Disclosed is a substrate treating apparatus including a support unit that supports and rotates a substrate, a heating unit including a laser irradiator that irradiates laser light in a pattern formed in the substrate, a movement module that changes a location of the laser irradiator by moving the heating unit, and a controller that controls the support unit and the heating unit, the movement module moves the heating unit between a heating location, at which the laser light is irradiated to the substrate, and a standby location that deviates from the substrate, and the movement module rotates and linearly moves the heating unit.

A method may include forming a first grating and a second grating, disposed in a region of vertical overlap of the first and second gratings on different levels, respectively, having substantially the same pitch, and inclined with respect to each other, such that a bias value between the first and second gratings is changed along a length direction of the first and second gratings, using a lithography process. A method may include emitting a beam to the first and second gratings; and obtaining trend information associated with a diffracted beam from an image pattern of a beam from the first and second gratings, using the emitted beam, in which the trend information may concern changes in the intensity of the diffracted beam according to the bias value. An overlay error in at least one grating may be determined based on the trend information and an intensity of a diffracted beam.

A method may include forming a first grating and a second grating, disposed in a region of vertical overlap of the first and second gratings on different levels, respectively, having substantially the same pitch, and inclined with respect to each other, such that a bias value between the first and second gratings is changed along a length direction of the first and second gratings, using a lithography process. A method may include emitting a beam to the first and second gratings; and obtaining trend information associated with a diffracted beam from an image pattern of a beam from the first and second gratings, using the emitted beam, in which the trend information may concern changes in the intensity of the diffracted beam according to the bias value. An overlay error in at least one grating may be determined based on the trend information and an intensity of a diffracted beam.

A method for improving a design of a patterning device. The method includes (i) obtaining mask points of a design of a mask feature, wherein the mask feature corresponds to a target feature in a target pattern to be printed on a substrate; and (ii) adjusting locations of the mask points to generate a modified design of the mask feature based on the adjusted mask points.

A method for improving a design of a patterning device. The method includes (i) obtaining mask points of a design of a mask feature, wherein the mask feature corresponds to a target feature in a target pattern to be printed on a substrate; and (ii) adjusting locations of the mask points to generate a modified design of the mask feature based on the adjusted mask points.

The inventive concept provides a mask treating apparatus. The mask treating apparatus includes a support unit configured to support and rotate a mask, the mask having a first pattern within a plurality of cells thereof and a second pattern outside regions of the plurality of cells; a heating unit including a laser irradiation module and a moving module, the laser irradiation module having a laser irradiator for irradiating a laser light to the second pattern, the moving module configured to change a position of the laser irradiation module; and a controller configured to control the support unit and the heating unit, and wherein when a treating position is divided into four equal parts from a first quadrant to a fourth quadrant based on a center of the mask, the laser irradiator is positioned at the fourth quadrant and the first quadrant in a direction linearly moving from a standby position to the treating position, positioned at the third quadrant in a direction which is perpendicular to the fourth quadrant, and positioned at the second quadrant in a direction which is perpendicular to the first quadrant, and wherein the controller controls a rotation of the support unit so the second pattern is positioned at the fourth quadrant.

In various embodiments, an exposure mask may include a carrier, a first exposure structure in a first structure plane of the carrier, and a second exposure structure in a second structure plane of the carrier. The two structure planes differ from one another.

A method of making a semiconductor device includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern.

Implementations of the disclosure provide methods for generating an in-die reference for die-to-die defect detection techniques. The inspection methods using in-die reference comprise finding similar blocks of a lithographic mask, the similar blocks are defined by similar CAD information. A comparison distance is selected based on (i) areas of the similar blocks and (ii) spatial relationships between the similar blocks. The similar blocks are aggregated, based on the comparison distance, to provide multiple aggregated areas; and comparable regions of the lithographic mask are defined based on the multiple aggregate blocks. Images of at least some of the comparable regions of the lithographic mask are acquired using an inspection module. The acquired images are compared.

Implementations of the disclosure provide methods for generating an in-die reference for die-to-die defect detection techniques. The inspection methods using in-die reference comprise finding similar blocks of a lithographic mask, the similar blocks are defined by similar CAD information. A comparison distance is selected based on (i) areas of the similar blocks and (ii) spatial relationships between the similar blocks. The similar blocks are aggregated, based on the comparison distance, to provide multiple aggregated areas; and comparable regions of the lithographic mask are defined based on the multiple aggregate blocks. Images of at least some of the comparable regions of the lithographic mask are acquired using an inspection module. The acquired images are compared.