A lithography patterning system includes a reticle having patterned features, a pellicle having a plurality of openings, a radiation source configured for emitting radiation to reflect and/or project the patterned features, and one or more mirrors configured for guiding reflected and/or projected patterned features onto a wafer. The pellicle is configured to protect the reticle against particles and floating contaminants. The plurality of openings include between 5% and 99.9% of lateral surface area of the pellicle. The pellicle can be attached to the reticle on a side of the patterned features, placed beside an optical path between the radiation source and the wafer, or placed in an optical path between mirrors and the radiation source. The plurality of openings in the pellicle are formed by a plurality of bar shaped materials, or formed in a honey comb structure or a mesh structure.

A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.

A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.

A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.

The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 10×10.sup.−6 (1/K) or less and further a density of 4.6 g/cm.sup.3 or less, and a pellicle characterized by including the pellicle frame as an element.

The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 10×10.sup.−6 (1/K) or less and further a density of 4.6 g/cm.sup.3 or less, and a pellicle characterized by including the pellicle frame as an element.

A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.

A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.

A method for protecting a photomask comprises: (i) providing the photomask, (ii) providing a border, (iii) depositing at least two electrical contacts on the border, (iv) mounting a film comprising carbon nanotubes on the border such that the film comprises a free-standing part, wherein after the mounting and depositing steps, the electrical contacts are in contact with the film, (v) inducing a current through the free-standing part of the film by biasing at least one pair of the electrical contacts, and (vi) mounting the border on at least one side of the photomask with the free-standing part of the film above the photomask.

A method for protecting a photomask comprises: (i) providing the photomask, (ii) providing a border, (iii) depositing at least two electrical contacts on the border, (iv) mounting a film comprising carbon nanotubes on the border such that the film comprises a free-standing part, wherein after the mounting and depositing steps, the electrical contacts are in contact with the film, (v) inducing a current through the free-standing part of the film by biasing at least one pair of the electrical contacts, and (vi) mounting the border on at least one side of the photomask with the free-standing part of the film above the photomask.