A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.

A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.

A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.

A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.

The present specification provides a compound, a photoresist composition comprising the same, a photoresist pattern comprising the same, and a method for preparing a photoresist pattern.

The present specification provides a compound, a photoresist composition comprising the same, a photoresist pattern comprising the same, and a method for preparing a photoresist pattern.

A semiconductor method is disclosed. The semiconductor method is performed upon semiconductor wafers, wherein each of the semiconductor wafers includes a first exposure field and a second exposure field, and each of the first exposure field and the second exposure field includes a first alignment mark and a second alignment mark. The method includes: determining a first alignment pattern for a first wafer by selecting one of the alignment marks of the first exposure field, and selecting one of the alignment marks of the second exposure field; performing the aligning operation upon the first semiconductor wafer by using the first alignment pattern; determining a second alignment pattern for a second wafer by selecting one of the alignment marks of the first exposure field, and selecting one of the alignment marks of the second exposure field, wherein the first alignment pattern is different from the second alignment pattern.

A semiconductor method is disclosed. The semiconductor method is performed upon semiconductor wafers, wherein each of the semiconductor wafers includes a first exposure field and a second exposure field, and each of the first exposure field and the second exposure field includes a first alignment mark and a second alignment mark. The method includes: determining a first alignment pattern for a first wafer by selecting one of the alignment marks of the first exposure field, and selecting one of the alignment marks of the second exposure field; performing the aligning operation upon the first semiconductor wafer by using the first alignment pattern; determining a second alignment pattern for a second wafer by selecting one of the alignment marks of the first exposure field, and selecting one of the alignment marks of the second exposure field, wherein the first alignment pattern is different from the second alignment pattern.

A display device includes: a display area including a plurality of pixels; a first peripheral area disposed at one side of the display area; and a second peripheral area disposed at the opposite side of the display area, wherein a first column spacer is disposed in the display area, a second column spacer is disposed in the first peripheral area, and a third column spacer is disposed in the second peripheral area. The patterns of an exposure mask utilized in the first peripheral area in which the second column spacer is disposed and the second peripheral area in which the third column spacer is disposed may be different from each other.

A display device includes: a display area including a plurality of pixels; a first peripheral area disposed at one side of the display area; and a second peripheral area disposed at the opposite side of the display area, wherein a first column spacer is disposed in the display area, a second column spacer is disposed in the first peripheral area, and a third column spacer is disposed in the second peripheral area. The patterns of an exposure mask utilized in the first peripheral area in which the second column spacer is disposed and the second peripheral area in which the third column spacer is disposed may be different from each other.