The present disclosure provides masks suitable for Extreme Ultraviolet (EUV) and X-ray lithography by including a non-reflective region within the reflective multilayer. This non-reflective region replaces a typical absorber layer used to provide the pattern for integrated circuits. New classes of materials and associated components for use in devices and systems operating at ultraviolet (UV), extreme ultraviolet (EUV), and/or soft X-ray wavelengths are described. This disclosure relates to an EUV Photomask Architecture comprising of reflective and non reflective regions eliminating the need for an absorber layer, the effects of shadows on masks, 3D diffraction effects, and defect management. Such a material structure and combination may be used to make components such as mirrors, lenses or other optics, panels, lightsources, photomasks, photoresists, or other components for use in applications such as lithography, wafer patterning, astronomical and space applications, biomedical applications, or other applications.

The present application discloses a photomask and an exposure system, the photomask comprising a completely transparent region and a completely shading region disposed around the periphery of the completely transparent region, and a shading region is disposed in the completely transparent region, and a light transmittance of the shading region is defined as T, 0T<100%.

A method is provided for forming an interconnect structure for an integrated circuit. The method includes: forming a metal layer over a substrate; forming a hard mask layer over the metal layer; forming a first resist layer of a first resist material over the hard mask layer and patterning the first resist layer in a first lithography process to define a first resist pattern; forming over the first resist pattern a second resist layer of a second resist material different from the first resist material and patterning the second resist layer in a second lithography process to define a second resist pattern of resist lines extending in parallel along a first direction, wherein at least a portion of the first resist pattern is overlapped by the second resist pattern; patterning the hard mask layer using the second resist pattern as an etch mask to define a hard mask line pattern underneath the second resist pattern, and subsequently the metal layer to define a metal line pattern underneath the hard mask line pattern; removing the second resist pattern and subsequently patterning the hard mask line pattern using said at least a portion of the first resist pattern as an etch mask to define a hard mask pillar pattern over the metal line pattern; and forming a metal pillar pattern in accordance with the hard mask pillar pattern.

A method is provided for forming an interconnect structure for an integrated circuit. The method includes: forming a metal layer over a substrate; forming a hard mask layer over the metal layer; forming a first resist layer of a first resist material over the hard mask layer and patterning the first resist layer in a first lithography process to define a first resist pattern; forming over the first resist pattern a second resist layer of a second resist material different from the first resist material and patterning the second resist layer in a second lithography process to define a second resist pattern of resist lines extending in parallel along a first direction, wherein at least a portion of the first resist pattern is overlapped by the second resist pattern; patterning the hard mask layer using the second resist pattern as an etch mask to define a hard mask line pattern underneath the second resist pattern, and subsequently the metal layer to define a metal line pattern underneath the hard mask line pattern; removing the second resist pattern and subsequently patterning the hard mask line pattern using said at least a portion of the first resist pattern as an etch mask to define a hard mask pillar pattern over the metal line pattern; and forming a metal pillar pattern in accordance with the hard mask pillar pattern.

According to an embodiment, a template is provided which includes a template substrate, and a device formation pattern and an alignment mark provided on a common surface of the template substrate. The alignment mark includes a refraction layer provided at a bottom of a first concave pattern provided on the template substrate, and an insulating layer filling the first concave pattern provided with the refraction layer.

According to an embodiment, a template is provided which includes a template substrate, and a device formation pattern and an alignment mark provided on a common surface of the template substrate. The alignment mark includes a refraction layer provided at a bottom of a first concave pattern provided on the template substrate, and an insulating layer filling the first concave pattern provided with the refraction layer.

A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.

The inventive concept provides a substrate treating method. The substrate treating apparatus includes first treating including supplying a first liquid to a rotating substrate; and second treating including supplying a second liquid to the rotating substrate after the supplying of the first liquid, and wherein a rotation speed of a substrate is changed during the supplying of the first liquid to the rotating substrate.

The inventive concept provides a substrate treating method. The substrate treating apparatus includes first treating including supplying a first liquid to a rotating substrate; and second treating including supplying a second liquid to the rotating substrate after the supplying of the first liquid, and wherein a rotation speed of a substrate is changed during the supplying of the first liquid to the rotating substrate.

A lithography method is described. The method includes forming a resist layer over a substrate, performing a treatment on the resist layer to form an upper portion of the resist layer having a first molecular weight and a lower portion of the resist layer having a second molecular weight less than the first molecular weight, performing an exposure process on the resist layer, and performing a developing process on the resist layer to form a patterned resist layer.