In one embodiment, a mask set for use in fabricating thin film tunneling devices includes a first photomask configured to form bottom electrodes of the devices, the first photomask comprising a first alignment mark including multiple corner markers, and a second photomask configured to form a continuous top layer of the devices, the second photomask comprising a second alignment mark including a corner marker configured to be aligned with one of the corner markers of the first photomask, wherein a degree of overlap between the bottom electrodes and the continuous top layer depends upon the corner marker of the first photomask with which the corner marker of the second photomask aligns.

In one embodiment, a mask set for use in fabricating thin film tunneling devices includes a first photomask configured to form bottom electrodes of the devices, the first photomask comprising a first alignment mark including multiple corner markers, and a second photomask configured to form a continuous top layer of the devices, the second photomask comprising a second alignment mark including a corner marker configured to be aligned with one of the corner markers of the first photomask, wherein a degree of overlap between the bottom electrodes and the continuous top layer depends upon the corner marker of the first photomask with which the corner marker of the second photomask aligns.

The present invention provides a method of aligning a quadrate wafer in a first photolithography process. The method includes: step A: fabricating mask aligning markers in a periphery region of a mask, which is used for a first exposure process of the quadrate wafer, around a mask pattern of the mask; step B: during the first exposure process, positioning the quadrate wafer in a preset region by using the mask aligning markers on the mask, and exposing the quadrate wafer through the mask; and step C: performing alignment for the quadrate wafer during a second exposure process and subsequent exposure processes by using aligning markers on the quadrate wafer that are obtained during the first exposure process. The method may be easily and reliably performed to ensure intact dies at periphery of a quadrate wafer to be produced and thus render increased yield of chips.

The present invention provides a method of aligning a quadrate wafer in a first photolithography process. The method includes: step A: fabricating mask aligning markers in a periphery region of a mask, which is used for a first exposure process of the quadrate wafer, around a mask pattern of the mask; step B: during the first exposure process, positioning the quadrate wafer in a preset region by using the mask aligning markers on the mask, and exposing the quadrate wafer through the mask; and step C: performing alignment for the quadrate wafer during a second exposure process and subsequent exposure processes by using aligning markers on the quadrate wafer that are obtained during the first exposure process. The method may be easily and reliably performed to ensure intact dies at periphery of a quadrate wafer to be produced and thus render increased yield of chips.

A film resist is a member for being bonded to a main surface of a substrate, which main surface is provided with a mark. The film resist includes a cutout for the mark to be checked.

A lithography apparatus includes a formation unit that forms an alignment mark on a substrate by irradiating the substrate that includes a photosensitizer with light, and a transfer unit that aligns the substrate on the basis of the position of the alignment mark and that transfers a pattern to the substrate by illuminating the photosensitizer with exposure light. The formation unit irradiates a material of a grounding of the photosensitizer with irradiation light at a wavelength that differs from that of the exposure light and forms the alignment mark on the material by processing the material with energy of the irradiation light.

A lithography apparatus includes a formation unit that forms an alignment mark on a substrate by irradiating the substrate that includes a photosensitizer with light, and a transfer unit that aligns the substrate on the basis of the position of the alignment mark and that transfers a pattern to the substrate by illuminating the photosensitizer with exposure light. The formation unit irradiates a material of a grounding of the photosensitizer with irradiation light at a wavelength that differs from that of the exposure light and forms the alignment mark on the material by processing the material with energy of the irradiation light.

A measurement system used in a manufacturing line for micro-devices includes: a plurality of measurement devices in which each device performs measurement processing on a substrate; and a carrying system to perform delivery of a substrate with the plurality of measurement devices. The plurality of measurement devices includes a first measurement device that acquires position information on a plurality of marks formed on a substrate, and a second measurement device that acquires position information on a plurality of marks formed on a substrate. Position information on a plurality of marks formed on a substrate can be acquired under a setting of a first predetermined condition in the first measurement device, and position information on a plurality of marks formed on another substrate can be acquired under a setting of a second predetermined condition different from the first predetermined condition in the second measurement device.

A measurement system used in a manufacturing line for micro-devices includes: a plurality of measurement devices in which each device performs measurement processing on a substrate; and a carrying system to perform delivery of a substrate with the plurality of measurement devices. The plurality of measurement devices includes a first measurement device that acquires position information on a plurality of marks formed on a substrate, and a second measurement device that acquires position information on a plurality of marks formed on a substrate. Position information on a plurality of marks formed on a substrate can be acquired under a setting of a first predetermined condition in the first measurement device, and position information on a plurality of marks formed on another substrate can be acquired under a setting of a second predetermined condition different from the first predetermined condition in the second measurement device.

A template of one embodiment includes an alignment mark. The alignment mark includes a first main pattern and a first auxiliary pattern. In the first main pattern, a first part and a second part are disposed according to a predetermined repeating pattern. The first auxiliary pattern is configured as a pattern opposite to the repeating pattern in a region outside an end of the first main pattern.