A reticle structure includes a reticle having patterned features and a first border section enclosing the patterned features. The reticle structure includes a membrane having a middle section a second border section enclosing the middle section. The reticle structure includes a frame disposed between the membrane and the reticle to mount the membrane over the patterned features of the reticle. The frame creates an enclosure between the reticle and the membrane and encircles the patterned features of the reticle. The frame includes a plurality of holes and the plurality of holes produces a threshold percentage of opening in the frame to maintain an equalized pressure difference between the enclosure and outside the enclosure below a threshold pressure.

A reticle structure includes a reticle having patterned features and a first border section enclosing the patterned features. The reticle structure includes a membrane having a middle section a second border section enclosing the middle section. The reticle structure includes a frame disposed between the membrane and the reticle to mount the membrane over the patterned features of the reticle. The frame creates an enclosure between the reticle and the membrane and encircles the patterned features of the reticle. The frame includes a plurality of holes and the plurality of holes produces a threshold percentage of opening in the frame to maintain an equalized pressure difference between the enclosure and outside the enclosure below a threshold pressure.

An adhesive for a pellicle, the adhesive including a phenol compound, the phenol compound having at least two hydroxyl groups, a polymer having a hydroxyl group or an amine group, and water.

An adhesive for a pellicle, the adhesive including a phenol compound, the phenol compound having at least two hydroxyl groups, a polymer having a hydroxyl group or an amine group, and water.

The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 10×10.sup.−6 (1/K) or less and further a density of 4.6 g/cm.sup.3 or less, and a pellicle characterized by including the pellicle frame as an element.

The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 10×10.sup.−6 (1/K) or less and further a density of 4.6 g/cm.sup.3 or less, and a pellicle characterized by including the pellicle frame as an element.

A membrane assembly for EUV lithography, the membrane assembly including: a planar membrane; a border configured to hold the membrane; and a frame assembly connected to the border and configured to attach to a patterning device for EUV lithography, wherein the frame assembly is connected to the border in a direction perpendicular to the plane of the membrane such that in use the frame assembly is between the border and the patterning device.

A membrane assembly for EUV lithography, the membrane assembly including: a planar membrane; a border configured to hold the membrane; and a frame assembly connected to the border and configured to attach to a patterning device for EUV lithography, wherein the frame assembly is connected to the border in a direction perpendicular to the plane of the membrane such that in use the frame assembly is between the border and the patterning device.

Provided are a pellicle film, a pellicle frame and a pellicle having a higher EUV transmittance. An exposure pattern plate capable of performing EUV lithography with the pellicle film, the pellicle frame or the pellicle, and a method for producing a semiconductor device, are provided. A pellicle film for exposure extendable over an opening of a support frame and having a thickness of 200 nm or less is provided. The film includes a carbon nanotube sheet. The carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes, the bundles each have a diameter of 100 nm or shorter, and the bundles are aligned in a planar direction in the carbon nanotube sheet.

Provided are a pellicle film, a pellicle frame and a pellicle having a higher EUV transmittance. An exposure pattern plate capable of performing EUV lithography with the pellicle film, the pellicle frame or the pellicle, and a method for producing a semiconductor device, are provided. A pellicle film for exposure extendable over an opening of a support frame and having a thickness of 200 nm or less is provided. The film includes a carbon nanotube sheet. The carbon nanotube sheet includes bundles each including a plurality of carbon nanotubes, the bundles each have a diameter of 100 nm or shorter, and the bundles are aligned in a planar direction in the carbon nanotube sheet.