-resolution lithography. The method comprises: obtaining first mask data according to a target pattern, and constructing a level set function (S11); performing forward simulation, so as to obtain an electric field distribution on a photoresist and a first structural vector electric field distribution on a mask (S12); obtaining a photoresist pattern according to the electric field distribution on the photoresist, and calculating an imaging error between the photoresist pattern and the target pattern (S13); performing accompanying simulation, so as to obtain a second structural vector electric field distribution (S14); obtaining a level set gradient by means of performing calculation according to the first structural vector electric field distribution, the second structural vector electric field distribution and the imaging error (S15); and evolving the level set function by using the level set gradient, performing an update to obtain second mask data, and performing iterative calculation by using the second mask data until mask data meeting a preset condition is obtained, thereby completing reverse optical proximity effect correction (S16). Further provided are a surface plasmon super-resolution lithography method and a reverse optical proximity effect correction system.

A mask blank having a resist layer, which enables charge-up to be suppressed during electron beam irradiation. The mask blank having a resist layer includes a substrate having a thin film, a resist layer formed on a surface of the thin film, and a conductive layer formed on the resist layer. The conductive layer includes a first metal layer containing aluminum as a main component thereof and a second metal layer made of a metal other than aluminum. The first metal layer is formed on the resist layer side of the second metal layer.

A mask blank having a resist layer, which enables charge-up to be suppressed during electron beam irradiation. The mask blank having a resist layer includes a substrate having a thin film, a resist layer formed on a surface of the thin film, and a conductive layer formed on the resist layer. The conductive layer includes a first metal layer containing aluminum as a main component thereof and a second metal layer made of a metal other than aluminum. The first metal layer is formed on the resist layer side of the second metal layer.