An apparatus for removing a pellicle frame from a photomask includes a shower head and a gripper. The shower head is configured to provide an air curtain between the pellicle frame and a patterned area of the photomask. The gripper is configured to secure the pellicle frame from a direction against the flow blown from the air curtain. The flow is substantially directed toward a periphery of the photomask. A method of removing a pellicle frame from a photomask includes providing an air curtain between the pellicle frame and a patterned area of the photomask, and generating a temperature difference between the photomask and the pellicle frame. The flow of the air curtain is substantially directed toward a periphery of the photomask. The temperature of the photomask is higher than the temperature of the pellicle frame.

To provide a pellicle in which outgas from an adhesive layer is suppressed. The pellicle includes a pellicle film, a support frame for supporting the pellicle film, a protrusion part arranged in the support frame, a first adhesive layer arranged on the protrusion part; and an inorganic material layer arranged at a position closer to the pellicle film than the first adhesive layer. The inorganic material layer may include a first inorganic material layer arranged at a first side surface of the first adhesive layer, the first side surface of the first adhesive layer intersecting the pellicle film, and arranged at a position closer to the pellicle film.

To provide a pellicle in which outgas from an adhesive layer is suppressed. The pellicle includes a pellicle film, a support frame for supporting the pellicle film, a protrusion part arranged in the support frame, a first adhesive layer arranged on the protrusion part; and an inorganic material layer arranged at a position closer to the pellicle film than the first adhesive layer. The inorganic material layer may include a first inorganic material layer arranged at a first side surface of the first adhesive layer, the first side surface of the first adhesive layer intersecting the pellicle film, and arranged at a position closer to the pellicle film.

The present disclosure relates to a pellicle that can achieve both a high EUV transmittance and a uniformity in EUV transmittance by including a graphite thin film having a film thickness of 5 nm or more and 30 nm or less and a surface roughness (Sa) of 0.1 nm or more and 500 nm or less.

The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 1010.sup.6 (1/K) or less and further a density of 4.6 g/cm.sup.3 or less, and a pellicle characterized by including the pellicle frame as an element.

The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 1010.sup.6 (1/K) or less and further a density of 4.6 g/cm.sup.3 or less, and a pellicle characterized by including the pellicle frame as an element.

Disclosed is a pellicle for extreme ultraviolet (EUV) lithography. The pellicle may include: a support layer pattern which is formed by etching a support layer; a pellicle layer which is formed on the support layer pattern; and an etching stop layer pattern which is formed between the support layer pattern and the pellicle layer and formed by etching an etching stop layer of stopping etching when the support layer is etched. Thus, there is provided a pellicle for EUV photomask, which maintains high transmittance with the minimum thickness for EUV exposure light, and is excellent in mechanical strength and thermal characteristics.

Disclosed is a pellicle for extreme ultraviolet (EUV) lithography. The pellicle may include: a support layer pattern which is formed by etching a support layer; a pellicle layer which is formed on the support layer pattern; and an etching stop layer pattern which is formed between the support layer pattern and the pellicle layer and formed by etching an etching stop layer of stopping etching when the support layer is etched. Thus, there is provided a pellicle for EUV photomask, which maintains high transmittance with the minimum thickness for EUV exposure light, and is excellent in mechanical strength and thermal characteristics.

A method for fabricating a pellicle assembly for a lithography process includes providing a carrier. A membrane layer is fabricated over the carrier. A pellicle frame is attached to the membrane layer. The carrier is then separated from the membrane layer using a release treatment process.

A method for fabricating a pellicle assembly for a lithography process includes providing a carrier. A membrane layer is fabricated over the carrier. A pellicle frame is attached to the membrane layer. The carrier is then separated from the membrane layer using a release treatment process.