A pellicle characterized by having an amount of released aqueous gas of 1×10.sup.−3 Pa.Math.L/s or less per pellicle, an amount of released hydrocarbon-based gas of 1×10.sup.−5 Pa.Math.L/s or less per pellicle in a range of measured mass number of 45 to 100 amu, and an amount of released hydrocarbon-based gas of 4×10.sup.−7 Pa.Math.L/s or less per pellicle in a range of measured mass number of 101 to 200 amu, under vacuum after the pellicle has been left to stand for 10 minutes in an atmosphere of 23° C. and 1×10.sup.−3 Pa or less.

A pellicle characterized by having an amount of released aqueous gas of 1×10.sup.−3 Pa.Math.L/s or less per pellicle, an amount of released hydrocarbon-based gas of 1×10.sup.−5 Pa.Math.L/s or less per pellicle in a range of measured mass number of 45 to 100 amu, and an amount of released hydrocarbon-based gas of 4×10.sup.−7 Pa.Math.L/s or less per pellicle in a range of measured mass number of 101 to 200 amu, under vacuum after the pellicle has been left to stand for 10 minutes in an atmosphere of 23° C. and 1×10.sup.−3 Pa or less.

A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

A method of manufacturing a membrane assembly for EUV lithography, wherein a layer which forms at least part of a pellicle membrane is provided after one or more etching steps which define a pellicle border holding the pellicle membrane. Also provided is a pellicle substrate, the substrate including: a stack having a front face and back face, wherein one or more layers on the back face of the stack have been selectively removed to define a pellicle border region for holding the pellicle membrane before the layer which forms at least part of a pellicle membrane has been provided.

A method of manufacturing a membrane assembly for EUV lithography, wherein a layer which forms at least part of a pellicle membrane is provided after one or more etching steps which define a pellicle border holding the pellicle membrane. Also provided is a pellicle substrate, the substrate including: a stack having a front face and back face, wherein one or more layers on the back face of the stack have been selectively removed to define a pellicle border region for holding the pellicle membrane before the layer which forms at least part of a pellicle membrane has been provided.

A pellicle is contaminated with dust or the like for various reasons during the production thereof. Especially, there is a problem that the risk that the dust or the like is attached is high during trimming or various other processes performed on a pellicle film. The present invention provides a method for producing a pellicle for EUV that decreases the attachment of dust or the like. A method for producing a pellicle includes forming a pellicle film on a substrate; trimming the substrate; and removing at least a part of the substrate after trimming the substrate. Before the part of the substrate is removed, at least particles attached to a surface of the pellicle film are removed.

A pellicle is contaminated with dust or the like for various reasons during the production thereof. Especially, there is a problem that the risk that the dust or the like is attached is high during trimming or various other processes performed on a pellicle film. The present invention provides a method for producing a pellicle for EUV that decreases the attachment of dust or the like. A method for producing a pellicle includes forming a pellicle film on a substrate; trimming the substrate; and removing at least a part of the substrate after trimming the substrate. Before the part of the substrate is removed, at least particles attached to a surface of the pellicle film are removed.

Provided is a supporting frame in which a vent hole detachably arranging a filter and to which a pellicle film for extreme ultraviolet lithography can be attached. A support frame according to an embodiment of the present invention is a support frame for arranging a pellicle film, the support frame has a through hole being made from a hole extending along a first direction, the first direction being almost parallel to a surface direction of the pellicle film, and a hole extending along a second direction, the second direction not being parallel to the first direction; and the support frame includes a filter, the filter arranged at an inside of the through hole or at an end of the through hole, and the filter is arranged apart from the pellicle film.

Provided is a supporting frame in which a vent hole detachably arranging a filter and to which a pellicle film for extreme ultraviolet lithography can be attached. A support frame according to an embodiment of the present invention is a support frame for arranging a pellicle film, the support frame has a through hole being made from a hole extending along a first direction, the first direction being almost parallel to a surface direction of the pellicle film, and a hole extending along a second direction, the second direction not being parallel to the first direction; and the support frame includes a filter, the filter arranged at an inside of the through hole or at an end of the through hole, and the filter is arranged apart from the pellicle film.