A substrate with a film for a reflective mask blank including a substrate, a multilayer reflection film and a back surface conductive film having a composition at the side in contact with the substrate and a different composition at the side remotest from the substrate is provided. The composition at the side in contact with the substrate contains silicon and nitrogen, as main components, and the different composition at the side remotest from the substrate contains tantalum, as a main component, and at least one element selected from the group consisting of silicon, germanium and aluminum.

A photomask includes a transparent substrate and a shielding pattern disposed on the transparent substrate. The shielding pattern includes shielding island structures. The shielding island structures are separated from and spaced apart from one another by dividing lanes. The dividing lanes expose the underlying transparent substrate. The photomask is configured for a light of a wavelength, and the dividing lanes reduce or hinder a transmission of the light of the wavelength.

In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.

A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.

A reflective mask includes a substrate, a light absorbing layer over the substrate, a reflective layer over the light absorbing layer, and an absorption pattern over the reflective layer. The reflective layer covers a first portion of the light absorbing layer, and a second portion of the light absorbing layer is free from coverage by the reflective layer.

This conductive composition includes: a conductive polymer (a) having a sulfonic acid group and/or a carboxy group; a basic compound (b) having at least one nitrogen-containing heterocyclic ring and an amino group; an aqueous polymer (c) having a hydroxyl group (excluding the conductive polymer (a)); a hydrophilic organic solvent (d); and water (e).

This conductive composition includes: a conductive polymer (a) having a sulfonic acid group and/or a carboxy group; a basic compound (b) having at least one nitrogen-containing heterocyclic ring and an amino group; an aqueous polymer (c) having a hydroxyl group (excluding the conductive polymer (a)); a hydrophilic organic solvent (d); and water (e).

Transport complexes and transport modules including the same. The transport complex comprises a metal stick having one surface and other surface that are spaced apart from each other in one direction, a first protection sheet adjacent to the one surface, and a second protection sheet adjacent to the other surface. In wavelength ranges of about 380 nm to about 800 nm, each of the first and second protection sheets has transmittance of about 0% to about 50% and absorptance of less than about 95%.

Transport complexes and transport modules including the same. The transport complex comprises a metal stick having one surface and other surface that are spaced apart from each other in one direction, a first protection sheet adjacent to the one surface, and a second protection sheet adjacent to the other surface. In wavelength ranges of about 380 nm to about 800 nm, each of the first and second protection sheets has transmittance of about 0% to about 50% and absorptance of less than about 95%.

A photomask excellent in durability and exposure efficiency is provided, which is obtained by a simple manufacturing method at a low cost, exhibits sufficient ESD-suppressing effect, causes no destruction of an exposure pattern, and has satisfactory exposure efficiency. The photomask comprises a light-shielding film formed into a pattern for shielding a photoresist film from exposure to light, formed on a surface of a transparent substrate. A coating layer including a thiophene-based conductive resin is formed on the transparent substrate having the light-shielding film formed thereon. The sheet resistance at a surface of the photomask having the coating layer including a thiophene-based conductive resin is smaller than 10.sup.11Ω/□.