A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.

Disclosed are pellicles for use in extreme ultraviolet (EUV) lithography, the pellicles comprising silicon carbide nanostructures, and exhibiting high transmittance of EUV exposure light and high mechanical strength, as well as methods of using these pellicles.

Disclosed are pellicles for use in extreme ultraviolet (EUV) lithography, the pellicles comprising silicon carbide nanostructures, and exhibiting high transmittance of EUV exposure light and high mechanical strength, as well as methods of using these pellicles.

The present invention is to provide a pellicle frame in a frame shape, having an upper end face to arrange a pellicle film thereon and a lower end face to face a photomask, and which is characterized by being provided with a notched part from an outer side face toward an inner side face of the upper end face; and to provide a pellicle characterized by including the pellicle frame as a component.

The present invention is to provide a pellicle frame in a frame shape, having an upper end face to arrange a pellicle film thereon and a lower end face to face a photomask, and which is characterized by being provided with a notched part from an outer side face toward an inner side face of the upper end face; and to provide a pellicle characterized by including the pellicle frame as a component.

An optical element for a lithographic apparatus, the optical element including an anchor layer selected to support a top layer having self-terminating growth in an operating lithographic apparatus or plasma containing environment. Also described is a method of manufacturing an optical element, the method including depositing a top layer on anchor layer via exposure to plasma, preferably electromagnetically induced plasma. Lithographic apparatuses including such optical elements are also described.

An optical element for a lithographic apparatus, the optical element including an anchor layer selected to support a top layer having self-terminating growth in an operating lithographic apparatus or plasma containing environment. Also described is a method of manufacturing an optical element, the method including depositing a top layer on anchor layer via exposure to plasma, preferably electromagnetically induced plasma. Lithographic apparatuses including such optical elements are also described.

A mask frame assembly for an electronic display device includes a frame, and a mask coupled to the frame, in which the mask includes a pattern hole defining a first area over which material may be deposited, and a dam surrounding the pattern hole and defining a second area smaller than the first area over which the material may be deposited. A method of manufacturing a mask frame assembly for an electronic display device is also disclosed.

The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 μm and about 500 μm. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (T.sub.g) greater than room temperature.

The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 μm and about 500 μm. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (T.sub.g) greater than room temperature.