A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.

A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.

A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.

A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may include a metal nitride layer.

A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may include a metal nitride layer.

The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.

The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.

A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.

A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.