A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.

A multi-channel device and method for measuring the distortion and magnification of objective lens. The multi-channel device for measuring the distortion and magnification of objective lens comprises an illumination system, a reticle stage, a test reticle, a projection objective lens, a wafer stage and a multi-channel image plane sensor, wherein the multi-channel image plane sensor simultaneously measures the image placement shifts between actual image points and nominal image points after a plurality of object plane test marks are imaged by the projection objective lens, and calculates the distortion and magnification errors of the objective lens by fitting, which shortens the measurement time, eliminates the influence of wafer stage errors on the measurement accuracy and improves the measurement accuracy.

A multi-channel device and method for measuring the distortion and magnification of objective lens. The multi-channel device for measuring the distortion and magnification of objective lens comprises an illumination system, a reticle stage, a test reticle, a projection objective lens, a wafer stage and a multi-channel image plane sensor, wherein the multi-channel image plane sensor simultaneously measures the image placement shifts between actual image points and nominal image points after a plurality of object plane test marks are imaged by the projection objective lens, and calculates the distortion and magnification errors of the objective lens by fitting, which shortens the measurement time, eliminates the influence of wafer stage errors on the measurement accuracy and improves the measurement accuracy.

The present application provides a mask applied to semiconductor photolithography and a photolithographic method, and the mask includes at least one pattern group, each pattern group including at least one light-transmitting region and at least one shielding region, the light-transmitting regions and the shielding regions being arranged at intervals, and after exposure, each pattern group forming an independent mark on a wafer. The present application has the following advantages. The independent mark formed on the wafer according to the mask has the same shape as a contour of a pattern of the mask, and does not have a pattern defect, which improves accuracy of an independent mark pattern formed on the wafer, and then alignment precision of the semiconductor photolithography as well as overlaying accuracy in a following semiconductor process, thus increasing a quality and a yield of products.

The present application provides a mask applied to semiconductor photolithography and a photolithographic method, and the mask includes at least one pattern group, each pattern group including at least one light-transmitting region and at least one shielding region, the light-transmitting regions and the shielding regions being arranged at intervals, and after exposure, each pattern group forming an independent mark on a wafer. The present application has the following advantages. The independent mark formed on the wafer according to the mask has the same shape as a contour of a pattern of the mask, and does not have a pattern defect, which improves accuracy of an independent mark pattern formed on the wafer, and then alignment precision of the semiconductor photolithography as well as overlaying accuracy in a following semiconductor process, thus increasing a quality and a yield of products.

A mark detection method includes: acquiring on-off information of marks on a photomask to be manufactured; comparing the on-off information with preset on-off information to determine whether the on-off information is consistent with the preset on-off information; and, correcting the on-off information according to the preset on-off information when it is determined that the on-off information is inconsistent with the preset on-off information. The mark detection method and apparatus and the computer-readable storage medium according to the present disclosure can automatically detect whether the on-off of marks is accurate, thereby improving the detection accuracy and reducing labor cost.

A mask layout method includes: forming, on a mask, chip patterns arranged in an array, a scribe line being formed between every two adjacent chip patterns, the scribe line being used to provide mark patterns thereon, the mark patterns comprising at least first mark patterns; acquiring a set number of divided units of the first mark patterns; providing the set number of divided units in sequence on the scribe line so that the first mark patterns do not cover other mark patterns; and providing, on the scribe line, first mark pattern elements to replace at least two adjacent divided units, the first mark pattern elements completely overlapping patterns formed by the at least two adjacent divided units.

The application provides a structure for an alignment measurement mark and a method for an alignment measurement, and includes a first overlay mark and a second overlay mark. The second overlay mark includes a pattern structure to be measured. A layer where the first overlay mark is located is adjacent to a layer where the second overlay mark is located. An orthographic projection of the first overlay mark onto the layer where the second overlay mark is located is located at an inner side of the second overlay mark, or an orthographic projection of the first overlay mark onto the layer where the second overlay mark is located is located at a periphery of the second overlay mark.

The application provides a structure for an alignment measurement mark and a method for an alignment measurement, and includes a first overlay mark and a second overlay mark. The second overlay mark includes a pattern structure to be measured. A layer where the first overlay mark is located is adjacent to a layer where the second overlay mark is located. An orthographic projection of the first overlay mark onto the layer where the second overlay mark is located is located at an inner side of the second overlay mark, or an orthographic projection of the first overlay mark onto the layer where the second overlay mark is located is located at a periphery of the second overlay mark.

A photolithography method is provided. The photolithography method includes forming a photoresist layer on a wafer, exposing a portion of the photoresist layer by using an exposure device and a mask, and forming a photoresist pattern by removing a non-exposed portion of the photoresist layer. The mask includes a substrate having a main pattern area and a blocking area outside the main pattern area, a main pattern on the main pattern area of the substrate, and a blocking pattern on the blocking area of the substrate. An external circumference of the blocking pattern extends to the maximum area of the mask that may be illuminated by the exposure device or to the outside of the maximum area of the mask.